arXiv subjects

Chengyang Xu

Publications and source records attributed to Chengyang Xu.

5 recordsLinked to original sources

arXiv2025

Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene

ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena.

cond-mat.mes-hall↗

arXiv2024

Optical manipulation of the topological phase in ZrTe5 revealed by time- and angle-resolved photoemission

High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps. This photoinduced transient strong topological phase can last longer than 2 ps at the highest excitation fluence studied, and it cannot be attributed to the photoinduced heating of electrons or modification of the conduction band filling. Additionally, the measured unoccupied electronic states are consistent with the first-principles calculation based on experimental crystal lattice constants, which favor a strong topological insulating phase. These findings provide new insights into the longstanding controversy about the strong and weak topological properties in ZrTe5, and they suggest that many-body effects including electron-electron interactions must be taken into account to understand the equilibrium weak topological insulating phase in ZrTe5.

cond-mat.mtrl-sci↗

arXiv2022

Symmetry-dependent antiferromagnetic proximity effects on valley splitting

Various physical phenomena have been discovered by tuning degrees of freedom, among which there is the degree of freedom (DOF) -- "valley". The typical valley materials are characterized by two degenerate valley states protected by time-reversal symmetry (TS). These states indexed by valley DOF have been measured and manipulated for emergent valley-contrasting physics with the broken valley degeneracy. To achieve the valley splitting resulted from TS breaking, previous studies mainly focused on magnetic proximity effect provided by ferromagnetic (FM) layer. Nevertheless, the anti-ferromagnetic (AFM) proximity effect on the valley degeneracy has never been investigated systematically. In this work, we construct the composites consisting of a transitionmetal dichalcogenide (TMD) monolayer and a proximity layer with specific intra-plane AFM configurations. We extend the three-band model to describe the valley states of such systems. It is shown that either "time-reversal + fractional translation" or "mirror" symmetry has been proved to protect valley degeneracy. Additionally, first-principles calculations based on density functional theory (DFT) have been performed to verify the results obtained from the extended tight-binding (TB) model. The TB method introduced in the present work can properly describe the low-energy physics of valley materials that couple to the proximity with complex magnetic configurations. The results expand the range of qualified proximity layers for valley splitting, enabling more flexible manipulation of valley degree.

cond-mat.mtrl-sci↗

arXiv2021

Optical manipulation of electronic dimensionality in a quantum material

Exotic phenomenon can be achieved in quantum materials by confining electronic states into two dimensions. For example, relativistic fermions are realised in a single layer of carbon atoms, the quantized Hall effect can result from two-dimensional (2D) systems, and the superconducting transition temperature can be enhanced significantly in a one-atomic-layer material. Ordinarily, 2D electronic system can be obtained by exfoliating the layered materials, growing monolayer materials on substrates, or establishing interfaces between different materials. Herein, we use femtosecond infrared laser pulses to invert the periodic lattice distortion sectionally in a three-dimensional (3D) charge density wave material, creating macroscopic domain walls of transient 2D ordered electronic states with exotic properties. The corresponding ultrafast electronic and lattice dynamics are captured by time- and angle-resolved photoemission spectroscopy and MeV ultrafast electron diffraction. Surprisingly, a novel energy gap state, which might be a signature of light-induced superconductivity, is identified in the photoinduced 2D domain wall near the surface. Such optical modulation of atomic motion is a new path to realise 2D electronic states and will be a new platform for creating novel phases in quantum materials.

cond-mat.str-el↗

arXiv2020

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of an intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computations. Although the presence of spins in open-shell nanographenes has been recently confirmed, the ability to control magnetic coupling sign has remained elusive, but the most desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins has been controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.

cond-mat.mes-hall↗