arXiv subjects

Chengyu Zhu

Publications and source records attributed to Chengyu Zhu.

4 recordsLinked to original sources

arXiv2026

Mechanically Exfoliated Metallic Delafossite PdCoO2 Nanomembranes: Quantum Transport and Electrical Evaluation Toward Interconnect Applications

Metallic delafossite oxides have drawn attention for their ultralow resistivity and coherent electronic transport. However, mesoscopic transport studies are hindered by the limited access to high quality nanoscale devices. Here, we report single crystalline PdCoO2 nanomembranes, enabling exploration of quasi two dimensional (2D) transport. Shubnikov de Haas and Aharonov Bohm oscillations under different magnetic field orientations are observed at low temperatures, from which the electron effective mass and electron phase coherence length are extracted. Beyond quantum transport, the electrical performance of PdCoO2 toward interconnect applications is evaluated. A nearly thickness independent room temperature resistivity is observed for flakes down to 40 nm thickness. The nanomembranes exhibit a breakdown current density up to 113 MA cm-2, with excellent thermal stability and electromigration resistance. These results demonstrate that mechanically exfoliated PdCoO2 flakes preserve the high crystalline and electronic quality of bulk crystals in the quasi-2D limit, providing a useful platform for mesoscopic transport studies and interconnect applications.

cond-mat.mes-hall↗

arXiv2026

Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs

We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO$_2$ gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm$^2$/V$\cdot$s, an on-state current up to 194 mA/mm, an on/off current ratio above $10^8$, and a contact resistance of 0.66 $\Omega\cdot$mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO$_3$ as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.

cond-mat.mtrl-sci↗

arXiv2025

SetupKit: Efficient Multi-Corner Setup/Hold Time Characterization Using Bias-Enhanced Interpolation and Active Learning

Accurate setup/hold time characterization is crucial for modern chip timing closure, but its reliance on potentially millions of SPICE simulations across diverse process-voltagetemperature (PVT) corners creates a major bottleneck, often lasting weeks or months. Existing methods suffer from slow search convergence and inefficient exploration, especially in the multi-corner setting. We introduce SetupKit, a novel framework designed to break this bottleneck using statistical intelligence, circuit analysis and active learning (AL). SetupKit integrates three key innovations: BEIRA, a bias-enhanced interpolation search derived from statistical error modeling to accelerate convergence by overcoming stagnation issues, initial search interval estimation by circuit analysis and AL strategy using Gaussian Process. This AL component intelligently learns PVT-timing correlations, actively guiding the expensive simulations to the most informative corners, thus minimizing redundancy in multicorner characterization. Evaluated on industrial 22nm standard cells across 16 PVT corners, SetupKit demonstrates a significant 2.4x overall CPU time reduction (from 720 to 290 days on a single core) compared to standard practices, drastically cutting characterization time. SetupKit offers a principled, learningbased approach to library characterization, addressing a critical EDA challenge and paving the way for more intelligent simulation management.

cs.AR↗

arXiv2025

High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors

The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room-temperature electron mobilities among all perovskite oxides. Among this family, Calcium stannate (CaSnO3) has the largest band gap of ~4.7 eV, holding great promise for high-power applications. However, the demonstration of CaSnO3 power electronic devices is so far limited. In this work, high-performance metal-oxide-semiconductor field-effect transistor (MOSFET) devices based on La-doped CaSnO3 are demonstrated for the first time. The MOSFETs exhibit an on/off ratio exceeding 10^8, along with field-effect mobility of 8.4 cm2 V-1 s-1 and on-state current of 30 mA mm-1. The high performance of the CaSnO3 MOSFET devices can be ascribed to the excellent metal-to-semiconductor contact resistance of 0.73 k{\Omega}{\mu}m. The devices also show great potential for harsh environment operations, as high-temperature operations up to 400 K have been demonstrated. An off-state breakdown voltage of 1660 V is achieved, with a breakdown field of ~8.3 MV cm-1 among the highest reported for all UWB semiconductors. This work represents significant progress toward realizing the practical application of CaSnO3 in future high-voltage power electronic technologies.

cond-mat.mtrl-sci↗