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Chloe Clear

Publications and source records attributed to Chloe Clear.

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Silicon T centre hyperfine structure and memory protection schemes

Combining the long-coherence of spin qubits and the capability to transmit information and entanglement through photons, spin-photon interfaces (SPIs) are a promising platform for networked quantum computation and long-distance quantum communication. SPIs that possess local `memory' qubits in addition to the optically coupled `communication' qubit can improve remote entanglement fidelities through brokered entanglement schemes and entanglement purification. In these schemes, it is critical to protect the memory qubit from decoherence during entanglement operations on the communications qubit. Silicon, a platform with mature microelectronic and nanophotonic fabrication, is host to the T centre, an SPI with emission in the telecommunications O-band that directly integrates with silicon nanophotonics. Cavity-coupled T centres are a platform for brokered entanglement distribution in silicon photonic circuits and over long-distance optical fibre links. The T centre's electron and nuclear spin qubits are an intrinsic register of communication and memory qubits respectively, with anisotropic hyperfine coupling. In this work we determine the T centre's hydrogen hyperfine coupling tensor. We also introduce schemes to protect against dephasing or eliminate relaxation of the T centre's hydrogen memory qubit during optical excitation. These results address a key challenge for practical T centre quantum networks.

quant-ph

Laser-induced spectral diffusion and excited-state mixing of silicon T centres

To find practical application as photon sources for entangled optical resource states or as spin-photon interfaces in entangled networks, semiconductor emitters must produce indistinguishable photons with high efficiency and spectral stability. Nanophotonic cavity integration increases efficiency and bandwidth, but it also introduces environmental charge instability and spectral diffusion. Among various candidates, silicon colour centres have emerged as compelling platforms for integrated-emitter quantum technologies. Here we investigate the dynamics of spectral wandering in nanophotonics-coupled, individual silicon T centres using spectral correlation measurements. We observe that spectral fluctuations are driven predominantly by the near-infrared excitation laser, consistent with a power-dependent Ornstein-Uhlenbeck process, and show that the spectrum is stable for up to 1.5 ms in the dark. We demonstrate a 35x narrowing of the emitter linewidth to 110 MHz using a resonance-check scheme and discuss the advantage for pairwise entanglement rates and optical resource state generators. Finally, we report laser-induced spin-mixing in the excited state and discuss potential mechanisms common to both phenomena. These effects must be considered in calibrating T centre devices for high-performance entanglement generation.

quant-ph

Distributed Quantum Computing in Silicon

Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors consume remote entanglement distributed between modules to realize distributed quantum logic. Networked quantum computers will therefore require the capability to rapidly distribute high fidelity entanglement between modules. Here we present preliminary demonstrations of some key distributed quantum computing protocols on silicon T centres in isotopically-enriched silicon. We demonstrate the distribution of entanglement between modules and consume it to apply a teleported gate sequence, establishing a proof-of-concept for T centres as a distributed quantum computing and networking platform.

quant-ph

Optical transition parameters of the silicon T centre

The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

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Photon indistinguishability measurements under pulsed and continuous excitation

The indistinguishability of successively generated photons from a single quantum emitter is most commonly measured using two-photon interference at a beam splitter. Whilst for sources excited in the pulsed regime the measured bunching of photons reflects the full wavepacket indistinguishability of the emitted photons, for continuous wave (cw) excitation the inevitable dependence on detector timing resolution and driving strength obscures the underlying photon interference process. Here we derive a method to extract the photon indistinguishability from cw measurements by considering the relevant correlation functions. The equivalence of both methods is experimentally verified through comparison of cw and pulsed excitation of an archetypal source of photons, a single molecule.

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The NV centre coupled to an ultra-small mode volume cavity: a high efficiency source of indistinguishable photons at 200 K

Solid state atom-like systems have great promise for linear optic quantum computing and quantum communication but are burdened by phonon sidebands and broadening due to surface charges. Nevertheless, coupling to a small mode volume cavity would allow high rates of extraction from even highly dephased emitters. We consider the nitrogen vacancy centre in diamond, a system understood to have a poor quantum optics interface with highly distinguishable photons, and design a silicon nitride cavity that allows 99 % efficient extraction of photons at 200 K with an indistinguishability of > 50%, improvable by external filtering. We analyse our design using FDTD simulations, and treat optical emission using a cavity QED master equation valid at and beyond strong coupling and which includes both ZPL broadening and sideband emission. The simulated design is compact (< 10 um), and owing to its planar geometry, can be fabricated using standard silicon processes. Our work therefore points towards scalable fabrication of non-cryogenic atom-like efficient sources of indistinguishable photons.

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Phonon-induced optical dephasing in single organic molecules

Organic molecules have recently gained attention as novel sources of single photons. We present a joint experiment--theory analysis of the temperature-dependent emission spectra, zero-phonon linewidth, and second-order correlation function of light emitted from a single molecule. We observe spectra with a zero-phonon-line together with several additional sharp peaks, broad phonon sidebands, and a strongly temperature dependent homogeneous broadening. Our model includes both localised vibrational modes of the molecule and a thermal phonon bath, which we include non-perturbatively, and is able capture all observed features. For resonant driving we measure Rabi oscillations that become increasingly damped with temperature, which our model naturally reproduces. Our results constitute an essential characterisation of the photon coherence of these promising molecules, paving the way towards their use in future quantum information applications.

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