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Chihun Song

Publications and source records attributed to Chihun Song.

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DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands

The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enhance reliability, and mitigate security vulnerability. Nonetheless, DRAM manufacturers have disclosed only a limited amount of information, making it difficult to find specific information on their DRAM microarchitectures. This paper addresses this gap by presenting more rigorous findings on the microarchitectures of commodity DRAM chips and their impacts on the characteristics of activate-induced bitflips (AIBs), such as RowHammer and RowPress. The previous studies have also attempted to understand the DRAM microarchitectures and associated behaviors, but we have found some of their results to be misled by inaccurate address mapping and internal data swizzling, or lack of a deeper understanding of the modern DRAM cell structure. For accurate and efficient reverse-engineering, we use three tools: AIBs, retention time test, and RowCopy, which can be cross-validated. With these three tools, we first take a macroscopic view of modern DRAM chips to uncover the size, structure, and operation of their subarrays, memory array tiles (MATs), and rows. Then, we analyze AIB characteristics based on the microscopic view of the DRAM microarchitecture, such as 6F^2 cell layout, through which we rectify misunderstandings regarding AIBs and discover a new data pattern that accelerates AIBs. Lastly, based on our findings at both macroscopic and microscopic levels, we identify previously unknown AIB vulnerabilities and propose a simple yet effective protection solution.

cs.CR

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing in memory, enhance reliability, and mitigate a vulnerability known as rowhammer. However, DRAM manufacturers only disclose limited information through official documents, making it difficult to find specific information about actual DRAM devices. This paper presents reliable findings on the internal structure and characteristics of DRAM using activate-induced bitflips (AIBs), retention time test, and row-copy operation. While previous studies have attempted to understand the internal behaviors of DRAM devices, they have only shown results without identifying the causes or have analyzed DRAM modules rather than individual chips. We first uncover the size, structure, and operation of DRAM subarrays and verify our findings on the characteristics of DRAM. Then, we correct misunderstood information related to AIBs and demonstrate experimental results supporting the cause of rowhammer. We expect that the information we uncover about the structure, behavior, and characteristics of DRAM will help future DRAM research.

cs.CR

Demystifying CXL Memory with Genuine CXL-Ready Systems and Devices

The ever-growing demands for memory with larger capacity and higher bandwidth have driven recent innovations on memory expansion and disaggregation technologies based on Compute eXpress Link (CXL). Especially, CXL-based memory expansion technology has recently gained notable attention for its ability not only to economically expand memory capacity and bandwidth but also to decouple memory technologies from a specific memory interface of the CPU. However, since CXL memory devices have not been widely available, they have been emulated using DDR memory in a remote NUMA node. In this paper, for the first time, we comprehensively evaluate a true CXL-ready system based on the latest 4th-generation Intel Xeon CPU with three CXL memory devices from different manufacturers. Specifically, we run a set of microbenchmarks not only to compare the performance of true CXL memory with that of emulated CXL memory but also to analyze the complex interplay between the CPU and CXL memory in depth. This reveals important differences between emulated CXL memory and true CXL memory, some of which will compel researchers to revisit the analyses and proposals from recent work. Next, we identify opportunities for memory-bandwidth-intensive applications to benefit from the use of CXL memory. Lastly, we propose a CXL-memory-aware dynamic page allocation policy, Caption to more efficiently use CXL memory as a bandwidth expander. We demonstrate that Caption can automatically converge to an empirically favorable percentage of pages allocated to CXL memory, which improves the performance of memory-bandwidth-intensive applications by up to 24% when compared to the default page allocation policy designed for traditional NUMA systems.

cs.PF