arXiv subjects

Chenqiang Hua

Publications and source records attributed to Chenqiang Hua.

13 recordsLinked to original sources

arXiv2025

Observation of multiple surface states in naturally cleavable chiral crystal PdSbSe

Chiral multifold fermions in solids exhibit unique band structures and topological properties, making them ideal for exploring fundamental physical phenomena related to nontrivial topology, chirality, and symmetry breaking. However, the challenge of obtaining clean, flat surfaces through cleavage has hindered the investigation of their unique electronic states. In this study, we utilize high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations to investigate the low-energy electronic structure of the cleavable single-crystal PdSbSe. Our combined experimental and theoretical analysis reveals the presence of multifold degenerate fermions within this chiral crystal. We also observe multiple chiral Fermi arc surface states and spin-splitting behavior in the associated bulk bands. These findings provide unique insights into chiral, multifold fermionic states in easily cleavable crystals and offer a robust platform for further research into their unique electronic properties and potential applications in novel electronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological material to host a large number of one-dimensional topological edge channels utilizing surface anisotropy. Taking ZrTe5 as a model system, we realize a highly anisotropic surface due to the synergistic effect of the lattice geometry and Coulomb interaction, and achieve massive one-dimensional topological edge channels -- confirmed by electronic characterization using angle-resolved photoemission spectroscopy, in combination with first-principles calculations. Our work provides a new avenue to engineer the topological properties of three-dimensional materials through nanoscale tunning of surface morphology and opens up a promising prospect for the development of low-power-consumption electronic nano devices based on one-dimensional topological edge channels.

cond-mat.mes-hall↗

arXiv2023

Unlocking Hidden Spins in Centrosymmetric SnSe2 by Vacancy-Controlled Spin-Orbit Scattering

Spin current generation and manipulation remain the key challenge of spintronics, in which relativistic spinorbit coupling (SOC) play a ubiquitous role. In this letter, we demonstrate that hidden Rashba spins in the non-magnetic, centrosymmetric lattice of multilayer SnSe2 can be efficiently activated by spin-orbit scattering introduced by Se vacancies. Via vacancy scattering, conduction electrons with hidden spin-momentum locked polarizations acquire out-of-plane magnetization components, which effectively break the chiral symmetry between the two Se sublattices of an SnSe2 monolayer when electron spins start precession in the strong built-in Rashba SOC field. The resulting spin separations are manifested in quantum transport as vacancy concentrationand temperature-dependent crossovers from weak antilocalization (WAL) to weak localization (WL), with the distinctive spin relaxation mechanism of the Dyakonov-Perel type. Our study shows the great potential of twodimensional systems with hidden-spin textures for spintronics.

cond-mat.mes-hall↗

arXiv2022

High-yield production of quantum corrals in a surface reconstruction pattern

The power of surface chemistry to create atomically precise nanoarchitectures offers intriguing opportunities to advance the field of quantum technology. Strategies for building artificial electronic lattices by individually positioning atoms or molecules result in precisely tailored structures but lack structural robustness. Here, taking the advantage of strong bonding of Br atoms on noble metal surfaces, we report the production of stable quantum corrals by dehalogenation of hexabromobenzene molecules on a preheated Au(111) surface. The byproducts, Br adatoms, are confined within a new surface reconstruction pattern and aggregate into nanopores with an average size of 3.7+-0.1 nm, which create atomic orbital-like quantum resonance states inside each corral due to the interference of scattered electron waves. Remarkably, the atomic orbitals can be hybridized into molecular-like orbitals with distinct bonding and anti-bonding states. Our study opens up an avenue to fabricate quantum structures with high yield and superior robustness.

cond-mat.mtrl-sci↗

arXiv2022

Direct observation of topological surface state in the topological superconductor 2M-WS2

The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e2/h. Recently, 2M-WS2, a new stable phase of transition metal dichalcogenides with a 2M structure showing an identical layer configuration to that of the monolayer 1T' TMDs, was suggested to be a QSH insulator as well as a superconductor with critical transition temperature around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS2. The TSS exhibits characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z2 topological states therein. We expect that 2M-WS2 with co-existing superconductivity and TSS might host the promising Majorana bound states.

cond-mat.supr-con↗

arXiv2021

Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping

The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored. Here, using angle- and temperature-dependent tunnelling magnetoresistance, we report unprecedented metamagnetic phase transitions in atomically-thin CrOCl, triggered by magnetic easy-axis flipping instead of the conventional spin flop mechanism. Few-layer CrOCl tunnelling devices of various thicknesses consistently show an in-plane antiferromagnetic (AFM) ground state with the easy axis aligned along the Cr-O-Cr direction (b-axis). Strikingly, with the presence of a magnetic field perpendicular to the easy-axis (H||c), magnetization of CrOCl does not follow the prevalent spin rotation and saturation pattern, but rather exhibits an easy-axis flipping from the in-plane to out-of-plane directions. Such magnetic anisotropy controlled metamagnetic phase transitions are manifested by a drastic upturn in tun- nelling current, which shows anomalous shifts towards higher H when temperature increases. By 2D mapping of tunnelling currents as a function of both temperature and H, we determine a unique ferrimagnetic state with a superstructure periodicity of five unit cells after the field-induced metam- agnetic transitions. The feasibility to control 2D magnetism by manipulating magnetic anisotropy may open enormous opportunities in spin-based device applications.

cond-mat.str-el↗

arXiv2021

Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling

The topological nodal-line semimetals (NLSMs) possess a loop of Dirac nodes in the k space with linear dispersion, different from the point nodes in Dirac/Weyl semimetals. While the quantum transport associated with the topologically nontrivial Dirac fermions has been investigated extensively, features uniquely associated with the extended nodal lines remain to be demonstrated. Here, we investigate the quantum oscillations (QOs) in the nodal-line semimetal ZrSiS, with the electron transport along the c axis, and magnetic field rotating in the ab plane. The extremal orbits identified through the field orientation dependence of the QOs interlock with the nodal line, leading to a nonzero Berry phase. Most importantly, the Berry phase shows a significant dependence on the magnetic field orientation, which we argue to be due to the finite spin-orbit coupling gap. Our results demonstrate the importance of the spin-orbit coupling and the nodal-line dispersion in understanding the quantum transport of NLSMs.

cond-mat.mtrl-sci↗

arXiv2020

Doping-induced superconductivity in the topological semimetal Mo5Si3

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo$_{5}$Si$_{3}$ with a tetragonal structure. Partial substitution of Re for Mo in Mo$_{5-x}$Re$_{x}$Si$_{3}$ results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately $x$ = 2. Over a wide doping range (0.5 $\leq$ $x$ $\leq$ 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. $T_{\rm c}$ increases monotonically with $x$ from 1.67 K to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in $T_{\rm c}$ correlates well with the variation of the number of valence electrons, and is mainly ascribed to the enhancement of electron-phonon coupling. In addition, band structure calculations reveal that superconducting Mo$_{5-x}$Re$_{x}$Si$_{3}$ exhibits nontrivial band topology characterized by $Z_{2}$ invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.

cond-mat.supr-con↗

arXiv2020

Manipulating Giant Rashba Valley Splitting and Quantum Hall States in Few-Layer Black Arsenic by Electrostatic Gating

Exciting phenomena may emerge in non-centrosymmetric two-dimensional (2D) electronic systems when spin-orbit coupling (SOC) interplays dynamically with Coulomb interactions, band topology, and external modulating forces, etc. Here, we report illuminating synergetic effects between SOC and Stark in centrosymmetric few-layer black arsenic (BAs), manifested as giant Rashba valley splitting and exotic quantum Hall states (QHS) reversibly controlled by electrostatic gating. The unusual finding is rooted in the puckering square lattice of BAs, in which heavy $4p$ orbitals form highly asymmetric $Γ$ valley with the $p_{z}$ symmetry and $D$ valleys of the $p_{x}$ origin, located at the Brillouin zone (BZ) center and near the time reversal invariant momenta of $X$, respectively. When the structure inversion symmetry is broken by perpendicular electric field, giant Rashba SOC is activated for the $p_{x}$ bands to produce strong spin-polarized $D^{+}$ and $D^{-}$ valleys related by time-reversal symmetry, coexisting with weak $Γ$ Rashba bands constrained by the $p_{z}$ symmetry. Intriguingly, strong Stark effect shows the same $p_{x}$-orbital selectiveness for $D$, collectively shifting the valence band maximum of $D^{\pm}$ valleys to exceed the $Γ$ pockets. Such an orchestrating effect between SOC and Stark allows us to realize gate-tunable spin valley manipulations for 2D hole gas, as revealed by unconventional magnetic field triggered even-to-odd transitions in QHS. For electron doping, the quantization of the $Γ$ Rashba bands is characterized by peculiar density-dependent transitions in band topology from two parabolic valleys to a unique inner-outer helical structure when charge carrier concentrations increase.

cond-mat.mes-hall↗

arXiv2020

Tunable Topological Energy Bands in 2D Dialkali-Metal Monoxides

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that monolayer (ML) dialkali-metal monoxides, in the well-known 2H-MoS$_2$ type lattice, host multiple symmetry-protected topological phases with emergent fermions, which can be effectively tuned by strain engineering. Based on first-principles calculations, it is found that in the equilibrium state, ML Na$_2$O is a 2D double Weyl semimetal, while ML K$_2$O is a 2D pseudospin-1 metal. These exotic topological states exhibit a range of fascinating effects, including universal optical absorbance, super Klein tunneling, and super collimation effect. By introducing biaxial or uniaxial strain, a series of quantum phase transitions between 2D double Weyl semimetal, 2D Dirac semimetal, 2D pseudospin-1 metal, and semiconductor phases can be realized. The results suggest monolayer dialkali-metal monoxides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent fermions.

cond-mat.mes-hall↗

arXiv2018

Pressure-induced superconductivity in topological semimetal NbAs2

Topological superconductivity with Majorana bound states, which are critical to implement nonabelian quantum computation, may be realized in three-dimensional semimetals with nontrivial topological feature, when superconducting transition occurs in the bulk. Here, we report pressure-induced superconductivity in a transition-metal dipnictide NbAs2. The emergence of superconductivity is not accompanied by any structural phase transition up to the maximum experimental pressure of 29.8 GPa, as supported by pressure-dependent synchrotron X-ray diffraction and Raman spectroscopy. Intriguingly, the Raman study reveals rapid phonon mode hardening and broadening above 10 GPa, in coincident with the superconducting transition. Using first principle calculations, we determine Fermi surface change induced by pressure, which steadily increases the density of states without breaking the electron-hole compensation. Noticeably, the main hole pocket of NbAs2 encloses one time-reversal-invariant momenta of the monoclinic lattice, suggesting NbAs2 as a candidate of topological superconductors.

cond-mat.supr-con↗

arXiv2018

Dialkali-Metal Monochalcogenide Semiconductors with High Mobility and Tunable Magnetism

The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, atomically thin transition-metal chalcogenides, and few-layer black phosphorous in the past decade. Here, we report a new, large family of semiconducting dialkali-metal monochalcogenides (DMMCs) with an inherent A$_{2}$X monolayer structure, in which two alkali sub-monolayers form hexagonal close packing and sandwich the triangular chalcogen atomic plane. Such unique lattice structure leads to extraordinary physical properties, such as good dynamical and thermal stability, visible to near-infrared light energy gap, high electron mobility (e.g. $1.87\times10^{4}$ cm$^{2}$V$^{-1}$S$^{-1}$ in K$_{2}$O). Most strikingly, DMMC monolayers (MLs) host extended van Hove singularities near the valence band (VB) edge, which can be readily accessed by moderate hole doping of $\sim1.0\times10^{13}$ cm$^{-2}$. Once the critical points are reached, DMMC MLs undergo spontaneous ferromagnetic transition when the top VBs become fully spin-polarized by strong exchange interactions. Such gate tunable magnetism in DMMC MLs are promising for exploring novel device concepts in spintronics, electronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2017

Defects controlled hole doping and multi-valley transport in SnSe single crystals

SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \textit{ZT} in SnSe. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole doping mechanism in SnSe is still absent. Here, we report the highly anisotropic electronic structure of SnSe investigated by both angle-resolved photoemission spectroscopy and quantum transport, in which a unique "\textit{pudding-mold}" shaped valence band with quasi-linear energy dispersion is revealed. We prove that the electrical doping in SnSe is extrinsically controlled by the formation of SnSe$_{2}$ micro-domains induced by local phase segregation. Using different growth methods and conditions, we have achieved wide tuning of hole doping in SnSe, ranging from intrinsic semiconducting behaviour to typical metal with carrier density of $1.23\times 10^{18}$ cm$^{-3}$ at room temperature. The resulting multi-valley transport in $p$-SnSe is characterized by non-saturating weak localization along the armchair axis, due to strong intervalley scattering enhanced by in-plane ferroelectric dipole field of the puckering lattice. Strikingly, quantum oscillations of magnetoresistance reveal three-dimensional electronic structure with unusual interlayer coupling strength in $p$-SnSe, which is correlated to the interweaving of SnSe individual layers by unique point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

cond-mat.mtrl-sci↗