arXiv subjects

Chen-Bei Hao

Publications and source records attributed to Chen-Bei Hao.

4 recordsLinked to original sources

arXiv2026

Boundary-induced helical bulk acoustic transport in LiNbO3 thin films

We experimentally demonstrate boundary-induced helical bulk states (BI-HBSs) for RF acoustic transport in LiNbO3 thin-film phononic crystals (approximately 175-200 MHz). A boundary-symmetry selection rule at an accidental Γ-point fourfold degeneracy creates interior bulk channels that couple to wide-aperture interdigital transducers without edge-aperture mismatch. Near-field vibrometry and two-port RF S-parameters confirm low-loss propagation with strongly suppressed backscattering through wavelength-scale defects. The helical band also provides slow-wave, low-dispersion delay and phase control on chip.

physics.app-ph↗

arXiv2026

Complementary-polarity double-layer LiTaO3 resonators for symmetry-selective SH2 excitation with ultrahigh electromechanical coupling (kt^2 = 25.7%)

We report a structurally simple double-layer lithium tantalate (LiTaO3) bulk acoustic resonator that enables symmetry-selective excitation of the second-order thickness-shear (SH2) mode with ultrahigh electromechanical coupling. Two 31 deg Y-oriented single-crystal LiTaO3 films are rotation-bonded with complementary polarization (+X/-X) and driven by a longitudinal electric field. Matching between the effective piezoelectric symmetry and the SH2 mode yields an effective electromechanical coupling coefficient of kt^2 = 25.7% at 5.24 MHz. To our knowledge, this is the highest kt^2 reported for a LiTaO3 resonator architecture to date. The measured response is dominated by the target SH2 mode, with only weak parasitic features in the operating band. The structure is also tunable: the resonance frequency and coupling can be adjusted through geometric parameters while maintaining stable modal behavior, indicating good process tolerance. Finite-element analysis further suggests straightforward frequency scaling beyond 5 GHz by reducing the film and electrode thickness while preserving approximately 25% kt^2. In addition, introducing a SiO2 compensation layer is predicted to improve the temperature coefficient of frequency to approximately -25 ppm/deg C. These results establish complementary-polarity double-layer LiTaO3 as a practical platform for high-coupling, spurious-suppressed acoustic resonators and provide a scalable route toward wideband ultrasonic resonators, filters, and related transducers.

physics.app-ph↗

arXiv2024

K-band LiNbO3 A3 Lamb-wave Resonators with Sub-wavelength Through-holes

Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating sub-wavelength through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance--including operating frequency, electromechanical coupling coefficient, and quality factor--without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LN film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters.

physics.app-ph↗

arXiv2024

Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, RaR close to 28%, and no spurious modes. This ultra-large electromechanical coupling coefficient, which is close to the upper limit of LiNbO3, is much larger than all microwave acoustic resonators reported so far. Based on X-cut thin-film LiNbO3, when the film thickness is in the order of hundreds of nanometers, the frequency of the fundamental mode of the resonator can cover 1GHz to10GHz. The resonator design is convenient and flexible. The resonant frequency can be modulated monotonically by changing either the electrode or the thickness of the thin-film LiNbO3 without introducing additional spurious modes. This ideal resonator architecture is also applicable to LiTaO3. With the development of the new generation of mobile communications, this resonator is expected to become a key solution for future high-performance, ultra-wide-bandwidth acoustic filters.

physics.app-ph↗