SearcharxivSearch

arXiv subjects

Chengxi Huang

Publications and source records attributed to Chengxi Huang.

5 recordsLinked to original sources

Colossal Type-II Multiferroic Polarization Driven by Collinear Spin Orders

Achieving strong magnetoelectric coupling (MEC) together with large ferroelectric polarization remains a central challenge in type-II multiferroics. In conventional spin-driven multiferroics, the induced polarization is usually mediated by spin-orbit coupling (SOC) or spin-lattice coupling (SLC). Since many representative systems are based on 3d transition-metal ions, where SOC is relatively weak and SLC-induced lattice distortions are often limited, their polarizations are typically much smaller than those of proper ferroelectrics. Moreover, electric polarizations in type-II multiferroics are generally induced by spiral spin orders stabilized by competing magnetic interactions, which often leads to relatively low magnetic transition temperatures. In this Letter, using spin-group symmetry, we propose an SOC- and SLC-independent route to MEC in collinear 3d magnetic systems. We show that, even for a noncentrosymmetric lattice structure, different collinear magnetic configurations can either forbid or allow electric polarization, indicating direct magnetic control of polarization and hence strong MEC. The first-principles calculations excluding SOC on monolayer 2H-VS2 support this picture: a collinear stripy antiferromagnetic order induces an in-plane ferroelectric polarization up to 25.00 {\mu}C/cm2, about two orders of magnitude larger than that of typical type-II multiferroics. Furthermore, our microscopic model suggests that the induced polarization originates from SOC-independent p-d hybridization governed by electronic hopping. Our results suggest a possible route toward type-II multiferroics combining strong MEC with large electronic polarization in collinear 3d magnetic systems.

cond-mat.mtrl-sci

Electric-field Switching of Interlayer Magnetic Order in a van der Waals Heterobilayer via Spin-potential Coupling

Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets due to the inherently weak interaction between spin order and electric fields. Here we propose a general spin-potential mechanism that significantly enhances the magnetoelectric coupling. As a result, the relative stability of different interlayer magnetic orders in an asymmetric van der Waals heterobilayer can be reversed by external electric fields via spin-potential coupling. Based on this mechanism, we designed a series of 2D vdW all-magnetic heterobilayers, such as CrI3/MnSe2, in which a transition from interlayer ferromagnetic (iFM) to antiferromagnetic (iAFM) order is realized by a feasible electric field around 0.1 V/{\AA}. Our findings not only reveal a novel magnetoelectric coupling mechanism, but also present a practical strategy for achieving pure electric-field-driven magnetic order switching

cond-mat.mtrl-sci

Built-in Electric-Field-Control of Magnetic Coupling in van der Waals semiconductors

Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van der Waals (vdW) 2D magnetic semiconductor via a built-in electric field generated by the adsorption of superatomic ions. Using first-principles calculations, we predict a significant enhancement of ferromagnetic (FM) coupling and a great change of magnetic anisotropy in 2D semiconductors when they are sandwiched between superatomic cations and anions. The magnetic coupling is directly affected by the built-in electric field, which lifts the energy levels of mediated ligands' orbitals and enhances the super-exchange interactions. These findings will be of interest for ionic gating controlled ferromagnets and magnetoelectronics based on vdW 2D semiconductors.

cond-mat.mtrl-sci

Discovery of Intrinsic Ferromagnetic Ferroelectricity in Transition Metal Halides Monolayer

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition metal halide systems. On the basis of first-principles calculations, we reveal that charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr-Br6 units. As an example, we further show that (CrBr3)2Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system are not only useful for fundamental research in multiferroics but also enable a wide range of applications in nano-devices.

cond-mat.mtrl-sci

Quantum anomalous Hall effect in ferromagnetic transition metal halides

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb)2Te3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that RuI3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360 K using Monte-Carlo simulation, is above room temperature and higher than most of two-dimensional ferromagnetic thin films. We also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds a new experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.

physics.comp-ph