arXiv subjects

Chengtian Lin

Publications and source records attributed to Chengtian Lin.

22 records · Page 2Linked to original sources

arXiv2014

Preparation of magnetic tips for spin-polarized STM on Fe_{1+y}Te

The interplay of electronic nematic modulations, magnetic order, superconductivity and structural distortions in strongly correlated electron materials calls for methods which allow characterizing them simultaneously - to allow establishing directly the relationship between these different phenomena. Spin-polarized STM enables studying both, electronic excitations as well as magnetic structure in the same measurement at the atomic scale. Here we demonstrate preparation of magnetic tips, both ferromagnetic and antiferromagnetic, on single crystals of FeTe. This opens up preparation of spin-polarized tips without the need for sophisticated ultra-high vacuum preparation.

cond-mat.str-el↗

arXiv2011

Reactive chemical doping of the $Bi_2 Se_3$ topological insulator

Using angle resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator $\text{Bi}_2\text{Se}_3$ as a function of water vapor exposure. We find that a surface reaction with water induces a band bending shifting the Dirac point deep into the occupied states and creating quantum well states with a strong Rashba-type splitting. The surface is thus not chemically inert, but the topological state remains protected. The band bending is traced back to Se-abstraction leaving positively charged vacancies at the surface. Due to the presence of water vapor, a similar effect takes place when $\text{Bi}_2\text{Se}_3$ crystals are left in vacuum or cleaved in air, which likely explains the aging effect observed in the $\text{Bi}_2\text{Se}_3$ band structure.

cond-mat.mes-hall↗

arXiv2010

Carrier-Concentration Dependence of the Pseudogap Ground State of Superconducting Bi2Sr2-xLaxCuO6+delta Revealed by 63,65Cu-Nuclear Magnetic Resonance in Very High Magnetic Fields

We report the results of the Knight shift by 63,65Cu-nuclear-magnetic resonance (NMR) measurements on single-layered copper-oxide Bi2Sr2-xLaxCuO6+delta conducted under very high magnetic fields up to 44 T. The magnetic field suppresses superconductivity completely and the pseudogap ground state is revealed. The 63Cu-NMR Knight shift shows that there remains a finite density of states (DOS) at the Fermi level in the zero-temperature limit, which indicates that the pseudogap ground state is a metallic state with a finite volume of Fermi surface. The residual DOS in the pseudogap ground state decreases with decreasing doping (increasing x) but remains quite large even at the vicinity of the magnetically ordered phase of x > 0.8, which suggests that the DOS plunges to zero upon approaching the Mott insulating phase.

cond-mat.supr-con↗

arXiv2009

Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy

The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations. In YBa2Cu3O6+x, similar to all other doped cuprates studied so far, a strong shift of the chemical potential at low hole doping is detected. However, the results for the inverse charge susceptibility at small x shows a large variation between different doped cuprates. The results are discussed in view of various theoretical models. None of these models turns out to be satisfactory.

cond-mat.supr-con↗