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Chengyang Yao

Publications and source records attributed to Chengyang Yao.

2 recordsLinked to original sources

RFDT-Channel: RGB-LiDAR-Based RF Digital Twin Scene Construction for 28 GHz Indoor Ray-Tracing Channel Simulation

Real-scene indoor millimeter-wave simulation requires efficient modeling of radio frequency (RF)-computable geometry and electromagnetic material properties. To address the low efficiency of manual scene modeling, the limited RF adaptability of visually reconstructed meshes, and the lack of material binding in 28 GHz ray-tracing simulation, RFDT-Channel is developed as an RF digital twin scene construction workflow based on red-green-blue (RGB) images and light detection and ranging (LiDAR) point clouds. Indoor videos and point clouds are collected by a Jetson Orin platform with LiDAR and GMSL cameras. An initial triangular mesh is generated through COLMAP, 3D Gaussian Splatting, and SuGaR. The LiDAR point cloud then provides geometric and scale references for RF-oriented regularization in Blender, including alignment, wall solidification, door/window opening construction, and topology repair. OpenScene semantic segmentation maps major indoor structures to concrete, glass, wood, and metal materials, and Sionna RT performs 28 GHz ray tracing. Under a fixed transmitter-receiver deployment, the generated channel impulse response (CIR), channel frequency response (CFR), and Radio Map results show that material binding mainly changes weak reflection, transmission, and scattering paths, reducing the number of effective paths from about 742 to about 52 while keeping the dominant path amplitude nearly unchanged.

eess.IV

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to achieve sub-ns, and ~fJ write operation when integrated with CMOS access transistors. In this paper, a 2T-1MTJ cell-level modeling framework for in-plane type Y SOT-MRAM suggests that high spin Hall conductivity and moderate SOT material sheet resistance are preferred. We benchmark write energy and speed performances of type Y SOT cells based on various SOT materials experimentally reported in the literature, including heavy metals, topological insulators and semimetals. We then carry out detailed benchmarking of SOT material Pt, beta-W, and BixSe(1-x) with different thickness and resistivity. We further discuss how our 2T-1MTJ model can be expanded to analyze other variations of SOT-MRAM, including perpendicular (type Z) and type X SOT-MRAM, two-terminal SOT-MRAM, as well as spin-transfer-torque (STT) and voltage-controlled magnetic anisotropy (VCMA)-assisted SOT-MRAM. This work will provide essential guidelines for SOT-MRAM materials, devices, and circuits research in the future.

physics.app-ph