arXiv subjects

Cheng Zhang

Publications and source records attributed to Cheng Zhang.

At least 505 records · Page 28Linked to original sources

arXiv2017

Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5

Zirconium pentatelluride ZrTe$_5$, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3$\times$10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature $T_p$. $T_p$ is found to scale approximately as $n_H^{0.27}$, where the Hall carrier concentration $n_H$ is linked with the Fermi level by $ε_F$ $\propto$ $n_H^{1/3}$ in a linearly dispersed Dirac band. This relation indicates $T_p$ monotonically increases with $ε_F$, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2016

Evidence for pressure-induced node-pair annihilation in Cd3As2

As an intermediate state in the topological phase diagram, Dirac semimetals are of particular interest as a platform for studying topological phase transitions under external modulations. Despite a growing theoretical interest in this topic, it remains a substantial challenge to experimentally tune the system across topological phase transitions. Here, we investigate the Fermi surface evolution of Cd3As2 under high pressure through magnetotransport. A sudden change in Berry phase occurs at 1.3 GPa along with the unanticipated shrinkage of the Fermi surface, which occurs well below the structure transition point (~2.5 GPa). High pressure X-ray diffraction also reveals an anisotropic compression of the Cd3As2 lattice around a similar pressure. Corroborated by the first-principles calculations we show that an axial compression will shift the Dirac nodes towards the Brillouin zone center and eventually introduces a finite energy gap. The ability to tune the node position, a vital parameter of Dirac semimetals, can have dramatic impacts on the corresponding topological properties such as the Fermi arc surface states and the chiral anomaly. Our study demonstrates axial compression as an efficient approach for manipulating the band topology and exploring the critical phenomena near the topological phase transition in Cd3As2.

cond-mat.mtrl-sci↗

arXiv2016

Bridging Medical Data Inference to Achilles Tendon Rupture Rehabilitation

Imputing incomplete medical tests and predicting patient outcomes are crucial for guiding the decision making for therapy, such as after an Achilles Tendon Rupture (ATR). We formulate the problem of data imputation and prediction for ATR relevant medical measurements into a recommender system framework. By applying MatchBox, which is a collaborative filtering approach, on a real dataset collected from 374 ATR patients, we aim at offering personalized medical data imputation and prediction. In this work, we show the feasibility of this approach and discuss potential research directions by conducting initial qualitative evaluations.

cs.LG↗

arXiv2016

Diagnostic Prediction Using Discomfort Drawings

In this paper, we explore the possibility to apply machine learning to make diagnostic predictions using discomfort drawings. A discomfort drawing is an intuitive way for patients to express discomfort and pain related symptoms. These drawings have proven to be an effective method to collect patient data and make diagnostic decisions in real-life practice. A dataset from real-world patient cases is collected for which medical experts provide diagnostic labels. Next, we extend a factorized multimodal topic model, Inter-Battery Topic Model (IBTM), to train a system that can make diagnostic predictions given an unseen discomfort drawing. Experimental results show reasonable predictions of diagnostic labels given an unseen discomfort drawing. The positive result indicates a significant potential of machine learning to be used for parts of the pain diagnostic process and to be a decision support system for physicians and other health care personnel.

cs.LG↗

arXiv2016

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2016

Room-temperature chiral charge pumping in Dirac semimetals

Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.

cond-mat.mtrl-sci↗

arXiv2016

Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2

We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by using Boltzmann transport theory. The calculated thermoelectric properties of the pristine Cd3As2 match well the experimental results. The electron or hole doping, especially the latter, is found improving much the thermoelectric behaviors of the material. The optimum merit ZT of Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020 cm-3, much larger than the maximum experimental value obtained for the pristine Cd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeck coefficient as a function of temperature increases apparently with the increase of the hole doping concentration and its position shifts drastically towards the lower temperature region compared to that of the n-type Cd3As2, leading to the optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020 cm-3) in the p-type Cd3As2.

cond-mat.mtrl-sci↗

arXiv2016

Diagnostic Prediction Using Discomfort Drawings with IBTM

In this paper, we explore the possibility to apply machine learning to make diagnostic predictions using discomfort drawings. A discomfort drawing is an intuitive way for patients to express discomfort and pain related symptoms. These drawings have proven to be an effective method to collect patient data and make diagnostic decisions in real-life practice. A dataset from real-world patient cases is collected for which medical experts provide diagnostic labels. Next, we use a factorized multimodal topic model, Inter-Battery Topic Model (IBTM), to train a system that can make diagnostic predictions given an unseen discomfort drawing. The number of output diagnostic labels is determined by using mean-shift clustering on the discomfort drawing. Experimental results show reasonable predictions of diagnostic labels given an unseen discomfort drawing. Additionally, we generate synthetic discomfort drawings with IBTM given a diagnostic label, which results in typical cases of symptoms. The positive result indicates a significant potential of machine learning to be used for parts of the pain diagnostic process and to be a decision support system for physicians and other health care personnel.

cs.LG↗

arXiv2016

Viewpoint and Topic Modeling of Current Events

There are multiple sides to every story, and while statistical topic models have been highly successful at topically summarizing the stories in corpora of text documents, they do not explicitly address the issue of learning the different sides, the viewpoints, expressed in the documents. In this paper, we show how these viewpoints can be learned completely unsupervised and represented in a human interpretable form. We use a novel approach of applying CorrLDA2 for this purpose, which learns topic-viewpoint relations that can be used to form groups of topics, where each group represents a viewpoint. A corpus of documents about the Israeli-Palestinian conflict is then used to demonstrate how a Palestinian and an Israeli viewpoint can be learned. By leveraging the magnitudes and signs of the feature weights of a linear SVM, we introduce a principled method to evaluate associations between topics and viewpoints. With this, we demonstrate, both quantitatively and qualitatively, that the learned topic groups are contextually coherent, and form consistently correct topic-viewpoint associations.

cs.CL↗

arXiv2016

Inter-Battery Topic Representation Learning

In this paper, we present the Inter-Battery Topic Model (IBTM). Our approach extends traditional topic models by learning a factorized latent variable representation. The structured representation leads to a model that marries benefits traditionally associated with a discriminative approach, such as feature selection, with those of a generative model, such as principled regularization and ability to handle missing data. The factorization is provided by representing data in terms of aligned pairs of observations as different views. This provides means for selecting a representation that separately models topics that exist in both views from the topics that are unique to a single view. This structured consolidation allows for efficient and robust inference and provides a compact and efficient representation. Learning is performed in a Bayesian fashion by maximizing a rigorous bound on the log-likelihood. Firstly, we illustrate the benefits of the model on a synthetic dataset,. The model is then evaluated in both uni- and multi-modality settings on two different classification tasks with off-the-shelf convolutional neural network (CNN) features which generate state-of-the-art results with extremely compact representations.

cs.LG↗

arXiv2016

An asymptotic formula for the zeros of the deformed exponential function

We study the asymptotic representation for the zeros of the deformed exponential function $\sum\nolimits_{n = 0}^\infty {\frac1{n!}{q^{n(n - 1)/2}{x^n}}} $, $q\in (0,1)$. Indeed, we obtain an asymptotic formula for these zeros: \[x_n=- nq^{1-n}(1 + g(q)n^{-2}+o(n^{-2})),n\ge1,\] where $g(q)=\sum\nolimits_{k = 1}^\infty {σ(k){q^k}}$ is the generating function of the sum-of-divisors function $σ(k)$. This improves earlier results by Langley and Liu. The proof of this formula is reduced to estimating the sum of an alternating series, where the Jacobi's triple product identity plays a key role.

math.CA↗

arXiv2016

Improved critical eigenfunction restriction estimates on Riemannian surfaces with nonpositive curvature

We show that one can obtain improved $L^4$ geodesic restriction estimates for eigenfunctions on compact Riemannian surfaces with nonpositive curvature. We achieve this by adapting Sogge's strategy in proving improved critical $L^p$ estimates. We first combine the improved $L^2$ restriction estimate of Blair and Sogge and the classical improved $L^\infty$ estimate of Bérard to obtain an improved weak-type $L^4$ restriction estimate. We then upgrade this weak estimate to a strong one by using the improved Lorentz space estimate of Bak and Seeger. This estimate improves the $L^4$ restriction estimate of Burq, Gérard and Tzvetkov and Hu by a power of $(\log\logλ)^{-1}$. Moreover, in the case of compact hyperbolic surfaces, we obtain further improvements in terms of $(\logλ)^{-1}$ by applying the ideas from recent works of Chen, Sogge and Blair, Sogge. We are able to compute various constants that appeared in the work of Chen and Sogge explicitly, by proving detailed oscillatory integral estimates and lifting calculations to the universal cover $\mathbb H^2$.

math.AP↗

arXiv2016

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2016

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

cond-mat.mes-hall↗

arXiv2016

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

cond-mat.mtrl-sci↗

arXiv2015

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.

cond-mat.mtrl-sci↗

arXiv2015

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci↗