Charles M. Brooks — Page 2

arXiv2014

Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO3

We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectric transition occurs above 1000 K. The symmetry of the magnetic structure in the ferroelectric state implies that this material is a strong candidate for linear magnetoelectric coupling and control of the ferromagnetic moment directly by an electric field.

cond-mat.str-el↗

arXiv2004

Evidence for power-law frequency dependence of intrinsic dielectric response in the CaCu$_{3}$Ti$_{4}$O$_{12}$

We investigated the dielectric response of CaCu$_3$Ti$_4$O$_{12}$ (CCTO) thin films grown epitaxially on LaAlO$_3$ (001) substrates by Pulsed Laser Deposition (PLD). The dielectric response of the films was found to be strongly dominated by a power-law in frequency, typical of materials with localized hopping charge carriers, in contrast to the Debye-like response of the bulk material. The film conductivity decreases with annealing in oxygen, and it suggests that oxygen deficit is a cause of the relatively high film conductivity. With increase of the oxygen content, the room temperature frequency response of the CCTO thin films changes from the response indicating the presence of some relatively low conducting capacitive layers to purely power law, and then towards frequency independent response with a relative dielectric constant $ε'\sim10^2$. The film conductance and dielectric response decrease upon decrease of the temperature with dielectric response being dominated by the power law frequency dependence. Below $\sim$80 K, the dielectric response of the films is frequency independent with $ε'$ close to $10^2$. The results provide another piece of evidence for an extrinsic, Maxwell-Wagner type, origin of the colossal dielectric response of the bulk CCTO material, connected with electrical inhomogeneity of the bulk material.

cond-mat.mtrl-sci↗