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Chinedu E. Ekuma

Publications and source records attributed to Chinedu E. Ekuma.

11 recordsLinked to original sources

Microscopic Insights to the Ultralow Thermal Conductivity of Monolayer 1T-SnTe2

Two-dimensional (2D) metallic systems with intrinsically low lattice thermal conductivity are rare, yet they are of great interest for next-generation energy and electronic technologies. Here, we present a comprehensive first-principles investigation of monolayer tin telluride (SnTe2) in its 1T (CdI2-type, P3m1) structure. Our calculations establish its energetic and dynamical stability, confirmed by large cohesive (10.9 eV/atom) and formation (-4.06 eV/atom) energies and a phonon spectrum free of imaginary modes. The electronic band structure reveals metallicity arising from strong Sn-Te p orbital hybridization. Most importantly, phonon dispersion analysis uncovers a microscopic origin for the ultralow lattice thermal conductivity: the heavy mass of Te atoms, weak Sn-Te bonding, and flat acoustic branches that yield exceptionally low and anisotropic group velocities (~5.0 x 10^3 m/s), together with the absence of a phonon bandgap that enhances Umklapp scattering. These features converge to suppress phonon-mediated heat transport. Complementary calculations of the optical dielectric response and joint density of states reveal pronounced interband transitions and a plasmonic resonance near 4.84 eV, suggesting additional optoelectronic opportunities. These findings establish monolayer SnTe2 as a 2D material whose vibrational softness naturally enforces ultralow lattice thermal conductivity, underscoring its potential for thermoelectric applications.

cond-mat.mtrl-sci↗

Tunable topological phase in 2D ScV$_6$Sn$_6$ kagome material

We investigate the topological properties of the vanadium-based 2D kagome metal ScV$_6$Sn$_6$, a ferromagnetic material with a magnetic moment of 0.86 $μ_B$ per atom. Using ab initio methods, we explore spin-orbit coupling-induced gapped states and identify multiple Weyl-like crossings around the Fermi energy, confirming a Chern number $|C| = 1$ and a large anomalous Hall effect (AHE) of 257 $Ω^{-1}$cm$^{-1}$. Our calculations reveal a transition from a topological semimetal to a trivial metallic phase at an electric field strength of $\approx$0.40 eV/Å. These findings position 2D ScV$_6$Sn$_6$ as a promising candidate for applications in modern electronic devices, with its tunable topological phases offering the potential for future innovations in quantum computing and material design.

cond-mat.mtrl-sci↗

Rashba Spin-Orbit Coupling and Nonlocal Correlations in Disordered 2D Systems

We present an extension of the dynamical cluster approximation (DCA) that incorporates Rashba spin-orbit coupling (SOC) to investigate the interplay between disorder, spin-orbit interaction, and nonlocal spatial correlations in disordered two-dimensional systems. By analyzing the average density of states, momentum-resolved self-energy, and return probability, we demonstrate how Rashba SOC and nonlocal correlations jointly modify single-particle properties and spin-dependent interference. The method captures key features of the symplectic universality class, including SOC-induced delocalization signatures at finite times. We benchmark the DCA results against those obtained from the numerically exact kernel polynomial method, finding good agreement. This validates the computationally efficient, mean-field-based DCA framework as a robust tool for exploring disorder, spin-orbit coupling, and nonlocal correlation effects in low-dimensional systems, and paves the way for simulating multiorbital and strongly correlated systems that were previously inaccessible due to computational limitations.

cond-mat.dis-nn↗

Intrinsic Chern Half-Metal with High Anomalous Hall Conductivity in 2D BaNiCl$_3$

Two-dimensional (2D) half-metals offer complete spin polarization at the Fermi level, making them candidates for dissipationless spin transport. Yet intrinsic 2D half-metals exhibiting robust topological features, particularly large Chern number anomalous Hall conductivities, remain exceptionally rare. Using first-principles calculations, we identify atomically thin BaNiCl$_3$, a layered halide perovskite (perovskene), as a topological half-metal. It exhibits a high Chern number ($C \ge 2$), a large anomalous Hall conductivity of 316~$Ω^{-1},\mathrm{cm}^{-1}$, and a Fermi velocity of $\approx 0.78 \times 10^6$ m/s. The coexistence of complete spin polarization and high carrier velocity suggests low-dissipation spin transport. Spin-orbit coupling opens a sizable topological gap of $\sim 20\,$ meV, yielding nontrivial Berry curvature and enhancing the anomalous Hall response. Ferromagnetism is stabilized by the Ni$^{2+}$ ($d^8$) configuration and Cl-mediated superexchange, supporting magnetic ordering at elevated temperatures. These results establish BaNiCl$_3$ as a rare intrinsic Chern half-metal, with potential applications in quantum and spintronic technologies.

cond-mat.mes-hall↗

A High-Throughput and Data-Driven Computational Framework for Novel Quantum Materials

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDs), possess intrinsic van der Waals gap at the layer interface allowing for remarkable tunability of the optoelectronic features via external intercalation of foreign guests such as atoms, ions, or molecules. Herein, we introduce a high-throughput, data-driven computational framework for the design of novel quantum materials derived from intercalating planar conjugated organic molecules into bilayer transition metal dichalcogenides and dioxides. By combining first-principles methods, material informatics, and machine learning, we characterize the energetic and mechanical stability of this new class of materials and identify the fifty (50) most stable hybrid materials from a vast configurational space comprising $\sim 10^5$ materials, employing intercalation energy as the screening criterion.

cond-mat.mtrl-sci↗

Mechanical properties of cubic boron nitride and diamond at dynamical pressure and temperature

We report the mechanical properties of cubic boron nitride (c-BN) and diamond under the combined impact of dynamical pressure and temperature, calculated using ab initio molecular dynamics. Our study revealed a pronounced sensitivity of the mechanical properties of c-BN to applied pressure. Notably, c-BN undergoes a brittle-to-ductile transition at ~220 GPa, consistent across various dynamical temperatures, while diamond exhibits no such transition. Furthermore, the Vickers hardness profile for c-BN closely mirrors that of diamond across a spectrum of temperature-pressure conditions, highlighting c-BN's significant mechanical robustness. These results underscore the superior resilience and adaptability of c-BN compared to diamond, suggesting its potential as an ideal candidate for applications in extreme environments.

cond-mat.mtrl-sci↗

Investigating elastic constants across diverse strain-matrix sets

Elastic constants and mechanical properties play a pivotal role across multiple disciplines and engineering applications. We introduced the optimized high-efficient strain-matrix set (OHESS) that determines the second-order elastic constants of materials using the stress-strain method. Herein, we systematically investigate the computational efficiency of OHESS across a broad range of crystal systems and compare it with other notable stress-strain approaches, such as the single-element strain-matrix sets and the universal linear-independent coupling strains. Notably, our data affirm the superior efficacy of OHESS among the strain-matrix sets under consideration. We believe OHESS will markedly improve computational efficiency in determining the elastic constants and mechanical properties, becoming an indispensable tool for material research, design, and high-throughput screening.

cond-mat.mtrl-sci↗

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency.

cond-mat.mtrl-sci↗

Comments on All-electron mixed basis GW calculations of TiO2 and ZnO crystals

These brief comments on the article in Phys. Rev. B 93, 155116 (2016), address an inadvertent misrepresentation of the capabilities of density functional theory (DFT) and of its local density approximation (LDA) in describing electronic and related properties of materials accurately. The oversight of some previous LDA results that agree with experiments partly led to this unintended misrepresentation, in addition to a few assertions relative to perceived deficiencies of DFT.

cond-mat.mtrl-sci↗

Effective Cluster Typical Medium Theory for Diagonal Anderson Disorder Model in One- and Two-Dimensions

We develop a cluster typical medium theory to study localization in disordered electronic systems. Our formalism is able to incorporate non-local correlations beyond the local typical medium theory in a systematic way. The cluster typical medium theory utilizes the momentum resolved typical density of states and hybridization function to characterize the localization transition. We apply the formalism to the Anderson model of localization in one- and two-dimensions. In one dimension, we find that the critical disorder strength scales inversely with the linear cluster size with a power-law, $W_c \sim (1/L_c)^{1/ν}$; whereas in two dimensions, the critical disorder strength decreases logarithmically with the linear cluster size. Our results are consistent with previous numerical work and in agreement with the one-parameter scaling theory.

cond-mat.dis-nn↗

First-Principle Wannier function analysis of the electronic structure of PdTe: Weaker magnetism and superconductivity

We report a first-principles Wannier function study of the electronic structure of PdTe. Its electronic structure is found to be a broad three-dimensional Fermi surface with highly reduced correlations effects. In addition, the higher filling of the Pd $d$-shell, its stronger covalency resulting from the closer energy of the Pd-$d$ and Te-$p$ shells, and the larger crystal field effects of the Pd ion due to its near octahedral coordination all serve to weaken significantly electronic correlations in the particle-hole (spin, charge, and orbital) channel. In comparison to the Fe Chalcogenide e.g., FeSe, we highlight the essential features (quasi-two-dimensionality, proximity to half-filling, weaker covalency, and higher orbital degeneracy) of Fe-based high-temperature superconductors.

cond-mat.supr-con↗