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Chase Hansen

Publications and source records attributed to Chase Hansen.

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From Femtoseconds to Gigaseconds: The SolDeg Platform for the Performance Degradation Analysis of Silicon Heterojunction Solar Cells

Heterojunction Si solar cells exhibit notable performance degradation. We developed the SolDeg platform to model this degradation as electronic defects getting generated by thermal activation across energy barriers over time. First, molecular dynamics simulations were performed to create a-Si/c-Si stacks, using a machine-learning-based Gaussian approximation potential. Second, we created shocked clusters by a cluster blaster. Third, the shocked clusters were analyzed to identify which of them supported electronic defects. Fourth, the distribution of energy barriers that control the generation of these electronic defects was determined. Fifth, an accelerated Monte Carlo method was developed to simulate the thermally activated time dependent defect generation across the barriers. Our main conclusions are as follows. (1) The degradation of a-Si/c-Si stacks via defect generation is controlled by a broad distribution of energy barriers. (2) We developed the SolDeg platform to track the microscopic dynamics of defect generation across this wide barrier distribution, and determined the time dependent defect density $N(t)$ from femtoseconds to gigaseconds, over 24 orders of magnitude in time. (3) We have shown that a stretched exponential analytical form can successfully describe the defect generation $N(t)$. (4) We found that in relative terms $V_\mathrm{oc}$ degrades at a rate of 0.2%/year over the first year, slowing with advancing time. (5) We developed the Time Correspondence Curve to calibrate and validate the accelerated testing of solar cells. We found a compellingly simple scaling relationship between accelerated and normal times $t_\mathrm{accelerated} \propto t_\mathrm{normal}^{0.85}$. (6) We ourselves carried out experimental studies of defect generation in a-Si:H/c-Si stacks. We found a relatively high degradation rate at early times, that slowed considerably at longer time scales.

cond-mat.mtrl-sci

Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS

The efficiency of nanoparticle (NP) solar cells has grown impressively in recent years, exceeding 16%. However, the carrier mobility in NP solar cells, and in other optoelectronic applications remains low, thus critically limiting their performance. Therefore, carrier transport in NP solids needs to be better understood to further improve the overall efficiency of NP solar cell technology. However, it is technically challenging to simulate experimental scale samples, as physical processes from atomic to mesoscopic scales all crucially impact transport. To rise to this challenge, here we report the development of TRIDENS: the Transport in Defected Nanoparticle Solids Simulator, that adds three more hierarchical layers to our previously developed HINTS code for nanoparticle solar cells. In TRIDENS, we first introduced planar defects, such as twin planes and grain boundaries into individual NP SLs that comprised the order of 10^3 NPs. Then we used HINTS to simulate the transport across tens of thousands of defected NP SLs, and constructed the distribution of the NP SL mobilities with planar defects. Second, the defected NP SLs were assembled into a resistor network with more than 10^4 NP SLs, thus representing about 10^7 individual NPs. Finally, the TRIDENS results were analyzed by finite size scaling to explore whether the percolation transition, separating the phase where the low mobility defected NP SLs percolate, from the phase where the high mobility undefected NP SLs percolate drives a low-mobility-to-high-mobility transport crossover that can be extrapolated to macroscopic length scales. For the theoretical description, we adapted the Efros-Shklovskii bimodal mobility distribution percolation model. We demonstrated that the ES bimodal theory's two-variable scaling function is an effective tool to quantitatively characterize this low-mobility-to-high-mobility transport crossover.

cond-mat.mes-hall

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Persistent Gap Across the Disorder-localized-to-Mott-localized Transition

We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multi-orbital Hubbard model at and away from integer filling by Dynamical Mean Field Theory. This approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios and phase diagrams produced by the two methods are strikingly similar, and account for the mobilities measured in NP solids.

cond-mat.mes-hall