arXiv subjects

Chaoyuan Jin

Publications and source records attributed to Chaoyuan Jin.

8 recordsLinked to original sources

arXiv2026

Structured Single-photon Metasource

Structured quantum light is crucial for high-dimensional quantum information processing, yet its direct generation from quantum emitters remains challenging due to their intrinsic locality and omnidirectional radiation. Metasurfaces have been adopted for quantum-light wavefront shaping, typically in cascaded or stacked configurations that suffer from low efficiency and limited resolution. Here, we demonstrate a semiconductor metasource that directly embodies single quantum dots in a nonlocal GaAs metasurface. Spontaneous emission from quantum dot is efficiently funneled into an extended quasi-bound-state-in-the-continuum mode while sustaining strong mode-emitter overlap. A lateral core-barrier heterostructure tunes mode volume and spatial distribution to balance Purcell enhancement and holographic resolution. Using spatially modulated geometric phase, our compact metasource enables deterministic generation of diverse single-photon radiation patterns, including orbital-angular-momentum beams and holographic images. Our work brings versatile single-photon wavefront control into the nanoscale cavity quantum electrodynamics regime, offering a scalable route toward integrated sources of structured quantum light.

physics.optics↗

arXiv2026

2.5D co-packaged optical I/O chipsets on a SiON/Si interposer for 4 $\times$ 100G optical interconnection

Optical I/O technologies have emerged as a potential industrial solution for high-performance data interconnection in AI/ML computing acceleration. While optical I/Os are deployed at the edge of computational chips by co-packaged optics (CPO), flexible and high-performance integration architectures need to be explored to address system-level challenges. In this work, we present and experimentally demonstrate a SiON/Si-based optical interposer that integrates high-bandwidth and energy-efficient optical I/O chipsets. High-performance photonic and electronic components are co-packaged on the interposer, leading to low-loss, signal-integrity-friendly, and thermally efficient characteristics. The optical interposer incorporates low-loss SiON photonic circuits to realize scalable waveguide routing and wavelength-division multiplexing (WDM) with polarization-insensitive operation and high fabrication tolerance, while supporting flip-chip integration with InP-based active devices, including electro-absorption modulated lasers (EMLs) and photodetectors (PDs). Based on this architecture, a 400-Gb/s single-fiber optical transceiver is implemented and experimentally evaluated. Clear eye diagrams and high receiver sensitivity demonstrate reliable high-speed data transmission, which offers scalable, high-bandwidth optical I/Os in future high-performance computational clusters.

physics.optics↗

arXiv2026

Wide-angle emission in cylindrical moiré lattices enabled by rolling origami

Twisted photonic lattices that form moiré superlattices have attracted significant attention owing to their unique properties, such as strong field confinement and high-quality factors, in which the localized optical modes can serve as efficient light sources. However, in conventional moiré lattices, the emission direction of confined modes is typically fixed, and achieving a broad range of emission angles through simple modulation remains a significant challenge. Here, we design and fabricate single-layer moiré photonic lattices into cylindrical geometries using a nanomembrane origami technique. This approach enables wide-angle localized-mode emission while maintaining stable single-mode operation and excellent spectral uniformity. The moiré supercells support localized flat-band modes under various effective twist angles, resulting in the observation of periodic localized-mode emission over a wide range of azimuthal angles. Our research provides an approach for developing moiré light sources on curved surfaces, offering significant potential in applications that demand spatial light control, including three dimensional imaging, light detection and ranging, and topological states manipulation.

physics.optics↗

arXiv2025

On-Demand Growth of Semiconductor Heterostructures Guided by Physics-Informed Machine Learning

Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain constrained by simulation-based design and iterative trial-and-error optimization. Here, we introduce SemiEpi, a self-driving platform designed for molecular beam epitaxy (MBE) to perform multi-step semiconductor heterostructure growth through in-situ monitoring and on-the-fly feedback control. By integrating standard MBE reactors, physics-informed machine learning (ML) models, and parameter initialization, SemiEpi identifies optimal initial conditions and proposes experiments for heterostructure growth, eliminating the need for extensive expertise in MBE processes. As a proof of concept, we demonstrate the optimization of high-density InAs quantum dot (QD) growth with a target emission wavelength of 1240 nm, showcasing the power of SemiEpi. We achieve a QD density of 5 x 10^10 cm^-2, a 1.6-fold increase in photoluminescence (PL) intensity, and a reduced full width at half maximum (FWHM) of 29.13 meV, leveraging in-situ reflective high-energy electron diffraction monitoring with feedback control for adjusting growth temperatures. Taken together, our results highlight the potential of ML-guided systems to address challenges in multi-step heterostructure growth, facilitate the development of a hardware-independent framework, and enhance process repeatability and stability, even without exhaustive knowledge of growth parameters.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical.

physics.app-ph↗

arXiv2024

Analytical impact excitation of Er/O/B co-doped Si light emitting diodes

Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B co-doped Si light emitting diode which exhibits a strong electro-luminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.9 x 10^19 cm-3 and up to 45% of them are in excitation state by impact excitation. This work has important implications for developing efficient classical and quantum light sources based on rare earth elements.

cond-mat.mtrl-sci↗

arXiv2022

Double-Pulse Generation of Indistinguishable Single Photons with Optically Controlled Polarization

Single-photon sources play a key role in photonic quantum technologies. Semiconductor quantum dots can emit indistinguishable single photons under resonant excitation. However, the resonance fluorescence technique typically requires cross-polarization filtering which causes a loss of the unpolarized quantum dot emission by 50%. To solve this problem, we demonstrate a method to generate indistinguishable single photons with optically controlled polarization by two laser pulses off-resonant with neutral exciton states. This scheme is realized by exciting the quantum dot to the biexciton state and subsequently driving the quantum dot to an exciton eigenstate. Combining with magnetic field, we demonstrated the generation of photons with optically controlled polarization (polarization degree of 101(2)%), laser-neutral exciton detuning up to 0.81 meV, high single-photon purity (99.6(1)%) and indistinguishability (85(4)%). Laser pulses can be blocked using polarization and spectral filtering. Our work makes an important step towards indistinguishable single-photon sources with near-unity collection efficiency.

quant-ph↗

arXiv2020

Observation of photon antibunching with a single conventional detector

The second-order photon correlation function is of great importance in quantum optics which is typically measured with the Hanbury Brown and Twiss interferometer which employs a pair of single-photon detectors and a dual-channel time acquisition module. Here we demonstrate a new method to measure and extract the second-order correlation function with a standard single-photon avalanche photodiode (dead-time = 22 ns) and a single-channel time acquisition module. This is realized by shifting the informative coincidence counts near the zero-time delay to a time window which is not obliterated by the dead-time and after-pulse of detection system. The new scheme is verified by measuring the second-order correlation from a single colloidal nanocrystal. Photon antibunching is unambiguously observed and agrees well with the result measured using the standard HBT setup. Our scheme simplifies the higher-order correlation technique and might be favored in cost-sensitive circumstances.

quant-ph↗