arXiv subjects

Chenggang Tao

Publications and source records attributed to Chenggang Tao.

10 recordsLinked to original sources

arXiv2024

Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals

EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations. Defects-induced local density of states (LDOS) modification with a triangular shape helps identify the surface terminations: Eu versus AsZn surface. While large bandgaps (~1.5 eV at 77 K) are observed on both pristine surfaces, the bandgap width is found to be very sensitive to local heterogeneity, such as defects and step edges, with the tendency of reduction. Combining experimental data with DFT simulations, we conclude that the modified bandgap in the heterogeneous area arises from Zn vacancies and/or substitution by As atoms. Our investigation offers important information for reevaluating the electron topology of the EuM2As2 family.

cond-mat.mtrl-sci↗

arXiv2021

Atomic-Scale Visualization and Manipulation of Domain boundaries in 2D Ferroelectric In2Se3

Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their complexity and diversity, the internal atomic and electronic structure of domain boundaries that governs the electronic properties as well as the kinetics of domain switching remains far from being elucidated. By using scanning tunneling microscopy and spectroscopy (STM/S) combined with density functional theory (DFT) calculations, we directly visualize the atomic structure of domain boundaries in two-dimensional (2D) ferroelectric beta' In2Se3 down to the monolayer limit and reveal a double-barrier energy potential of the 60° tail to tail domain boundaries for the first time. We further controllably manipulate the domain boundaries with atomic precision by STM and show that the movements of domain boundaries can be driven by the electric field from an STM tip and proceed by the collective shifting of atoms at the domain boundaries. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials.

cond-mat.mes-hall↗

arXiv2019

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Among two-dimensional (2D) transition metal dichalcogenides (TMDs), platinum diselenide (PtSe2) stands at a unique place in the sense that it undergoes a phase transition from type-II Dirac semimetal to indirect-gap semiconductor as thickness decreases. Defects in 2D TMDs are ubiquitous and play crucial roles in understanding and tuning electronic, optical, and magnetic properties. Here we investigate intrinsic point defects in ultrathin 1T-PtSe2 layers grown on mica through the chemical vapor transport (CVT) method, using scanning tunneling microscopy and spectroscopy (STM/STS) and first-principles calculations. We observed five types of distinct defects from STM topography images and obtained the local density of states of the defects. By combining the STM results with the first-principles calculations, we identified the types and characteristics of these defects, which are Pt vacancies at the topmost and next monolayers, Se vacancies in the topmost monolayer, and Se antisites at Pt sites within the topmost monolayer. Our study shows that the Se antisite defects are the most abundant with the lowest formation energy in a Se-rich growth condition, in contrast to cases of 2D molybdenum disulfide (MoS2) family. Our findings would provide critical insight into tuning of carrier mobility, charge carrier relaxation, and electron-hole recombination rates by defect engineering or varying growth condition in few-layer 1T-PtSe2 and other related 2D materials.

cond-mat.mes-hall↗

arXiv2018

Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2

Van der Waals (vdW) heterostructures synthesized through the chemical vapor deposition (CVD) method allow creation and tuning of intriguing electronic and optical properties of two- dimensional (2D) materials, the knowledge of which is critical for a wide range of potential applications. Here we report our scanning tunneling microscopy/spectroscopy (STM/STS) study of as-grown MoS2 monolayer and WS2/MoS2 heterobilayer on SiO2. The heterobilayer appears smoother than the MoS2 monolayer, with root mean square (RMS) roughness of 0.230 +- 0.021 nm in the former and 0.329 +- 0.033 nm in the latter. For the first time, to our knowledge, we directly observed a continuous interface between the MoS2 monolayer and the top layer of the heterobilayer with atomic resolution. This finding contrasts to the previously reported open edges in the top layer of the heterobilayer. Our STS results and density functional theory (DFT) calculations revealed the band gaps of the heterobilayer and the MoS2 monolayer.

cond-mat.mes-hall↗

arXiv2017

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2

To ensure the practical application of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands on TiSe2 surfaces as a model system, for the first time we have observed a shape evolution and growth from triangular to hexagonal driven by scanning tunneling microscopy (STM) electrical stressing. The size of islands shows linear growth with a rate of (3.00 +- 0.05) x 10-3 nm/s, when the STM scanning parameters are held fixed at Vs = 1.0 V and I = 1.8 nA. We further quantified how the growth rate is related to the tunneling current magnitude. Our simulations of monolayer island evolution using phase-field modeling are in good agreement with our experimental observations, and point towards preferential edge atom dissociation under STM scanning driving the observed growth. The results could be potentially important for device applications of ultrathin transition metal dichalcogenides and related 2D materials subject to electrical stressing under device operating conditions.

cond-mat.mes-hall↗

arXiv2017

Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir2O7. The films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of Bi_Ir antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance.

cond-mat.mtrl-sci↗

arXiv2015

Temperature Evolution of Quasi-one-dimensional C60 Nanostructures on Rippled Graphene

We report the preparation of novel one-dimensional (1D) C60 nanostructures on rippled graphene. Through careful control of the subtle balance between the linear periodic potential of rippled graphene and the C60 surface mobility, we demonstrate that C60 molecules can be arranged into a 1D C60 chain structure with widths of two to three molecules. At a higher annealing temperature, the 1D chain structure transitions to a more compact hexagonal close packed quasi-1D stripe structure. This first experimental realization of 1D C60 structures on graphene may pave a way for fabricating new C60/graphene hybrid structures for future applications in electronics, spintronics and quantum information.

cond-mat.mes-hall↗

arXiv2013

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states.

cond-mat.mes-hall↗

arXiv2011

Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons

A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit a wide range of behaviour (depending on their chirality and width) that includes tunable energy gaps and the presence of unique one-dimensional (1D) edge states with unusual magnetic structure. Most GNRs explored experimentally up to now have been characterized via electrical conductivity, leaving the critical relationship between electronic structure and local atomic geometry unclear (especially at edges). Here we present a sub-nm-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of GNRs that allows us to examine how GNR electronic structure depends on the chirality of atomically well-defined GNR edges. The GNRs used here were chemically synthesized via carbon nanotube (CNT) unzipping methods that allow flexible variation of GNR width, length, chirality, and substrate. Our STS measurements reveal the presence of 1D GNR edge states whose spatial characteristics closely match theoretical expectations for GNR's of similar width and chirality. We observe width-dependent splitting in the GNR edge state energy bands, providing compelling evidence of their magnetic nature. These results confirm the novel electronic behaviour predicted for GNRs with atomically clean edges, and thus open the door to a whole new area of applications exploiting the unique magnetoelectronic properties of chiral GNRs.

cond-mat.mes-hall↗

arXiv2008

Dynamic interfaces in an organic thin film

Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence

cond-mat.mtrl-sci↗