arXiv subjects

Cheng-Ping Zhang

Publications and source records attributed to Cheng-Ping Zhang.

9 recordsLinked to original sources

arXiv2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.

cond-mat.mes-hall↗

arXiv2023

Experimental evidence for Berry curvature multipoles in antiferromagnets

Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a 2nd order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a 3rd order NLAHE, which appears as a transverse voltage response at the 3rd harmonic frequency when a longitudinal a.c. current drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte-Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials, such as moir\'e superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, that remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols.

cond-mat.mes-hall↗

arXiv2022

Nonlinear Hall Effects in Strained Twisted Bilayer WSe$_2$

Recently, it has been pointed out that the twisting of bilayer WSe$_2$ would generate topologically non-trivial flat bands near the Fermi energy. In this work, we show that twisted bilayer WSe$_2$ (tWSe$_2$) with uniaxial strain exhibits a large nonlinear Hall (NLH) response due to the non-trivial Berry curvatures of the flat bands. Moreover, the NLH effect is greatly enhanced near the topological phase transition point which can be tuned by a vertical displacement field. Importantly, the nonlinear Hall signal changes sign across the topological phase transition point and provides a way to identify the topological phase transition and probe the topological properties of the flat bands. The strong enhancement and high tunability of the NLH effect near the topological phase transition point renders tWSe$_2$ and related moire materials new platforms for rectification and second harmonic generations.

cond-mat.mes-hall↗

arXiv2022

Topological $p_x+ip_y$ inter-valley coherent state in Moir\'e MoTe$_2$/WSe$_2$ heterobilayers

Recently, a quantum anomalous Hall (QAH) state was observed in AB stacked moir\'e MoTe$_2$/WSe$_2$ heterobilayers at half-filling. More recent layer-resolved magnetic circular dichroism (MCD) measurements revealed that spin-polarized moir\'e bands from both the MoTe$_2$ and the WSe$_2$ layers are involved at the formation of the QAH state. This scenario is not expected by existing theories. In this work, we suggest that the observed QAH state is a new state of matter, namely, a topological $p_x+ip_y$ inter-valley coherent state (TIVC). We point out that the massive Dirac spectrum of the MoTe$_2$ moir\'e bands, together with the Hund's interaction and the Coulomb interactions give rise to this novel QAH state. Through a self-consistent Hartree-Fock analysis, we find a wide range of interaction strengths and displacement fields that the $p_x+ip_y$-pairing phase is energetically favourable. Besides explaining several key features of the experiments, our theory predicts that the order parameter would involve the pairing of electrons and holes with a definite momentum mismatch such that the pairing would generate a new unit cell which is three times the size of the original moir\'e unit cell, due to the order parameter modulations.

cond-mat.mtrl-sci↗

arXiv2022

Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe$_2$/WSe$_2$ Heterobilayers

Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling $ν=1$ were observed in AB stacked moiré MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial states emerge is not known. In this work, we propose that the pseudo-magnetic fields induced by lattice relaxation in moiré MoTe$_2$/WSe$_2$ heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full-filing $ν=2$, when two moiré bands with opposite Chern numbers are filled. At half-filling $ν=1$, Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically non-trivial states in heterobilayer TMD materials.

cond-mat.mes-hall↗

arXiv2021

Kramers Nodal Line Metals

Recently, it was pointed out that all chiral crystals with spin-orbit coupling (SOC) can be Kramers Weyl semimetals (KWSs) which possess Weyl points pinned at time-reversal invariant momenta. In this work, we show that all achiral non-centrosymmetric materials with SOC can be a new class of topological materials, which we term Kramers nodal line metals (KNLMs). In KNLMs, there are doubly degenerate lines, which we call Kramers nodal lines (KNLs), connecting time-reversal invariant momenta. The KNLs create two types of Fermi surfaces, namely, the spindle torus type and the octdong type. Interestingly, all the electrons on octdong Fermi surfaces are described by two-dimensional massless Dirac Hamiltonians. These materials support quantized optical conductance in thin films. We further show that KNLMs can be regarded as parent states of KWSs. Therefore, we conclude that all non-centrosymmetric metals with SOC are topological, as they can be either KWSs or KNLMs.

cond-mat.mes-hall↗

arXiv2021

Higher-Order Nonlinear Anomalous Hall Effects Induced by Berry Curvature Multipoles

In recent years, it has been shown that Berry curvature monopoles and dipoles play essential roles in the anomalous Hall effect and the nonlinear Hall effect respectively. In this work, we demonstrate that Berry curvature multipoles (the higher moments of Berry curvatures at the Fermi energy) can induce higher-order nonlinear anomalous Hall (NLAH) effect. Specifically, an AC Hall voltage perpendicular to the current direction emerges, where the frequency is an integer multiple of the frequency of the applied current. Importantly, by analyzing the symmetry properties of all the 3D and 2D magnetic point groups, we note that the quadrupole, hexapole and even higher Berry curvature moments can cause the leading-order frequency multiplication in certain materials. To provide concrete examples, we point out that the third-order NLAH voltage can be the leading-order Hall response in certain antiferromagnets due to Berry curvature quadrupoles, and the fourth-order NLAH voltage can be the leading response in the surface states of topological insulators induced by Berry curvature hexapoles. Our results are established by symmetry analysis, effective Hamiltonian and first-principles calculations. Other materials which support the higher-order NLAH effect are further proposed, including 2D antiferromagnets and ferromagnets, Weyl semimetals and twisted bilayer graphene near the quantum anomalous Hall phase.

cond-mat.mes-hall↗

arXiv2020

Giant nonlinear Hall effect in strained twisted bilayer graphene

Recent studies have shown that moiré flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the 3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moiré bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $\sim 0.1\%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $\sim$ 200Å, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moiré bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.

cond-mat.mes-hall↗

arXiv2020

Highly tunable nonlinear Hall effects induced by spin-orbit couplings in strained polar transition-metal dichalcogenides

Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1Å, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers.

cond-mat.mes-hall↗