arXiv subjects

Chi Xu

Publications and source records attributed to Chi Xu.

At least 55 records · Page 3Linked to original sources

arXiv2020

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 μm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 μm. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 μm and 1.55 μm, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature.

physics.app-ph↗

arXiv2020

Learning to Dispatch for Job Shop Scheduling via Deep Reinforcement Learning

Priority dispatching rule (PDR) is widely used for solving real-world Job-shop scheduling problem (JSSP). However, the design of effective PDRs is a tedious task, requiring a myriad of specialized knowledge and often delivering limited performance. In this paper, we propose to automatically learn PDRs via an end-to-end deep reinforcement learning agent. We exploit the disjunctive graph representation of JSSP, and propose a Graph Neural Network based scheme to embed the states encountered during solving. The resulting policy network is size-agnostic, effectively enabling generalization on large-scale instances. Experiments show that the agent can learn high-quality PDRs from scratch with elementary raw features, and demonstrates strong performance against the best existing PDRs. The learned policies also perform well on much larger instances that are unseen in training.

cs.LG↗

arXiv2020

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.

cond-mat.mtrl-sci↗

arXiv2020

Direct-Current Generator Based on Dynamic Water-Semiconductor Junction with Polarized Water as Moving Dielectric Medium

There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.

physics.app-ph↗

arXiv2020

Polarization Human Shape and Pose Dataset

Polarization images are known to be able to capture polarized reflected lights that preserve rich geometric cues of an object, which has motivated its recent applications in reconstructing detailed surface normal of the objects of interest. Meanwhile, inspired by the recent breakthroughs in human shape estimation from a single color image, we attempt to investigate the new question of whether the geometric cues from polarization camera could be leveraged in estimating detailed human body shapes. This has led to the curation of Polarization Human Shape and Pose Dataset (PHSPD), our home-grown polarization image dataset of various human shapes and poses.

cs.CV↗

arXiv2020

3D Human Shape Reconstruction from a Polarization Image

This paper tackles the problem of estimating 3D body shape of clothed humans from single polarized 2D images, i.e. polarization images. Polarization images are known to be able to capture polarized reflected lights that preserve rich geometric cues of an object, which has motivated its recent applications in reconstructing surface normal of the objects of interest. Inspired by the recent advances in human shape estimation from single color images, in this paper, we attempt at estimating human body shapes by leveraging the geometric cues from single polarization images. A dedicated two-stage deep learning approach, SfP, is proposed: given a polarization image, stage one aims at inferring the fined-detailed body surface normal; stage two gears to reconstruct the 3D body shape of clothing details. Empirical evaluations on a synthetic dataset (SURREAL) as well as a real-world dataset (PHSPD) demonstrate the qualitative and quantitative performance of our approach in estimating human poses and shapes. This indicates polarization camera is a promising alternative to the more conventional color or depth imaging for human shape estimation. Further, normal maps inferred from polarization imaging play a significant role in accurately recovering the body shapes of clothed people.

cs.CV↗

arXiv2020

Discovering Protagonist of Sentiment with Aspect Reconstructed Capsule Network

Most recent existing aspect-term level sentiment analysis (ATSA) approaches combined various neural network models with delicately carved attention mechanisms built upon given aspect and context to generate refined sentence representations for better predictions. In these methods, aspect terms are always provided in both training and testing process which may degrade aspect-level analysis into sentence-level prediction. However, the annotated aspect term might be unavailable in real-world scenarios which may challenge the applicability of the existing methods. In this paper, we aim to improve ATSA by discovering the potential aspect terms of the predicted sentiment polarity when the aspect terms of a test sentence are unknown. We access this goal by proposing a capsule network based model named CAPSAR. In CAPSAR, sentiment categories are denoted by capsules and aspect term information is injected into sentiment capsules through a sentiment-aspect reconstruction procedure during the training. As a result, coherent patterns between aspects and sentimental expressions are encapsulated by these sentiment capsules. Experiments on three widely used benchmarks demonstrate these patterns have potential in exploring aspect terms from test sentence when only feeding the sentence to the model. Meanwhile, the proposed CAPSAR can clearly outperform SOTA methods in standard ATSA tasks.

cs.CL↗

arXiv2019

p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy.

cond-mat.mtrl-sci↗

arXiv2019

Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors

A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.

cond-mat.mtrl-sci↗

arXiv2019

Measuring the frequency response of optically pumped metal-clad nanolasers

We report on our initial attempt to characterize the intrinsic frequency response of metal-clad nanolasers. The probed nanolaser is optically biased and modulated, allowing the emitted signal to be detected using a high-speed photodiode at each modulation frequency. Based on this technique, the prospect of high-speed operation of nanolasers is evaluated by measuring the D-factor, which is the ratio of the resonance frequency to the square root of its output power (fR/P_out^2). Our measurements show that for nanolasers, this factor is an order of magnitude greater than that of other state-of-the-art directly modulated semiconductor lasers. The theoretical analysis, based on the rate equation model and finite element method simulations of the cavity is in full agreement with the measurement results.

physics.optics↗

arXiv2019

Study on the spectral reconstruction of typical surface types based on spectral library and principal component analysis

To meet the demanding of spectral reconstruction in the visible and near-infrared wavelength, the spectral reconstruction method for typical surface types is discussed based on the USGS /ASTER spectral library and principal component analysis (PCA). A new spectral reconstructed model is proposed by the information of several typical bands instead of all of the wavelength bands, and a linear combination spectral reconstruction model is also discussed. By selecting 4 typical spectral datasets including green vegetation, bare soil, rangeland and concrete in the spectral range of 400-900 nm, the PCA results show that 6 principal components could characterized the spectral dataset, and the relative reconstructed errors are smaller than 2%. If only 6-7 selected typical bands are employed to spectral reconstruction for all the surface reflectance in 400-900 nm, except that the reconstructed error of green vegetation is about 3.3%, the relative errors of other 3 datasets are all smaller than 1.6%. The correlation coefficients of those 4 datasets are all larger than 0.99, which can effectively satisfy the needs of spectral reconstruction. In addition, based on the spectral library and the linear combination model of 4 common used bands of satellite remote sensing such as 490, 555, 670 and 865 nm, the reconstructed errors are smaller than 8.5% in high reflectance region and smaller than 1.5% in low reflectance region respectively, which basically meet the needs of spectral reconstruction. This study can provide a reference value for the surface reflectance processing and spectral reconstruction in satellite remote sensing research.

eess.IV↗

arXiv2019

Mid-infrared (3-8 μm) $\text{Ge}_{1-y}\text{Sn}_y$ alloys (0.15 < $y$ < 0.30): synthesis, structural, and optical properties

$\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth temperatures as high as 290 $^{\circ}$C. The films show structural properties that are consistent with results from earlier materials with much lower Sn concentrations. These include the lattice parameter and the Ge-Ge Raman frequency, which are found to depend linearly on composition. The simplicity of the structures, directly grown on Si, makes it possible to carry out detailed optical studies. Sharp absorption edges are found, reaching 8 $μ$m near $y$ =0.3. The compositional dependence of edge energies shows a cubic deviation from the standard quadratic alloy expression. The cubic term may dramatically impact the ability of the alloys to cover the long-wavelength (8-12 $μ$m) mid-IR atmospheric window.

cond-mat.mtrl-sci↗

arXiv2018

Nematicity of correlated systems driven by anisotropic chemical phase separation

The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems.

cond-mat.mtrl-sci↗

arXiv2018

Breaking the doping limit in silicon by deep impurities

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2018

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.

cond-mat.mtrl-sci↗

arXiv2018

Defect-induced exchange bias in a single SrRuO3 layer

Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

cond-mat.mtrl-sci↗

arXiv2018

Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature

Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.

cond-mat.mtrl-sci↗

arXiv2018

Tunable disorder and localization in the rare-earth nickelates

The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irradiation fluence as a tuning handle, we uncover an intermediate region hosting a metal-insulator transition. This transition falls within the Mott-Ioffe-Regel regime wherein the mean free path is comparable to lattice spacing. In the high temperature metallic regime, we find a transition from non-Fermi liquid to a Fermi-liquid-like character. On the insulating side of the metal-insulator transition, we find behaviour that is consistent with weak localization. This is reflected in magnetoresistance that scales with the square of the field and in resistivity. In the highly irradiated insulating samples, we find good agreement with variable range hopping, consistent with Anderson localization. We find qualitatively similar behaviour in thick PrNiO3 films as well. Our results demonstrate that ion irradiation can be used to tailor transport, serving as an excellent tool to study the physics of localization.

cond-mat.mtrl-sci↗