arXiv subjects

Chin Shan Lue

Publications and source records attributed to Chin Shan Lue.

8 recordsLinked to original sources

arXiv2026

Three-photon photoemission on metallic transition metal dichalcogenide NiTe$_{2}$

Three-photon photoemission (3PPE) signals on NiTe$_{2}$ are observed for the first time upon ultraviolet excitations. In the energy range beyond two-photon excitations, an energy-momentum dispersive feature is clearly identified with characteristic light polarization dependence. Based on its dispersion, spectral width, as well as intensity as a function of the parallel momentum, this dispersive 3PPE feature could be ascribed to an image potential resonance overlapping with an unoccupied Ni $4s$ -Te $4d$/$5p$ bulk band in accordance with the electronic band structure. Our results underlie higher-order non-linear photoemission on metallic transition metal dichalcogenides and facilitate future ultrafast studies of coherent electron dynamics in anisotropic, two-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2025

Magnetotransport evidence of a potential low-lying Dirac node in NbAl$_3$

NbAl$_3$ is a novel semimetal with a type-II Dirac node ~230 meV above the Fermi energy. We have performed both out-of-plane ($B\parallel c$) and in-plane magnetotransport measurements ($B\perp c$) on single-crystalline NbAl$_3$. In our out-of-plane data, we observe an interesting linear component in the transverse magnetoresistance, and the mobility spectrum analysis of the out-of-plane data reveals an emergence of high-mobility electrons at low temperatures. Near $B\parallel c$, Shubnikov-de Haas oscillations are discerned in the magnetoresistance. The oscillation frequencies agree with the density functional theory calculation, the same theory that shows that the Dirac node is far above the Fermi energy. Therefore, the out-of-plane results cannot be attributed to the type-II Dirac node but suggest NbAl$_3$ has additional Dirac or Weyl nodes close to the Fermi energy. To support this, we examine the in-plane data obtained with the magnetic field perpendicular to the tilting direction of the type-II Dirac cone. Such field direction excludes the possibility of chiral anomaly from the predicted type-II Dirac node. Remarkably, we observe the planar Hall effect, anisotropic magnetoresistance, and negative longitudinal magnetoresistance. These in-plane results are a strong indication of chiral anomaly unrelated to the previously established type-II Dirac node, pointing to the presence of additional Dirac or Weyl nodes near the Fermi energy. Our new density functional theory calculation reveals a type-I Dirac node ~50 meV below the Fermi energy that has previously been overlooked. We argue that the exotic transport phenomena observed in NbAl$_3$ can be attributed to the newly identified type-I Dirac node.

cond-mat.mtrl-sci↗

arXiv2023

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.

physics.app-ph↗

arXiv2023

Observation of highly anisotropic bulk dispersion and spin-polarized topological surface states in CoTe2

We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we find several topological band inversions in bulk CoTe2, which gives rise to a ladder of spin-polarized surface states over a wide range of energies. In contrast to the surface states which typically display Rashba-type in-plane spin splitting, we find that CoTe2 hosts novel out-of-plane spin polarization as well. Our work establishes CoTe2 as a potential candidate for the exploration of Dirac fermiology and applications in spintronic devices, infrared plasmonics, and ultrafast optoelectronics.

cond-mat.mtrl-sci↗

arXiv2022

Pressure-enhanced superconductivity in cage-type quasiskutterudite Sc5Rh6Sn18 single crystal

Sc5Rh6Sn18 with a cage-type quasiskutterudite crystal lattice and type II superconductivity, with superconducting transition temperature Tc = 4.99 K, was investigated under hydrostatic high-pressure (HP) using electrical transport, synchrotron X-ray diffraction (XRD) and Raman spectroscopy. Our data show that HP enhance the metallic nature and Tc of the system. Tc is found to show a continuous increase reaching to 5.24 K at 2.5 GPa. Athough the system is metallic in nature, Raman spectroscopy investigations at ambient pressure revealed the presence of three weak modes at 165.97, 219.86 and 230.35 cm-1, mostly related to the rattling atom Sc. The HP-XRD data revealed that the cage structure was stable without any structural phase transition up to ~7 GPa. The lattice parameters and volume exhibited a smooth decrease without any anomalies as a function of pressure in this pressure range. In particular, a second order Birch-Murnaghan equation of state can describe the pressure dependence of the unit cell volume well, yielding a bulk modulus of ~ 97 GPa. HP Raman investigations revealed a linear shift of all the three Raman modes to higher wavenumbers with increasing pressure up to ~8 GPa. As the pressure enhances the bond overlap, thus inducing more electronic charges into the system, HP-XRD and Raman results may indciate the possibility of obtaining higher Tc with increasing pressures in this pressure range.

cond-mat.supr-con↗

arXiv2021

Photonic Topological Transitions and Epsilon-Near-Zero Surface Plasmons in Type-II Dirac Semimetal NiTe$_2$

Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications.

cond-mat.mtrl-sci↗

arXiv2019

Low-energy type-II Dirac fermions and spin-polarized topological surface states in transition-metal dichalcogenide NiTe$_2$

Using spin- and angle- resolved photoemission spectroscopy (spin-ARPES) together with ${\it ab~initio}$ calculations, we demonstrate the existence of a type-II Dirac semimetal state in NiTe$_2$. We show that, unlike PtTe$_2$, PtSe$_2$, and PdTe$_2$, the Dirac node in NiTe$_2$ is located in close vicinity of the Fermi energy. Additionally, NiTe$_2$ also hosts a pair of band inversions below the Fermi level along the $Γ-A$ high-symmetry direction, with one of them leading to a Dirac cone in the surface states. The bulk Dirac nodes and the ladder of band inversions in NiTe$_2$ support unique topological surface states with chiral spin texture over a wide range of energies. Our work paves the way for the exploitation of the low-energy type-II Dirac fermions in NiTe$_2$ in the fields of spintronics, THz plasmonics and ultrafast optoelectronics.

cond-mat.mes-hall↗

arXiv2018

Broadband excitation spectrum of bulk crystals and thin layers of PtTe$_2$

We explore the broadband excitation spectrum of bulk PtTe$_2$ using electron energy loss spectroscopy and density functional theory. In addition to infrared modes related to intraband 3D Dirac plasmon and interband transitions between the 3D Dirac bands, we observe modes at 3.9, 7.5 and 19.0 eV in the ultraviolet region. The comparison of the excitation spectrum with the calculated orbital-resolved density of states allows us to ascribe spectral features to transitions between specific electronic states. Additionally, we study the thickness dependence of the high-energy plasmon in the PtTe2 thin films. We show that, unlike graphene, the high-energy plasmon in PtTe2 thin film gets red-shifted by 2.5 eV with increasing thickness.

cond-mat.mes-hall↗