arXiv subjects

Christelle Monat

Publications and source records attributed to Christelle Monat.

10 recordsLinked to original sources

arXiv2026

Pulley coupler engineering for frequency comb generation based on the supermodal approach

Light coupling into integrated microresonators is typically achieved using straight bus couplers that are optimized to achieve critical coupling at the pump wavelength but lack spectral engineering capabilities. Pulley couplers offer additional degrees of freedom and opportunities, but optimizing their spectral response requires intensive and time-consuming numerical simulations. To address this challenge, we developed a semi-analytical approach to quickly and efficiently calculate the coupling quality factor of pulley couplers. This enables the design of either broadband or wavelength-selective pulley couplers, depending on the target application. We illustrate the dispersion engineering capabilities offered by this new approach in the context of Kerr microcombs and experimentally validate it on the SiN photonic platform. We show that it is possible to achieve a non-dispersive broadband coupler, enabling the generation of frequency combs with similar spectral characteristics (span and intensity) irrespectively of the chosen pump wavelength.

physics.optics↗

arXiv2026

Enhanced selfphase modulation in silicon nitride waveguides with integrated 2D MoS2 films

On-chip integration of 2D materials provides a promising route towards next-generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self-phase modulation (SPM) is experimentally demonstrated in silicon nitride (Si3N4) waveguides integrated with 2D monolayer molybdenum disulfide (MoS2) films. Monolayer MoS2 films with ultrahigh optical nonlinearity are synthesized via low-pressure chemical vapor deposition (LPCVD) and subsequently transferred onto Si3N4 waveguides, with precise control of the film coating length and placement achieved by selectively opening windows on the chip silica upper cladding. Detailed SPM measurements at telecom wavelengths are performed using fabricated waveguides with various MoS2 film coating lengths. Compared to devices without MoS2, increased spectral broadening of sub-picosecond optical pulses is observed for the hybrid devices, achieving a broadening factor of up to ~ 2.4 for a device with a 1.4-mm-long MoS2 film. Theoretical fitting of the experimental results further reveals an increase of up to ~27 fold in the nonlinear parameter ({\gamma}) for the hybrid MoS2 / Si3N4 waveguides and an equivalent Kerr coefficient (n2) of MoS2 nearly 5 orders of magnitude higher than Si3N4. These results confirm the effectiveness of on-chip integration of 2D MoS2 films to enhance the nonlinear optical performance of integrated photonic devices.

physics.optics↗

arXiv2024

One Million Quality Factor Integrated Ring Resonators in the Mid-Infrared

We report ring resonators on a silicon germanium on silicon platform operating in the mid-infrared wavelength range around 3.5 - 4.6 {\mu}m with quality factors reaching up to one million. Advances in fabrication technology enable us to demonstrate such high Q-factors, which put silicon germanium at the forefront of mid-infrared integrated photonic platforms. The achievement of high Q is attested by the observation of degeneracy lifting between clockwise (CW) and counter-clockwise (CCW) resonances, as well as optical bistability due to an efficient power buildup in the rings.

physics.optics↗

arXiv2024

Waveguide optical parametric amplifiers in silicon nitride with 2D graphene oxide films

Optical parametric amplification (OPA) represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, optical microcombs, entangled photon pairs and a wide range of other applications. Here, we demonstrate optical parametric amplifiers based on silicon nitride (Si3N4) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. We achieve precise control over the thickness, length, and position of the GO films using a transfer-free, layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography. Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of ~24.0 dB, representing a ~12.2 dB improvement relative to the device without GO. We perform a theoretical analysis of the device performance, achieving good agreement with experiment and showing that there is substantial room for further improvement. This work represents the first demonstration of integrating 2D materials on chips to enhance the OPA performance, providing a new way of achieving high performance photonic integrated OPA by incorporating 2D materials.

physics.optics↗

arXiv2022

Enhanced self-phase modulation in silicon nitride waveguides integrated with 2D graphene oxide films

We experimentally demonstrate enhanced self-phase modulation (SPM) in silicon nitride (Si3N4) waveguides integrated with 2D graphene oxide (GO) films. GO films are integrated onto Si3N4 waveguides using a solution-based, transfer-free coating method that enables precise control of the film thickness. Detailed SPM measurements are carried out using both picosecond and femtosecond optical pulses. Owing to the high Kerr nonlinearity of GO, the hybrid waveguides show significantly improved spectral broadening compared to the uncoated waveguide, achieving a broadening factor of up to ~3.4 for a device with 2 layers of GO. By fitting the experimental results with theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of up to 18.4 and a Kerr coefficient (n2) of GO that is about 5 orders of magnitude higher than Si3N4. Finally, we provide a theoretical analysis for the influence of GO film length, coating position, and its saturable absorption on the SPM performance. These results verify the effectiveness of on-chip integrating 2D GO films to enhance the nonlinear optical performance of Si3N4 devices.

physics.optics↗

arXiv2020

Enhanced four-wave-mixing and 3rd order optical nonlinearity in SiN nanowires integrated with graphene oxide films

Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four wave mixing (FWM). Owing to the strong light matter interaction between the SiN waveguides and the highly nonlinear GO films, the FWM performance of the hybrid waveguides is significantly improved. SiN waveguides with both uniformly coated and patterned GO films are fabricated based on a transfer free, layer by layer GO coating method together with standard photolithography and lift off processes, yielding precise control of the film thickness, placement and coating length. Detailed FWM measurements are carried out for the fabricated devices with different numbers of GO layers and at different pump powers. By optimizing the trade off between the nonlinearity and loss, we obtain a significant improvement in the FWM conversion efficiency of 7.3 dB for a uniformly coated device with 1 layer of GO and 9.1 dB for a patterned device with 5 layers of GO. We also obtain a significant increase in FWM bandwidth for the patterned devices. A detailed analysis of the influence of pattern length and position on the FWM performance is performed. Based on the FWM measurements, the dependence of GOs third-order nonlinearity on layer number and pump power is also extracted, revealing interesting physical insights about the 2D layered GO films. Finally, we obtain an enhancement in the effective nonlinear parameter of the hybrid waveguides by over a factor of 100. These results verify the enhanced nonlinear optical performance of SiN waveguides achievable by incorporating 2D layered GO films.

physics.optics↗

arXiv2014

Stable, highly nonlinear amorphous silicon nanowires with very low nonlinear absorption

The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally demonstrated. A high nonlinear refractive index, n2=1.19 x 10-17 m2/W, combined with a low two-photon absorption, 0.14 x 10-11 m/W, resulted in a high nonlinear FOM of 5.5. Furthermore, systematic studies over hours of operational time under 2.2W of pulse peak power revealed no degradation of the optical response.

physics.optics↗

arXiv2014

Ultra-compact optical auto-correlator based on slow-light enhanced third harmonic generation in a silicon photonic crystal waveguide

The ability to use coherent light for material science and applications is directly linked to our ability to measure short optical pulses. While free-space optical methods are well-established, achieving this on a chip would offer the greatest benefit in footprint, performance, flexibility and cost, and allow the integration with complementary signal processing devices. A key goal is to achieve operation at sub-Watt peak power levels and on sub-picosecond timescales. Previous integrated demonstrations require either a temporally synchronized reference pulse, an off-chip spectrometer, or long tunable delay lines. We report the first device capable of achieving single-shot time-domain measurements of near-infrared picosecond pulses based on an ultra-compact integrated CMOS compatible device, with the potential to be fully integrated without any external instrumentation. It relies on optical third-harmonic generation in a slow-light silicon waveguide. Our method can also serve as a powerful in-situ diagnostic tool to directly map, at visible wavelengths, the propagation dynamics of near-infrared pulses in photonic crystals.

physics.optics↗

arXiv2011

Characteristics of Correlated Photon Pairs Generated in Ultra-compact Silicon Slow-light Photonic Crystal Waveguides

We report the characterization of correlated photon pairs generated in dispersion-engineered silicon slow-light photonic crystal waveguides pumped by picosecond pulses. We found that taking advantage of the 15 nm flat-band slow-light window (vg ~ c/30) the bandwidth for correlated photon-pair generation in 96 and 196 \mum long waveguides was at least 11.2 nm; while a 396 \mum long waveguide reduced the bandwidth to 8 nm (only half of the slow-light bandwidth due to the increased impact of phase matching in a longer waveguide). The key metrics for a photon-pair source: coincidence to accidental ratio (CAR) and pair brightness were measured to be a maximum 33 at a pair generation rate of 0.004 pair per pulse in a 196 \mum long waveguide. Within the measurement errors the maximum CAR achieved in 96, 196 and 396 \mum long waveguides is constant. The noise analysis shows that detector dark counts, leaked pump light, linear and nonlinear losses, multiple pair generation and detector jitter are the limiting factors to the CAR performance of the sources.

quant-ph↗

arXiv2011

Slow-light Enhanced Correlated Photon-Pair Generation in Silicon

We report the generation of correlated photon pairs in the telecom C-band, at room temperature, from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8, at a pair generation rate of 0.006 per pulse, this ultra-compact photon pair source is immediately applicable towards scalable quantum information processing realized on-chip.

quant-ph↗