arXiv subjects

Charles Tahan

Publications and source records attributed to Charles Tahan.

At least 55 records · Page 3Linked to original sources

arXiv2014

Electron spin resonance and spin-valley physics in a silicon double quantum dot

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

cond-mat.mes-hall↗

arXiv2014

Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor

Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but extraordinary quantum properties for a solid-state system. It might be possible to merge the two approaches, making single-crystal superconducting devices out of a semiconductor by utilizing the latest atomistic fabrication techniques. Here we propose superconducting devices made from precision hole-doped regions within a silicon (or germanium) single crystal. We analyze the properties of this superconducting semiconductor and show that practical superconducting wires, Josephson tunnel junctions or weak links, superconducting quantum interference devices (SQUIDs), and qubits are feasible. This work motivates the pursuit of "bottom-up" superconductivity for improved or fundamentally different technology and physics.

cond-mat.mes-hall↗

arXiv2013

Toward engineered quantum many-body phonon systems

Arrays of coupled phonon cavities each including an impurity qubit in silicon are considered. We study experimentally feasible architectures that can exhibit quantum many-body phase transitions of phonons, e.g. Mott insulator and superfluid states, due to a strong phonon-phonon interaction (which is mediated by the impurity qubit-cavity phonon coupling). We investigate closed equilibrium systems as well as driven dissipative non-equilibrium systems at zero and non-zero temperatures. Our results indicate that quantum many-body phonon systems are achievable both in on-chip nanomechanical systems in silicon and distributed Bragg reflector phonon cavity heterostructures in silicon-germanium. Temperature and driving field are shown to play a critical role in achieving these phonon superfluid and insulator states, results that are also applicable to polariton systems. Experimental procedures to detect these states are also given. Cavity-phoniton systems enable strong phonon-phonon interactions as well as offering long wavelengths for forming extended quantum states; they may have some advantage in forming truly quantum many-body mechanical states as compared to other optomechanical systems.

cond-mat.mes-hall↗

arXiv2013

Observation of Autler-Townes effect in a dispersively dressed Jaynes-Cummings system

Photon number splitting is observed in a transmon coupled to a superconducting quasi-lumped-element resonator in the strong dispersive limit. A thermal population of 5.474 GHz photons at an effective resonator temperature of T = 120mK results in a weak n = 1 photon peak along with the n = 0 photon peak in the qubit spectrum in the absence of a coherent drive on the resonator. Two-tone spectroscopy using independent coupler and probe tones reveals an Autler-Townes splitting in the thermal n = 1 photon peak. The observed effect is explained accurately using the four lowest levels of the dispersively dressed qubit-resonator system and compared to results from numerical simulations of the steady-state master equation for the coupled system.

quant-ph↗

arXiv2013

On-chip cavity quantum phonodynamics with an acceptor qubit in silicon

We describe a chip-based, solid-state analogue of cavity-QED utilizing acoustic phonons instead of photons. We show how long-lived and tunable acceptor impurity states in silicon nanomechanical cavities can play the role of a matter non-linearity for coherent phonons just as, e.g., the Josephson qubit plays in circuit-QED. Both strong coupling (number of Rabi oscillations ~ 100) and strong dispersive coupling (0.1-2 MHz) regimes can be reached in cavities in the 1-20 GHz range, enabling the control of single phonons, phonon-phonon interactions, dispersive phonon readout of the acceptor qubit, and compatibility with other optomechanical components such as phonon-photon translators. We predict explicit experimental signatures of the acceptor-cavity system.

cond-mat.mes-hall↗

arXiv2013

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The relaxation times depend sensitively on system parameters such as the dot size and the external magnetic field. Generally, however, orbital relaxation times are short in strained silicon (from a tenth of a microsecond to picoseconds), spin relaxation times are long (microseconds to greater than seconds), while valley relaxation times are expected to lie in between. The focus is on relaxation due to emission or absorption of phonons, but for spin relaxation we also consider competing mechanisms such as charge noise. Where appropriate, comparison is made to reference systems such as quantum dots in III-V materials and silicon donor states. The phonon bottleneck effect is shown to be rather small in the silicon dots of interest. We compare the theoretical predictions to some recent spin relaxation experiments and comment on the possible effects of non-ideal dots.

cond-mat.mes-hall↗

arXiv2013

Phonitons as a sound-based analogue of cavity quantum electrodynamics

A quantum mechanical superposition of a long-lived, localized phonon and a matter excitation is described. We identify a realization in strained silicon: a low-lying donor transition (P or Li) driven solely by acoustic phonons at wavelengths where high-Q phonon cavities can be built. This phonon-matter resonance is shown to enter the strongly coupled regime where the "vacuum" Rabi frequency exceeds the spontaneous phonon emission into non-cavity modes, phonon leakage from the cavity, and phonon anharmonicity and scattering. We introduce a micropillar distributed Bragg reflector Si/Ge cavity, where Q=10^5-10^6 and mode volumes V<=25*lambda^3 are reachable. These results indicate that single or many-body devices based on these systems are experimentally realizable.

cond-mat.mes-hall↗

arXiv2008

Quantum phase transitions in photonic cavities with two-level systems

Systems of coupled photonic cavities have been predicted to exhibit quantum phase transitions by analogy with the Hubbard model. To this end, we have studied topologies of few (up to six) photonic cavities each containing a single two-level system. Quantum phase space diagrams are produced for these systems, and compared to mean-field results. We also consider finite effective temperature, and compare this to the notion of disorder. We find the extent of the Mott lobes shrink analogously to the conventional Bose-Hubbard model.

cond-mat.other↗

arXiv2008

Quantum Fluctuations, Temperature and Detuning Effects in Solid-Light Systems

The superfluid to Mott insulator transition in cavity polariton arrays is analyzed using the variational cluster approach, taking into account quantum fluctuations exactly on finite length scales. Phase diagrams in one and two dimensions exhibit important non-mean-field features. Single-particle excitation spectra in the Mott phase are dominated by particle and hole bands separated by a Mott gap. In contrast to Bose-Hubbard models, detuning allows for changing the nature of the bosonic particles from quasi-localized excitons to polaritons to weakly interacting photons. The Mott state with density one exists up to temperatures $T/g\gtrsim0.03$, implying experimentally accessible temperatures for realistic cavity couplings $g$.

cond-mat.other↗

arXiv2007

Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture for QIP and also for spin electronics (spintronics) applications. While the charge of an electron is easily manipulated by charged gates, the spin degree of freedom is well isolated from charge fluctuations. Inherently small spin-orbit coupling and the existence of a spin-zero Si isotope facilitate long single spin qubit coherence times. Here we consider the relaxation properties of localized electronic states in silicon due to donors, quantum wells, and quantum dots, including effects due to phonons and Rashba spin-orbit coupling. Our analysis is impeded by the complicated, many-valley band structure of silicon and previously unaddressed physics in silicon quantum wells. We find that electron spins in silicon and especially strained silicon have excellent decoherence properties. Where possible we compare with experiment to test our theories. We go beyond issues of coherence in a quantum computer to problems of control and measurement. Precisely what makes spin relaxation so long in semiconductor architectures makes spin measurement so difficult. To address this, we propose a new scheme for spin readout which has the added benefit of automatic spin initialization, a vital component of quantum computing and quantum error correction. Our results represent important practical milestones on the way to the design and construction of a silicon-based quantum computer.

cond-mat.mtrl-sci↗

arXiv2007

Spookytechnology and Society

New technologies based on the exploitation of so-called "second order" quantum phenomena - such as quantum entanglement - deserve a public-friendly, rational, and sexy name. Spookytechnology is that unifying term. From historical and motivational perspectives, this name has greater value than the many variations of quantum this and quantum that presently used. As many already believe, the pursuit of spookytechnology has profound implications for the development of the physical and information sciences and ultimately for society at large. Spookytechnology will find its place in the increasingly dense line of major technological revolutions of our time: quantum, info, bio, nano, spooky.

physics.pop-ph↗

arXiv2007

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.

cond-mat.mes-hall↗

arXiv2006

The Nanotechnology R(evolution)

Nanotechnology as a social concept and investment focal point has drawn much attention. Here we consider the place of nanotechnology in the second great technological revolution of mankind that began some 200 years ago. The so-called nanotechnology revolution represents both a continuation of prior science and technology trends and a re-awakening to the benefits of significant investment in fundamental research. We consider the role the military might play in the development of nanotechnology innovations, nanotechnology's context in the history of technology, and the global competition to lead the next technological revolution.

physics.soc-ph↗

arXiv2006

Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas

The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK.

cond-mat.mes-hall↗

arXiv2006

Identifying Nanotechnology in Society

Manufacturing materials and systems with components thousands of times smaller than the width of a human hair promises vast and sometimes unimaginable advances in technology. Yet the term nanotechnology has formed as much from people's expectations as from scientific reality. Understanding the creation and context of this social construction can help us appreciate and guide what may be a burgeoning revolution. This chapter considers what different groups are referring to when they say nanotechnology, how this relates to the science involved, and how the various definitions of this broad field of endeavor might be improved. The ramifications and implications of these seemingly innocuous naming choices are also discussed. Although in many respects nanotechnology serves as cover justification for increased spending in the physical sciences, at present it is the most hopeful route to solving some of the planet's greatest problems.

physics.soc-ph↗

arXiv2006

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.

cond-mat.mtrl-sci↗

arXiv2006

Quantum phase transitions of light

Recently, condensed matter and atomic experiments have reached a length-scale and temperature regime where new quantum collective phenomena emerge. Finding such physics in systems of photons, however, is problematic, as photons typically do not interact with each other and can be created or destroyed at will. Here, we introduce a physical system of photons that exhibits strongly correlated dynamics on a meso-scale. By adding photons to a two-dimensional array of coupled optical cavities each containing a single two-level atom in the photon-blockade regime, we form dressed states, or polaritons, that are both long-lived and strongly interacting. Our zero temperature results predict that this photonic system will undergo a characteristic Mott insulator (excitations localised on each site) to superfluid (excitations delocalised across the lattice) quantum phase transition. Each cavity's impressive photon out-coupling potential may lead to actual devices based on these quantum many-body effects, as well as observable, tunable quantum simulators. We explicitly show that such phenomena may be observable in micro-machined diamond containing nitrogen-vacancy colour centres and superconducting microwave strip-line resonators.

cond-mat.other↗

arXiv2006

Nanotechnology and Society: A discussion-based undergraduate course

Nanotechnology has emerged as a broad, exciting, yet ill-defined field of scientific research and technological innovation. There are important questions about the technology's potential economic, social, and environmental implications. We discuss an undergraduate course on nanoscience and nanotechnology for students from a wide range of disciplines, including the natural and social sciences, the humanities, and engineering. The course explores these questions and the broader place of technology in contemporary societies. The course is built around active learning methods and seeks to develop the students' critical thinking skills, written and verbal communication abilities, and general knowledge of nanoscience and nanoengineering concepts. Continuous assessment was used to gain information about the effectiveness of class discussions and enhancement of student understanding of the interaction between nanotechnology and society.

physics.soc-ph↗