arXiv subjects

Chia-Seng Chang

Publications and source records attributed to Chia-Seng Chang.

13 recordsLinked to original sources

arXiv2025

Direct Visualization of a Disorder Driven Electronic Smectic Phase in Nonsymmorphic Square-Net Semimetal GdSbTe

Electronic liquid crystal (ELC) phases are spontaneous symmetry breaking states believed to arise from strong electron correlation in quantum materials such as cuprates and iron pnictides. Here, we report a direct observation of a smectic phase in a weakly correlated nonsymmorphic square-net semimetal GdSbxTe2-x. Incommensurate smectic charge modulation and intense local unidirectional nanostructure, which coexist with Dirac fermions across Fermi level, are visualized by using spectroscopic imaging - scanning tunneling microscopy. As materials with highly mobile carriers are mostly weakly correlated, the discovery of such an ELC phase are anomalous and raise questions on the origin of their emergence. Specifically, we demonstrate how chemical substitution generates these symmetry breaking phases before the system undergoes a charge density wave (CDW) - orthorhombic structural transition. Our results highlight the importance of impurities in realizing ELC phases and present a new material platform for exploring the interplay among quenched disorder, Dirac fermions and electron correlation.

cond-mat.str-el↗

arXiv2025

A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure

Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms, thus can be used to tailor or create new functionalities in material systems. In this study, a 2-dimensional transition metal oxide monolayer is constructed inside complex oxide heterostructures based on the theoretical predictions. The electrostatic boundary conditions of oxide monolayer in the heterostructure is carefully designed to tune the chemical, electronic, and magnetic states of oxide monolayer. The challenge of characterizing such an oxide monolayer is overcome by a combination of transmission electron microscopy, x-ray absorption spectroscopy, cross-sectional scanning tunneling microscopy, and electrical transport measurements. An intriguing metal-insulator transition associated with a magnetic transition is discovered in the MnO2 monolayer. This study paves a new route to understand the confinement of dimensionality and explore new intriguing phenomena in condensed matters.

cond-mat.mtrl-sci↗

arXiv2023

Design and performance of an ultrahigh vacuum spectroscopic-imaging scanning tunneling microscope with a hybrid vibration isolation system

A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance, low vibration facility is required. Here, we describe the design and the performance of an ultrahigh vacuum STM system supported by a hybrid vibration isolation system that consists of a pneumatic passive and a piezoelectric active vibration isolation stages. The STM system is equipped with a 1K pot cryogenic insert and a 9 Tesla superconducting magnet, capable of continuous SI-STM measurements for 7 days. A field ion microscopy system is installed for in situ STM tip treatment. We present the detailed vibrational noise analysis of the hybrid vibration isolation system and demonstrate the performance of our STM system by taking high resolution spectroscopic maps and topographic images on several quantum materials. Our results establish a new strategy to achieve an effective vibration isolation system for high-resolution STM and other scanning probe microscopy to investigate the nanoscale quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2023

Triplet State and Auger-Type Excitation Originating from Two-Electron Tunneling in Field Emission Resonance on Ag(100)

In this study, we discovered that the energy gap above the vacuum level in the projected bulk band structure of Ag(100) prevents electrons in the first-order field emission resonance (FER) from inducing the surface plasmons. This mechanism allows light emission from FER to reveal characteristics of triplet states and Auger-type excitation resulting from two-electron tunneling in FER. According to optical spectra, surface plasmons can be induced by electrons in the zeroth-order FER. However, corresponding radiative decay can also trigger Auger-type excitation, whose energy state is influenced by the sharpness-dependent image potential acting on the scanning tunneling microscope tip.

cond-mat.mes-hall↗

arXiv2020

Impact of Band Structure on Wave Function Dissipation in Field Emission Resonance

We demonstrated on Ag(111) and Ag(100) surfaces that the reciprocal of the field emission resonance (FER) linewidth, which is proportional to the mean lifetime of resonant electrons in FER, may vary with the electric field. The variation on Ag(111) was nearly smooth, whereas that on Ag(100) was sporadic and fluctuated remarkably. This drastic difference can be explained through their dissimilar projected bulk band structures and the ensemble interpretation of quantum mechanics, according to which all resonant electrons are governed by a single wave function. Ag(100) has an energy gap above its vacuum level, whereas Ag(111) does not. Consequently, the dissipation rate of the wave function, which is relevant to the FER linewidth, on Ag(111) was almost stable, whereas that on Ag(100) fluctuated. The fluctuation revealed that the quantum trapping effect and surface dipole layer on Ag(100) surface can be investigated through FER.

cond-mat.mtrl-sci↗

arXiv2019

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide

Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to developing ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselenide(WSe2) relative to bulk WSe2 shows substantial differences in the transient response as measured by time- and angle-resolved photoemission spectroscopy (TRARPES). The conduction-band minimum in bulk WSe2, populated by optical pumping, decays promptly. The corresponding decay for SL WSe2 is much slower and exhibits two time constants. The results indicate the presence of two distinct decay channels in the SL that are correlated with the breaking of space inversion symmetry in the two-dimensional limit. This symmetry breaking lifts the spin degeneracy of the bands, which in turn causes the blockage of decay for one spin channel. The stark contrast between the single layer and the bulk illustrates the basic carrier scattering processes operating at different timescales that can be substantially modified by dimensional and symmetry-reduction effects.

cond-mat.mtrl-sci↗

arXiv2019

Quantum Trapping on MoS2 through Lifetimes of Resonant Electrons: Revealing Pauli Exclusion Principle

We demonstrate that the linewidth of the field emission resonance (FER) observed on the surface of MoS2 using scanning tunneling microscopy can vary by up to one order of magnitude with an increase in the electric field. This unusual phenomenon originates from quantum trapping, where the electron relaxed from the resonant electron in the FER is momentarily trapped in the potential well on the MoS2 surface. Because the relaxed electron and the resonant electron have the same spin and the action of the Pauli exclusion principle, the lifetimes of the resonant electrons can be substantially prolonged when the relaxed electrons engage in the resonance trapping. The linewidth of the FER is thus shrunk considerably to as narrow as 12 meV. Moreover, it was found that the valley intensities around the FER are zero, indicating that MoS2 has an energy gap above the vacuum level. By using the energies of FERs, the potential of the band bending in the MoS2 interior can be measured precisely.

cond-mat.mes-hall↗

arXiv2018

The design and the performance of an ultrahigh vacuum 3He fridge-based scanning tunneling microscope with a double deck sample stage for in-situ tip treatment

Scanning tunneling microscope (STM) is a powerful tool for studying the structural and electronic properties of materials at the atomic scale. The combination of low temperature and high magnetic field for STM and related spectroscopy techniques allows us to investigate the novel physical properties of materials at these extreme conditions with high energy resolution. Here, we present the construction and the performance of an ultrahigh vacuum 3He fridge-based STM system with a 7 Tesla superconducting magnet. It features a double deck sample stage on the STM head so we can clean the tip by field emission or prepare a spin-polarized tip in situ without removing the sample from the STM. It is also capable of in situ sample and tip exchange and preparation. The energy resolution of scanning tunneling spectroscopy at T = 310 mK is determined to be 400 mK by measuring the superconducting gap with a niobium tip on a gold surface. We demonstrate the performance of this STM system by imaging the bicollinear magnetic order of $Fe_{1+x}Te$ at T=5K.

cond-mat.mtrl-sci↗

arXiv2018

Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS

Dirac nodal line semimetals represent a new state of quantum matters in which the electronic bands touch to form a closed loop with linear dispersion. Here, we report a combined study on ZrSiS by density functional theory calculation, scanning tunneling microscope (STM) and magneto-transport measurements. Our STM measurements reveal the spectroscopic signatures of a diamond-shaped Dirac bulk band and a surface band on two types of cleaved surfaces as well as a spin polarized surface band at ${\barΓ}$ at E~0.6eV on S-surface, consistent with our band calculation. Furthermore, we find the surface termination does not affect the surface spectral weight from the Dirac bulk bands but greatly affect the surface bands due to the change in the surface orbital composition. From our magneto-transport measurements, the primary Shubnikov de-Haas frequency is identified to stem from the hole-type quasi-two-dimensional Fermi surface between Γ and X. The extracted non-orbital magnetoresistance (MR) contribution D($θ$, H) yields a nearly H-linear dependence, which is attributed to the intrinsic MR in ZrSiS. Our results demonstrate the unique Dirac line nodes phase and the dominating role of Zr-d orbital on the electronic structure in ZrSiS and the related compounds.

cond-mat.mtrl-sci↗

arXiv2016

Superconducting Topological Surface States in Non-centrosymmetric Bulk Superconductor PbTaSe2

The search for topological superconductors (TSCs) is one of the most urgent contemporary problems in condensed matter systems. TSCs are characterized by a full superconducting gap in the bulk and topologically protected gapless surface (or edge) states. Within each vortex core of TSCs, there exist the zero energy Majorana bound states, which are predicted to exhibit non-Abelian statistics and to form the basis of the fault-tolerant quantum computation. So far, no stoichiometric bulk material exhibits the required topological surface states (TSSs) at Fermi level combined with fully gapped bulk superconductivity. Here, we report atomic scale visualization of the TSSs of the non-centrosymmetric fully-gapped superconductor, PbTaSe2. Using quasiparticle scattering interference (QPI) imaging, we find two TSSs with a Dirac point at E~1.0eV, of which the inner TSS and partial outer TSS cross Fermi level, on the Pb-terminated surface of this fully gapped superconductor. This discovery reveals PbTaSe2 as a promising candidate as a TSC.

cond-mat.supr-con↗

arXiv2014

An Empirical Method to Measure Stochasticity and Multifractality in Nonlinear Time Series

An empirical algorithm is used here to study the stochastic and multifractal nature of nonlinear time series. A parameter can be defined to quantitatively measure the deviation of the time series from a Wiener process so that the stochasticity of different time series can be compared. The local volatility of the time series under study can be constructed using this algorithm and the multifractal structure of the time series can be analyzed by using this local volatility. As an example, we employ this method to analyze financial time series from different stock markets. The result shows that while developed markets evolve very much like an Ito process, the emergent markets are far from efficient. Differences about the multifractal structures and leverage effects between developed and emergent markets are discussed. The algorithm used here can be applied in a similar fashion to study time series of other complex systems.

q-fin.ST↗

arXiv2012

Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.

cond-mat.mtrl-sci↗

arXiv2012

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

cond-mat.mtrl-sci↗