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Cheng-Hua Liu

Publications and source records attributed to Cheng-Hua Liu.

3 recordsLinked to original sources

Unveiling the nonclassicality within quasi-distribution representations through deep learning

To unequivocally distinguish genuine quantumness from classicality, a widely adopted approach focuses on the negative values of a quasi-distribution representation as compelling evidence of nonclassicality. Prominent examples include the dynamical process nonclassicality characterized by the canonical Hamiltonian ensemble representation (CHER) and the nonclassicality of quantum states characterized by the Wigner function. However, to construct a multivariate joint quasi-distribution function with negative values from experimental data is typically highly cumbersome. Here we propose a computational approach utilizing a deep generative model, processing three marginals, to construct the bivariate joint quasi-distribution functions. We first apply our model to tackle the challenging problem of the CHERs, which lacks universal solutions, rendering the problem ground-truth (GT) deficient. To overcome the GT deficiency of the CHER problem, we design optimal synthetic datasets to train our model. While trained with synthetic data, the physics-informed optimization enables our model to capture the detrimental effect of the thermal fluctuations on nonclassicality, which cannot be obtained from any analytical solutions. This underscores the reliability of our approach. This approach also allows us to predict the Wigner functions subject to thermal noises. Our model predicts the Wigner functions with a prominent accuracy by processing three marginals of probability distributions. Our approach also provides a significant reduction of the experimental efforts of constructing the Wigner functions of quantum states, giving rise to an efficient alternative way to realize the quantum state tomography.

quant-ph

Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junctions

We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which greatly reduces the high mobility of intrinsic graphene. However, we show that an oxide layer only weakly perturbs the carrier transport, which enables fabrication of a high-quality graphene p-n-p junction through a one-step and resist-free method. The measured conductance-gate voltage $(G-V_G)$ curves can be well described by a metal contact model, which confirms the charge density depinning due to the oxide layer. The graphene p-n-p junction samples exhibit pronounced quantum Hall effect, a well-defined transition point of the zeroth Landau level (LL), and scaling behavior. The scaling exponent obtained from the evolution of the zeroth LL width as a function of temperature exhibits a relatively low value of $κ=0.21\pm0.01$. Moreover, we calculate the energy level for the LLs based on the distribution of plateau-plateau transition points, further validating the assignment of the LL index of the QH plateau-plateau transition.

cond-mat.mes-hall

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors

Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future.

cond-mat.mes-hall