arXiv subjects

Charles Paillard

Publications and source records attributed to Charles Paillard.

At least 19 recordsLinked to original sources

arXiv2026

Interaction between point defects and vertical inversion domain walls in wurtzite AlN

Alloyed aluminium nitride compounds constitute a promising class of ferroelectric materials due to their high remanent electric polarizations, large band gaps and structural compatibility with a growth on Si substrates. Such materials nonetheless possess large coercive fields and polarization-switching mechanisms are still debated. We performed first-principles calculations to investigate the stability of isolated point defects in the vicinity of a vertical inversion domain wall (DW). We found that all studied defects are energetically more stable at or near the DW. Depending on their nature, they can have the opposite effect on the displacement of the DW, which occurs during polarization switching. Finally, we discuss how likely the different defects may be responsible for leaking currents and degraded ferroelectric properties.

cond-mat.mtrl-sci↗

arXiv2026

Systematic comparison of approximations and functionals in first-principle calculations of aluminum-based III-V ferroelectric nitrides

We revisit first-principles predictions of structural, ferroelectric, and electronic properties in aluminum-based III-V nitride alloys, focusing on Al1-xScxN and Al1-xBxN. Using density functional theory within a unified 48-atom supercell framework, we systematically assess the role of chemical disorder and exchange-correlation approximations by comparing the virtual crystal approximation (VCA) and special quasirandom structures (SQS), as well as PBE, PBESol, SCAN, and SCAN+rVV10 functionals. We demonstrate that, even amongst the similar PBE and PBESol functionals, big quantitative and qualitative differences emerge. In particular, the VCA or SQS PBESol (a popular functional) strongly underestimate the stability domain of the ferroelectric wurtzite phase in Al1-xScxN compared to SQS PBE or SQS SCAN. We demonstrate that the 5-fold coordinated hexagonal phase predicted in 2002 by Farrer and Bellaiche [Phys. Rev. B 66, 201203] is a low-energy metastable state between the four-fold coordinated ferroelectric wurtzite phase and the six-fold coordinated rocksalt phase near the transition point upon increasing the Sc content. In contrast, Al1-xBxN shows a much faster destabilization of the wurtzite ferroelectric phase, with bond breaking which strongly distorts the wurtzite structure (with enhanced polarization) and eventually favor a zincblende phase and a threefold coordinated hexagonal layer phase. Our analysis highlights the critical importance of both local disorder and exchange-correlation treatment in predicting the functional properties of III-V nitride ferroelectrics. Overall, SQS combined with SCAN provides the most consistent theoretical framework for understanding and optimizing emerging nitride-based ferroelectric materials.

cond-mat.mtrl-sci↗

arXiv2026

Light-Driven Ferroic Switching Enables Reversible Control of Hydrogen Adsorption Thermodynamics

Reversible ultrafast switching of surface thermodynamics is highly desirable for hydrogen storage and catalysis yet remains elusive at the nanoscale. Here we demonstrate that photoinduced ferroic-order switching in two-dimensional ionic ferroelectric monolayers enables rapid, reversible control of hydrogen binding. In TiGeSe$_3$, carrier-density-driven redistribution of transition-metal 3\textit{d} orbital occupations triggers a sequential evolution from the ferroelectric ground state to paraelectric phases with staggered or Zig-Zag antiferromagnetic order. This switch continuously tunes the hydrogen adsorption free energy from 0.33 to 1.11 eV, shifting the interface from near-thermoneutrality to spontaneous desorption. Nonadiabatic dynamics indicate that electron-phonon coupling promotes nonthermal H release, while picosecond carrier recombination rapidly restores the initial ferroic order, closing an ultrafast reversible cycle. Generality is further validated in AgBiP$_2$Se$_6$ and CuInP$_2$S$_6$, establishing ferroic order as an optically addressable knob for dynamic thermodynamic reconfiguration beyond static design.

cond-mat.mtrl-sci↗

arXiv2026

Uncovering Antipolar Ordering and Pressure-Tunable Phases in Hexagonal LaN

We predict an antipolar instability in hexagonal LaN using first-principles density functional theory. Starting from a nonpolar hexagonal phase, we identify competing polar and antipolar zone-center phonon instabilities. Condensation of the polar and antipolar modes stabilizes, respectively, dynamically stable wurtzite (WZ) phase and an hexagonal antipolar (AP) phase which is characterized by alternating local polarization and zero net macroscopic polarization within the unit cell. At ambient conditions, the AP phase is metastable with respect to the WZ phase, and a finite energy barrier exists between these phases, suggesting a possible polarization-switching pathway via the AP intermediate state. The energy barrier between the WZ and AP phases decreases with increasing pressure, indicating enhanced tunability between polar and antipolar states. The sublattice polarization increases with pressure in the AP phase, while it decreases in the WZ phase. We further find that, with increasing pressure, the rock-salt and tetragonal phases of LaN become more stable than the hexagonal phases (AP and WZ). Consequently, the realization of the AP phase is more favorable in the low-pressure regime, where hexagonal phases remain energetically competitive. These results demonstrate pressure-driven competition between polar and antipolar phases in LaN and point toward antiferroelectric-like behavior in this binary nitride system.

cond-mat.mtrl-sci↗

arXiv2026

Giant photostriction in lead-free ferroelectric stemming from photo-excited thermalized carriers

Ferroelectrics are polar materials whose polarization can be switched by applying electric fields; they offer unique opportunities to develop performant photostrictive materials, i.e., materials that can deform under visible light illumination. Naturally devoid of inversion symmetry, they exhibit original photogalvanic effects such as the Bulk Photovoltaic Effect, which relies on ``hot'' photoexcited carriers. It has long been thought that the electric field generated by this effect may couple to the natural piezoelectric abilities of ferroelectrics to provide large photoinduced deformations. However, due to competing effects, such as thermal dilatation, deformation potential, polarization, or depolarizing-field screening by \textit{thermalized} carriers, it remains unclear which microscopic phenomena govern the photoinduced deformations in classical ferroelectric materials. Here, we demonstrate the largest photoinduced deformation measured in a ferroelectric thin film. Reaching 1 %, this giant photostriction likely originates from the contribution of thermalized photoinduced carriers.

cond-mat.mtrl-sci↗

arXiv2026

Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations

Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D film growth at tilted 2D planes to observed spiral structures, thereby calling for a deeper understanding of the impact of the substrate interface on the growth of GaSe films. In this paper, we conduct a comprehensive reexamination of the growth mechanism of GaSe on GaAs substrates with (211)B and (001)B orientations, investigating the nature of the 2D/3D interface and the resulting morphology of the 2D GaSe films. We do this by investigating different methods of preparation of the GaAs substrate surface before the growth of GaSe by MBE, the importance of which has not been considered before. Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy. This framework provides a scalable interface-engineering pathway for deterministic control of layered chalcogenide heterostructures and enables wafer-scale integration with established semiconductor device platforms.

cond-mat.mtrl-sci↗

arXiv2025

On the origin of the unusual strain morphologies and polar Moir\'e patterns in twisted ferroelectrics

Density functional theory calculations are conducted to understand and reveal the origin of the complex shear strain morphology and of the polar Moir\'e topological pattern recently observed in twisted BaTiO$_3$ bilayers. Our first-principles calculations, along with an original analysis of them allowing the decomposition of forces into the acoustic and optical contributions, point out to the occurrence of forces mostly acting on the {\it acoustic-related} motions to produce the standing waves of the shear strain. Such acoustic waves naturally generate a striking self-organization of the shear strains, and hence create a peculiar gradient of these shear strains. A Moir\'e dipole pattern, consisting of the interpenetrated arrays of vortices and antivortices made of the electric dipoles, then mostly arises due to the coupling of this gradient of the shear strain with the electric dipoles. Furthermore, other forces, namely acting on the motions associated with the {\it optical phonons}, could also play a role in the formation of these polar vortices and antivortices, but at a smaller extent.

cond-mat.mtrl-sci↗

arXiv2025

Size-effects on shift-current in layered CuInP$_2$S$_6$

Two-dimensional ferroelectrics have recently emerged as a promising avenue for next-generation optoelectronic and photovoltaic devices. Due to the intrinsic absence of inversion symmetry, 2D ferroelectrics exhibit bulk photovoltaic effect (BPVE), which relies on hot, non-thermalized photo-excited carriers to generate a photo-induced current with enhanced performances thanks to efficient charge separation mechanisms. The absence of a required p-n junction architecture makes these materials particularly attractive for nanoscale energy harvesting. Recent studies have reported enhanced BPVE in nanometer-thick CuInP$_2$S$_6$ ferroelectric embedded between two graphene wafers, driven by relatively strong polarization and reduced dimensionality. Short circuit photocurrent density values have been observed to reach up to mA/cm$^2$. In this paper, we demonstrate that the shift-current mechanism alone cannot fully account for these high conductivity values, suggesting that additional mechanisms may play a significant role. Furthermore, our work confirms the existence of a strong size effect, which drastically reduces the shift-conductivity response in the bulk limit, in agreement with experimental observations.

cond-mat.mtrl-sci↗

arXiv2025

Electro-optic effects in some sliding ferroelectrics

Sliding ferroelectrics, which exhibit out-of-plane polarization arising from specific stacking rather than conventional ionic displacements, are new types of ferroelectrics whose underdeveloped physics needs to be explored. Here, we investigate the electro-optic (EO) response of these materials using first-principles calculations, focusing on ZrI$_{2}$ as a prototype. We reveal that, contrary to conventional ferroelectrics, the EO effect in ZrI$_{2}$ is dominated by its electronic contribution rather than the ionic one, which promises faster EO responses. Furthermore, both biaxial and uniaxial strains significantly enhance this response, and a universal-like linear relationship between the band gap and such response is discovered. We also report a large elasto-optic coefficient that is independent of biaxial strain. Similar large linear EO coefficients and properties are found in other sliding ferroelectrics, including different zirconium dihalides, as well as BN and BP bilayers. These findings highlight sliding ferroelectrics as highly promising candidates for ultrafast nonlinear optical devices and reveal unusual mechanisms.

cond-mat.mtrl-sci↗

arXiv2025

Towards a deeper fundamental understanding of (Al,Sc)N ferroelectric nitrides

Density Functional Theory (DFT) calculations, within the virtual crystal alloy approximation, are performed, along with the development of a Landau-type model employing a symmetry-allowed analytical expression of the internal energy and having parameters being determined from first principles, to investigate properties and energetics of Al1-xScxN ferroelectric nitrides in their hexagonal forms. These DFT computations and this model predict the existence of two different types of minima, namely the 4-fold-coordinated wurtzite (WZ) polar structure and a 5-times paraelectric hexagonal phase (to be denoted as H5), for any Sc composition up to 40%. The H5 minimum progressively becomes the lowest energy state within hexagonal symmetry as the Sc concentration increases from 0 to 40%. Furthermore, the model points out to several key findings. Examples include the crucial role of the coupling between polarization and strains to create the WZ minimum, in addition to polar and elastic energies, and that the origin of the H5 state overcoming the WZ phase as the global minimum within hexagonal symmetry when increasing the Sc composition mostly lies in the compositional dependency of only two parameters, one linked to the polarization and another one being purely elastic in nature. Other examples are that forcing Al1-xScxN systems to have no or a weak change in lattice parameters when heating them allows to reproduce well their finite-temperature polar properties, and that a value of the axial ratio close to that of the ideal WZ structure does imply a large polarization at low temperatures but not necessarily at high temperatures because of the ordered-disordered character of the temperature-induced formation of the WZ state. Such findings should allow for a better fundamental understanding of (Al,Sc)N ferroelectric nitrides, which may be used to design efficient devices operating at low voltages.

cond-mat.mtrl-sci↗

arXiv2025

Domain-Wall Mediated Polarization Switching in Ferroelectric AlScN: Strain Relief and Field-Dependent Dynamics

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic switching dynamics is therefore critical for tailoring $E_c$. Here, we combine density functional theory and machine-learning molecular dynamics to elucidate the polarization switching mechanisms in AlScN over various Sc concentrations and applied electric fields. We find that excessive lattice strain strictly prohibits collective polarization switching, but the pre-existing domain walls relieve strain and lead to a distinct switching dynamics -- dictating a field-dependent switching mechanism. At low electric fields, switching occurs via gradual domain-wall propagation consistent with the Kolmogorov-Avrami-Ishibashi model. In contrast, high fields stimulate additional nucleation, driving a rapid, homogeneous reversal process described by the simultaneous non-linear nucleation and growth model. These findings highlight the critical role of domain-wall dynamics and suggest domain engineering as a viable strategy to tailor coercive fields in AlScN and related ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Abinit 2025: New Capabilities for the Predictive Modeling of Solids and Nanomaterials

Abinit is a widely used scientific software package implementing density functional theory and many related functionalities for excited states and response properties. This paper presents the novel features and capabilities, both technical and scientific, which have been implemented over the past 5 years. This evolution occurred in the context of evolving hardware platforms, high-throughput calculation campaigns, and the growing use of machine learning to predict properties based on databases of first principles results. We present new methodologies for ground states with constrained charge, spin or temperature; for density functional perturbation theory extensions to flexoelectricity and polarons; and for excited states in many-body frameworks including GW, dynamical mean field theory, and coupled cluster. Technical advances have extended abinit high-performance execution to graphical processing units and intensive parallelism. Second principles methods build effective models on top of first principles results to scale up in length and time scales. Finally, workflows have been developed in different community frameworks to automate \abinit calculations and enable users to simulate hundreds or thousands of materials in controlled and reproducible conditions.

cond-mat.mtrl-sci↗

arXiv2025

Photoinduced phase transitions and lattice deformation in 2D NbOX$_{2}$ (X=Cl, Br, I)

We present a comprehensive investigation of light-induced phase transitions and strain in two-dimensional NbOX$_{2}$ (X = Cl, Br, I) using first-principles calculations. In particular, we identify a light-induced ferroelectric-to-paraelectric phase transition in these 2D systems. Furthermore, we demonstrate the possibility of inducing an antiferroelectric-to-paraelectric transition under illumination. Additionally, we find that these 2D systems exhibit significant photostrictive behavior, adding a new functionality to their already notable optical properties. The ability to control and manipulate ferroelectric order in these nanoscale materials through external stimuli, such as light, holds considerable promise for the development of next-generation electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Photogalvanic Shift Currents in BiFeO3 --LaFeO3 Superlattices

Designing materials with controlled photovoltaic response may lead to improved solar cells or photosensors. In this regard, ferroelectric superlattices have emerged as a rich platform to engineer functional properties. In addition, ferroelectrics are naturally endowed with a bulk photovoltaic response stemming from non-thermalized photoexcited carriers, which can overcome the fundamental limits of current solar cells. Yet, their photovoltaic output has been limited by poor optical absorption and poor charge collection or photo-excited carrier mean free path. We use Density Functional Theory and Wannierization to compute the so-called Bulk Photovoltaic shift current and the optical properties of BiFeO3/LaFeO3 superlattices. We show that, by stacking these two materials, not only the optical absorption is improved at larger wavelengths (due to LaFeO3 smaller bandgap), but the photovolgavanic shift current is also enhanced compared to that of pure BiFeO3 , by suppressing the destructive interferences occurring between different wavelengths.

cond-mat.mtrl-sci↗

arXiv2024

Giant electro-optic and elasto-optic effects in ferroelectric NbOI$_{2}$

First-principles calculations are performed to investigate the electro-optic (EO) and elasto-optic effects of the three-dimensional (bulk) and two-dimensional (monolayer) ferroelectric NbOI$_{2}$. Remarkably large linear EO and elasto-optic coefficients are discovered in both systems, when under stress-free conditions. We further found that the EO responses of bulk and monolayer NbOI$_{2}$ can be further enhanced with epitaxial strain, because of a strain-driven ferroelectric-to-paraelectric transition that originates from the softening of some polar optical modes. Our findings thus point out that NbOI$_{2}$, as well as other niobium oxide dihalides are highly promising for paving the way for potentially efficient nonlinear optical device applications.

cond-mat.mtrl-sci↗

arXiv2024

Tailoring photostriction via superlattices engineering

We report systematic first-principles investigation of light-induced mechanical deformations in monodomain (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{n}$ superlattices ($n=1-5$). We reveal that photostriction in these heterostructures quantitatively and qualitatively depends on the chemical period $n$. Specifically, we show that by changing the chemical period, we can induce $\textit {positive}$ or $\textit {negative}$ photostriction. We also present a simple analytical model to account for the calculated deformations. Our findings indicate that superlattices architectures may be key to design novel optomechanical applications.

cond-mat.mtrl-sci↗

arXiv2024

Tuning photostriction in (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{m}$ superlattices via chemical composition: An $\textit{ab-initio}$ study

Light-induced mechanical deformations in single-domain (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{m}$ superlattices were simulated using first-principle calculations. By varying the chemical fraction PbTiO$_{3}$, we discover that these heterostructures' photostrictive behavior can be tuned quantitatively and qualitatively. Additionally, we present simple analytical models to explain the calculated deformations and predict a critical PbTiO$_{3}$ fraction with no photostriction. In addition to the report in [1], our results present another way for tuning the photostrictive behavior of (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{m}$ superlattices, which could be utilized for innovative optomechanical applications.

cond-mat.mtrl-sci↗

arXiv2024

Strain-induced bent domains in ferroelectric nitrides

Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new phenomena. Density functional theory calculations are performed to investigate the effect of epitaxial strain on multidomains of (Al,Sc)N nitride systems and to compare it with the monodomain case. The multidomain systems are predicted to have five strain-induced regions, to be denoted as Regions I to V, respectively. Each of these regions is associated with rather different values or behaviors of physical properties such as axial ratio, polarizations, internal parameters, bond lengths, etc. Of particular interest is the prediction of bent domains under compressive strain extending beyond $-$5.5%, which indicates that domain walls may play a key role in the mechanical failure properties of these systems. Interestingly, such bending induces the creation of a finite in-plane polarization (in addition to out-of-plane dipoles) due to geometric and symmetry considerations. Strikingly too, the bent domains have lower energy than the wurtzite monodomains and have atomically sharp boundaries. Our findings may pave the way for domain wall engineering in ferroelectric nitrides.

cond-mat.mtrl-sci↗