arXiv subjects

Chaoshen Zhang

Publications and source records attributed to Chaoshen Zhang.

5 recordsLinked to original sources

arXiv2026

Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides

The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluctuating charge environment, limiting photon indistinguishability for quantum networking. Here, we address this challenge through characterization and suppression of the local charge-noise of single T-centers in lateral p-i-n waveguides, demonstrating an unheralded method of T-center optical linewidth narrowing. Above-band illumination resets the charge environment, neutralizing the local field and suppressing spectral diffusion. Across 46 emitters this reset narrows the median linewidth 3.5-fold to 0.57(11) GHz, and an optimized emitter reaches 128(22) MHz, the narrowest unheralded linewidth reported for an integrated T-center. The narrowed transition supports coherent optical Rabi oscillations with a coherence time of 20(2) ns. Finally, we perform Stark-shift tuning using the p-i-n junction, and read out the local electric field and the charge-noise width at 15 mK. An analytical model of proximal surfaces, bulk, and junction field effects provides good agreement with our findings. Our multi-pronged characterization of the nanophotonic-integrated T-center charge environment enables future device optimization toward scalable quantum interconnects.

quant-ph↗

arXiv2026

Ultracoherent self-assembled diamond nanomechanics reveals superfluid dynamics

From gravitational-wave detection, protein force microscopy, to exploration of quantum-classical boundaries, many anticipated discoveries in fundamental science require improving measurement sensitivity limits. Through the fluctuation-dissipation theorem, mechanical dissipation sets the acoustic noise for this limit. Yet, even in high-purity crystals, the microscopic mechanisms responsible for the acoustic loss remain poorly understood. Tension-induced dissipation dilution offers a route to ultralow acoustic loss, but is challenging to implement in crystalline materials including single-crystal diamond. Here we realize a strain-engineered diamond nanomechanical platform using a liquid-assisted van der Waals self-assembly process that harnesses intrinsic surface forces to apply tensile stress exceeding 1 GPa. At cryogenic temperatures these resonators achieve quality factors beyond 10 billion (intrinsic material quality factors beyond 100 million). This exceptional coherence turns them into a sensitive probe for residual dissipation, elucidating three distinct two-level-system channels and one topological dissipation channel from a surface superfluid helium film. Our work shows how advancing mechanical coherence opens access to new regimes of physics in hybrid quantum systems, precision metrology, and condensed-matter physics.

cond-mat.mes-hall↗

arXiv2026

Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication

Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features.

cond-mat.mtrl-sci↗

arXiv2026

Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble

Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, conventionally limited to coarse macroscopic methods which fail to capture subtle effects in the material. Here, through transient optical spectroscopy on an embedded T center ensemble, we realize the in-situ observation of a silicon PIN-diode phase transition to a regime of self-sustained carrier oscillatory dynamics characteristic of negative differential resistance. Manifest in both the ensemble electroluminescence and photoluminescence, we find a temperature and field-dependent phase space for persistent undamped amplitude oscillations indicative of a collective ensemble response to the field dynamics. These findings shed new light on the cryogenic behavior of silicon, provide fundamental insight into the physics of the T center for improved quantum device performance, and open a promising new direction for defect-based local quantum sensing in semiconductor devices.

quant-ph↗

arXiv2025

A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices

4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into suspended nanodevices enhances defect control and readout--key advances needed to fully harness their potential. However, challenges in developing robust fabrication processes for 4H-SiC thin films--due to the material's chemical and mechanical stability--limit their implementation in quantum applications. Here, we report on a new fabrication approach that first synthesizes suspended thin films from a monolithic platform, then patterns devices. With this technique, we fabricate and characterize structures tailored for defect integration, demonstrating 1D photonic crystal cavities, with and without waveguide interfaces, and lithium niobate on 4H-SiC acoustic cavities. This approach allows for greater fabrication flexibility--supporting high temperature annealing and heterogeneous material platform compatibility--providing a versatile platform for scalable fabrication of 4H-SiC devices for quantum technologies.

physics.app-ph↗