arXiv subjects

Charles Gould

Publications and source records attributed to Charles Gould.

30 records · Page 2Linked to original sources

arXiv2017

Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system

In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.

cond-mat.mes-hall↗

arXiv2016

Impurity states in the magnetic topological insulator V:(Bi,Sb)$_2$Te$_3$

The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant photoemission spectroscopy. The signature of the V $3d$ impurity band was extracted, and exhibits a high density of states near Fermi level. First-principles calculations support the experimental results and indicate the coexistence of ferromagnetic superexchange and double exchange interactions. The observed impurity band is thus expected to contribute to the ferromagnetism via the interplay of different mechanisms.

cond-mat.str-el↗

arXiv2016

Cross correlations in disordered, four-terminal graphene-ribbon conductor: Hanbury-Brown and Twiss exchange as a sign of non-universality of noise

We have investigated current-current correlations in a cross-shaped conductor made of graphene ribbons. We measured auto and cross correlations and compared them with the theoretical predictions for ideal diffusive conductors. Our data deviate from these predictions and agreement can be obtained only by adding contributions from occupation-number noise in the central region connecting the arms of the cross. Furthermore, we have determined Hanbury -- Brown and Twiss (HBT) exchange correlations in this system. Contrary to expectations for a cross-shaped diffusive system, we find finite HBT exchange effects due to the occupation-number noise at the crossing. The strength of these HBT exchange correlations is found to vary with gate voltage, and very a distinct HBT effect with large fluctuations is observed near the Dirac point.

cond-mat.mes-hall↗

arXiv2015

$4π$-periodic Josephson supercurrent in HgTe-based topological Josephson junctions

The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot, ballistic channels). In recent years, considerable efforts have focused on the coupling of superconductors to topological insulators, in which transport is mediated by topologically protected Dirac surface states with helical spin polarization (while the bulk remains insulating). Here, the proximity of a superconductor is predicted to give rise to unconventional induced $p$-wave superconductivity, with a doublet of topologically protected gapless Andreev bound states, whose energies varies $4π$-periodically with the superconducting phase difference across the junction. In this article, we report the observation of an anomalous response to rf irradiation in a Josephson junction with a weak link of the 3D topological insulator HgTe. The response is understood as due to a $4π$-periodic contribution to the supercurrent, and its amplitude is compatible with the expected contribution of a gapless Andreev doublet.

cond-mat.mes-hall↗

arXiv2015

Phase-sensitive SQUIDs based on the 3D topological insulator HgTe

Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a 3D topological insulator to a nearby superconductor is expected to generate unconventional proximity induced $p$-wave superconductivity. We report here on the development and measurements of SQUIDs on the surface of strained HgTe, a 3D topological insulator, as a potential tool to investigate this effect.

cond-mat.mes-hall↗

arXiv2015

Tunable damping, saturation magnetization, and exchange stiffness of half-Heusler NiMnSb thin films

The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations from first principles to investigate how the composition of the epitaxially grown NiMnSb influences the magnetodynamic properties of saturation magnetization $M_S$, Gilbert damping $α$, and exchange stiffness $A$. $M_S$ and $A$ are shown to have a maximum for stoichiometric composition, while the Gilbert damping is minimum. We find excellent quantitative agreement between theory and experiment for $M_S$ and $α$. The calculated $A$ shows the same trend as the experimental data, but has a larger magnitude. Additionally to the unique in-plane anisotropy of the material, these tunabilities of the magnetodynamic properties can be taken advantage of when employing NiMnSb films in magnonic devices.

cond-mat.mtrl-sci↗

arXiv2014

Non-sinusoidal current-phase relationship in Josephson junctions from the 3D topological insulator HgTe

We use Superconducting QUantum Interference Device (SQUID) microscopy to characterize the current-phase relation (CPR) of Josephson Junctions from 3-dimentional topological insulator HgTe (3D-HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 nm to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with high transmittance, and the fact that the skewness persists in junctions that are longer than the mean free path suggests that the effect may be related to the helical nature of the Andreev bound states in the surface of HgTe.

cond-mat.mes-hall↗

arXiv2014

Control of the in-plane anisotropy in off-stoichiometric NiMnSb

NiMnSb is a ferromagnetic half-metal which, because of its rich anisotropy and very low Gilbert damping, is a promising candidate for applications in information technologies. We have investigated the in-plane anisotropy properties of thin, MBE-grown NiMnSb films as a function of their Mn concentration. Using ferromagnetic resonance (FMR) to determine the uniaxial and four-fold anisotropy fields, 2KU/Ms and 2K1/Ms, we find that a small variation in composition is sufficient to change the film from primarily four-fold to primarily uniaxial behavior, allowing for continuous tuning of the anisotropy. This provides valuable flexibility in designing new device geometries.

cond-mat.mes-hall↗

arXiv2012

Induced superconductivity in the three-dimensional topological insulator HgTe

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements. This anomaly originates from proximity-induced superconductivity in the HgTe surface states. In the most transparent junction, we observe periodic oscillations of the differential resistance as function of an applied magnetic field, which correspond to a Fraunhofer-like pattern. This unambiguously shows that a precursor of the Josephson effect occurs in the topological surface states of HgTe.

cond-mat.mes-hall↗

arXiv2012

Edge state transport through disordered graphene nanoribbons in the quantum Hall regime

The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse magnetoresistance of a narrow (60 nm) nanoribbon in a six-terminal Hall bar geometry. At B= 11 T, quantum Hall plateaux appear at $σ_{xy}=\pm2e^2/h$, $\pm6e^2/h$ and $\pm10e^2/h$, for which the Landau level spacing is larger than the Landau level broadening. Interestingly, the transport gap does not disappear in the quantum Hall regime, when the zero-energy Landau level is present at the charge neutrality point, implying that it cannot originate from a lateral confinement gap. At high charge densities, the longitudinal and Hall resistance exhibit reproducible fluctuations, which are most pronounced at the transition regions between Hall plateaux. Bias-dependent measurements strongly indicate that these fluctuations can be attributed to phase coherent scattering in the disordered ribbon.

cond-mat.mes-hall↗

arXiv2007

Spin-polarized transport in II-VI magnetic resonant tunneling devices

We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant Zeeman splitting in the presence of a moderately low magnetic field. As a consequence, when the quantum well is magnetically doped the current-voltage characteristics shows two peaks corresponding to transport for each spin channel. This behavior is experimentally observed and can be reproduced with a simple tunneling model. The model thus allows to analyze other configurations. First, we further increase the magnetic field, which leads to a spin polarization of the electronic current injected from the leads, thus giving rise to a relative change in the current amplitude. We demonstrate that the spin polarization in the emitter can be determined from such a change. Furthermore, in the case of a magnetically doped injector our model shows a large increase in peak amplitude and a shift of the resonance to higher voltages as the external field increases. We find that this effect arises from a combination of giant Zeeman splitting, 3-D incident distribution and broad resonance linewidth.

cond-mat.mes-hall↗

arXiv2004

Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers

We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the $d$ dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong $d$ dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.

cond-mat.mes-hall↗