arXiv subjects

Chikako Moriyoshi

Publications and source records attributed to Chikako Moriyoshi.

35 records · Page 2Linked to original sources

arXiv2019

Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$

Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. The room-temperature lattice thermal conductivity of less than 1 W/mK is almost independent of x, in contrast to the point-defect scattering model for conventional alloys. The present work provides an avenue for exploring SbSe2-based insulating and BiSe2-based conducting systems.

cond-mat.mtrl-sci↗

arXiv2018

Na1-xSn2P2 as a new member of van der Waals-type layered tin pnictide superconductors

Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crystal structure consists of two layers of a buckled honeycomb network of SnP, bound by the vdW forces and separated by Na ions, as similar to that of NaSn2As2. Amount of Na deficiency (x) was estimated to be 0.074(18) using synchrotron X-ray diffraction. Bulk nature of superconductivity was confirmed by the measurements of electrical resistivity, magnetic susceptibility, and specific heat. First-principles calculation using density functional theory shows that Na1-xSn2P2 and NaSn2As2 have comparable electronic structure, suggesting higher Tc of Na1-xSn2P2 is resulted from increased density of states at the Fermi level due to Na deficiency. Because there are various structural analogues with tin-pnictide (SnPn) conducting layers, our results indicate that SnPn-based layered compounds can be categorized into a novel family of vdW-type superconductors, providing a new platform for studies on physics and chemistry of low-dimensional superconductors.

cond-mat.supr-con↗

arXiv2018

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.

cond-mat.mtrl-sci↗

arXiv2017

Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6

We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.

cond-mat.mtrl-sci↗

arXiv2017

Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)

In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+ ionic radius, the in-plane disorder of the S1 sites significantly decreased, very similar to the trend observed in the Se-substituted systems: LaO0.5F0.5BiS2-xSex and Eu0.5La0.5FBiS2-xSex. Therefore, the emergence of bulk superconductivity upon the suppression of the in-plane disorder at the chalcogen sites is a universal scenario for the BiCh2-based superconductors. In addition, we indicated that the amplitude of vibration along the c-axis of the in-plane chalcogen sites may be related to the Tc in the BiCh2-based superconductors.

cond-mat.supr-con↗

arXiv2017

Origin of high piezoelectricity at the morphotropic phase boundary (MPB) in (Pb0.94Sr0.06)(ZrxTi1-x)O3

In this work, we address the issue of peaking of piezoelectric response at a particular composition in the morphotropic phase boundary (MPB) region of (Pb0.940Sr0.06)(ZrxTi1-x)O3 (PSZT) piezoelectric ceramics. We present results of synchrotron x-ray powder diffraction, dielectric, piezoelectric and sound velocity studies to critically examine the applicability of various models for the peaking of physical properties. It is shown that the models based on the concepts of phase coexistence, polarization rotation due to monoclinic structure, tricritical point and temperature dependent softening of elastic modulus may enhance the piezoelectric response in the MPB region in general but cannot explain its peaking at a specific composition. Our results reveal that the high value of piezoelectric response for the MPB compositions in PSZT at x=0.530 is due to the softening of the elastic modulus as a function of composition. The softening of elastic modulus facilitates the generation of large piezoelectric strain and polarization on approaching the MPB composition of x=0.530. This new finding based on the softening of elastic modulus may pave the way forward for discovering/designing new lead-free environmentally friendly piezoelectric materials and revolutionize the field of piezoelectric ceramics.

cond-mat.mtrl-sci↗

arXiv2017

Intrinsic Phase Diagram of Superconductivity in the BiCh2-based System Without In-plane Disorder

We have investigated the crystal structure and physical properties of LaO1-xFxBiSSe to reveal the intrinsic superconductivity phase diagram of the BiCh2-based layered compound family. From synchrotron X-ray diffraction and Rietveld refinements with anisotropic displacement parameters, we clearly found that the in-plane disorder in the BiSSe layer was fully suppressed for all x. In LaO1-xFxBiSSe, metallic conductivity and superconductivity are suddenly induced by electron doping even at x = 0.05 and 0.1 with a monoclinic structure. In addition, x (F concentration) dependence of the transition temperature (Tc) for x = 0.2-0.5 with a tetragonal structure shows an anomalously flat phase diagram. With these experimental facts, we have proposed the intrinsic phase diagram of the ideal BiCh2-based superconductors with less in-plane disorder.

cond-mat.supr-con↗

arXiv2017

Bi Substitution Effects on Superconductivity of Valence-Skip superconductor AgSnSe2

We have synthesized AgSn1-xBixSe2 polycrystalline samples to investigate the effect of partial substitution of mixed-valence Sn by Bi3+ to the superconductivity of the valence-skip superconductor AgSnSe2. The Bi-substituted AgSn1-xBixSe2 were obtained up to x = 0.2, but an insulating phase Ag2SnBi2Se5 with a NaCl-type structure showed up above x = 0.3. The superconducting transition temperature increased from 4.5 K (x = 0) to 5.0 K (x = 0.1) by Bi substitution. The enhancement of superconductivity by the suppression of the valence-skip states of Sn suggests that the valence-skip states of Sn are not positively linked to the pairing mechanisms of superconductivity in the AgSnSe2 system.

cond-mat.supr-con↗

arXiv2016

Improper ferroelectricity in stuffed aluminate sodalites for pyroelectric energy harvesting

Ferroelectricity in stuffed aluminate sodalites is demonstrated in the present study. The present results indicate that stuffed aluminate sodalites exhibit excellent performance as a pyroelectric energy harvester, suggesting that they exhibit great promise as a class of materials for highly efficient energy harvesting devices. (See manuscript for the full abstract)

cond-mat.mtrl-sci↗

arXiv2015

Structures and Optical Absorption of Bi2OS2 and LaOBiS2

The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of ca. 1.0 eV, which were close to the computationally calculated direct band gaps of ca. 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements.

cond-mat.mtrl-sci↗

arXiv2015

In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure

BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.

cond-mat.supr-con↗

arXiv2014

Ground state of (Pb0.94Sr0.06)(Zr0.530Ti0.470)O3 in the morphotropic phase boundary region: Evidence for a monoclinic Cc space group

The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground state of PZT in the morphotropic phase boundary (MPB) region. The multiplet character of the neutron diffraction profiles of (3/2 1/2 1/2)pc (pseudocubic or pc indices) and (3/2 3/2 1/2)pc superlattice peaks, appearing below the AFD transition temperature, rules out the rhombohedral R3c space group. The true ground state is confirmed to be monoclinic in the Cc space group in agreement with the predictions of the first principles calculations and earlier findings for pure PZT in the MPB region. 6% Sr2+ substitution and the use of high wavelength (λ=2.44Å) neutrons have played key role in settling the existing controversies about the true ground state of PZT in the MPB region.

cond-mat.mtrl-sci↗

arXiv2014

Antiferrodistortive Phase Transition in Pseudorhombohedral (Pb0.94Sr0.06)(Zr0.550Ti0.450)O3 : A Combined Synchrotron x-ray and Neutron Powder Diffraction Study

The controversies about the structure of the true ground state of pseudorhombohedral compositions of Pb(ZrxTi1-x)O3 (PZT) are addressed using a 6% Sr2+ substituted sample with x=0.550. Sound velocity measurements reveal a phase transition at Tc~279K. The temperature dependence of FWHM of (h00)pc peaks and the unit cell volume also show anomalies around 279K even though there is no indication of any change of space group in the synchrotron X-ray powder diffraction (SXRD) patterns. The neutron powder diffraction patterns reveal appearance of superlattice peaks below Tc~279K confirming the existence of an antiferrodistortive phase transition. The Rietveld analysis of the room temperature and low temperature SXRD data below Tc shows that the structure corresponds to single monoclinic phase in the Cm space group while the analysis of neutron powder diffraction data reveals that the structure of the ground state phase below Tc corresponds to the Cc space group. Our analysis shows that the structural models for the ground state phase based on R3c space group with or without the coexistence of the room temperature monoclinic phase in the Cm space group can be rejected.

cond-mat.mtrl-sci↗

arXiv2014

Evidence for a tricritical point coinciding with the triple point in (Pb0.94Sr0.06)(ZrxTi1-x)O3 : A combined synchrotron x-ray diffraction, dielectric and Landau theory study

We present here results of high resolution synchrotron x-ray diffraction (SXRD) and dielectric studies in conjunction with Landau theory considerations on (Pb0.94Sr0.06)(ZrxTi1-x)O3 compositions in the vicinity of the morphotropic phase boundary (MPB) to find evidence for the flattening of the free energy surface at the MPB proposed in recent ab-initio studies on strongly piezoelectric ceramics. SXRD results reveal that the tetragonal and pseudorhombohedral monoclinic compositions with x=0.515 and 0.550 transform directly into the cubic paraelectric phase, whereas for 0.520<x<0.545, the pseudotetragonal as well as pseudorhombohedral monoclinic compositions first transform to the tetragonal phase and then to the cubic phase. Our results reveal the existence of a triple point at x~0.550. It is shown that the tetragonal to cubic transition, irrespective of the composition, upto x~0.545 is accompanied with a discontinuous change in the unit cell volume and thermal hysteresis confirming first order nature of this transition. The pseudorhombohedral monoclinic composition for x=0.550, on the other hand, transforms directly into the cubic phase in a second order manner. Our experimental results thus reveal a crossover from first order to second order phase transition through a tricritical point around x=0.550. Landau theory calculations also confirm gradual flattening of the free energy surface on approaching the tricritical composition x=0.550. We conclude that the triple point in the PZT phase diagram is indeed a tricritical point.

cond-mat.mtrl-sci↗

arXiv2010

Anisotropic Transport Properties of CeRu$_2$Al$_{10}$

We studied the transport properties of CeRu_2Al_10 single crystals. All the transport properties show largely anisotropic behaviors below T_0. Those along the a- and c-axes show similar behaviors, but are different from those along the b-axis. This suggests that the system could be viewed as a two-dimensional system. The results of the thermal conductivity and thermoelectric power could be explained by assuming the singlet ground state below T_0. However, the ground state is not simple but has some kind of structure within a spin gap.

cond-mat.str-el↗

arXiv2010

Existence of Fine Structure inside Spin Gap in CeRu2Al10

We investigate the magnetic field effect on the spin gap state in CeRu2Al10 by measuring the magnetization and electrical resistivity. We found that the magnetization curve for the magnetic field H//c shows a metamagnetic-like anomaly at H*~4 T below T_0=27 K, but no anomaly for H//a and H//b. A shoulder of the electrical resistivity at Ts~5 K for I//c is suppressed by applying a longitudinal magnetic field above 5 T. Many anomalies are also found in the magnetoresistance for Hkc below ~5 K. The obtained magnetic phase diagram consists of at least two or three phases below T_0. These results strongly indicate the existence of a fine structure at a low energy side in a spin gap state with the excitation energy of 8 meV recently observed in the inelastic neutron scattering experiments.

cond-mat.str-el↗

arXiv2010

Possible Long-Range Order with Singlet Ground State in CeRu2Al10

We investigate the thermal and transport properties of CexLa1-xRu2Al10 to clarify the origin of the recently discovered mysterious phase below T0=27 K in CeRu2Al10 where a large magnetic entropy is released, however, the existence of an internal magnetic field is ruled out by 27Al-NQR measurement. We find that T0 decreases with decreasing x and disappears at x~0.45. T0 of CeRu2Al10 is suppressed down to 26 K under H=14.5 T along the a-axis. These results clearly indicate that the transition has a magnetic origin and is ascribed to the interaction between Ce ions. Considering the results of specific heat, magnetic susceptibility, thermal expansion, and electrical resistivity and also 27Al NQR, we propose that the transition originates from the singlet pair formation between Ce ions. Although its properties in a Ce dilute region is basically understood by the impurity Kondo effect, CeRu2Al10 shows a Kondo-semiconductor-like behavior. The phase transition at T0 may be characterized as a new type of phase transition that appears during the crossover from the dilute Kondo to the Kondo semiconductor.

cond-mat.str-el↗