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Christian Ertler

Publications and source records attributed to Christian Ertler.

18 recordsLinked to original sources

Qudit extension of parameterized IQP circuits: A generative quantum machine learning approach to integer data

Parameterized Instantaneous Quantum Polynomial (IQP) circuits have proven useful in quantum generative learning models, particularly for binary distributions. However, when applied to non-binary datasets, they exhibit notable limitations: mapping integer values into qubit-compatible binary representations often destroys the original metric structure of the data. In this paper we aim to extend them to a qudits formulation operating on an integer mapping of the data. The IQP quantum circuit is adapted to encode each integer valued pixel into a bit-string of fixed length and quantum gates are transformed to follow the qudit formalism. As a generative machine learning approach, a suitable loss function for the circuit training and the calculation of the covariance matrix among features are developed and validated on the energy deposits from single-particle electron showers in the electromagnetic calorimeter of the CLIC detector. The method proposed in this work can be also extended to other applications that utilize quantum generative machine learning for non-binary data.

quant-ph

Multi-Qubit Parity Gates for Rydberg Atoms in Various Configurations

We present a native approach for realizing multi-qubit parity phase gates in neutral atom systems through global phase modulation of a Rydberg excitation laser. By shaping the temporal profile of the laser's phase, we enable high fidelity, time efficient entangling operations between multiple qubits without requiring individual qubit addressing. To mitigate intrinsic noise sources including spontaneous decay and motional effects, we develop a noise-aware optimal control framework that reduces gate errors under the presence of noise while maintaining smooth pulse profiles suitable for experimental implementation. In addition to equidistant qubit arrangements, we explore the impact of non-equidistant atomic configurations, where interaction inhomogeneity becomes significant. In these cases, the flexibility of our control approach helps to compensate for such variations, supporting reliable gate performance across different spatial layouts. These results facilitate the practical implementation of complex, multi-qubit quantum operations in near-term neutral atom quantum processors.

quant-ph

Runtime Reduction in Linear Quantum Charge-Coupled Devices using the Parity Flow Formalism

Using the Parity Flow formalism, we show that physical SWAP gates can be eliminated in linear hardware architectures, without increasing the total number of two-qubit operations. This has a significant impact on the execution time of quantum circuits in linear Quantum Charge-Coupled Devices (QCCDs), where SWAP gates are implemented by physically changing the position of the ions. Because SWAP gates are one of the most time-consuming operations in QCCDs, our scheme considerably reduces the runtime of the quantum Fourier transform and the quantum approximate optimization algorithm on all-to-all spin models, compared to circuits generated with standard compilers (TKET and Qiskit). While increasing the problem size (and therefore the number of qubits) typically demands longer runtimes, which are constrained by coherence time, our runtime reduction enables a significant increase in the number of qubits at a given coherence time.

quant-ph

Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor

Motivated by the prospect of a two-dimensional square-lattice geometry for semiconductor spin qubits, we explore the realization of the Parity Architecture with quantum dots (QDs). We present sequences of spin shuttling and quantum gates that implement the Parity Quantum Approximate Optimization Algorithm (QAOA) on a lattice constructed of identical unit cells, such that the circuit depth is always constant. We further develop a detailed error model for a hardware-specific analysis of the Parity Architecture and we estimate the errors during one round of Parity QAOA. The model includes a general description of the shuttling errors as a function of the probability distribution function of the valley splitting, which is the main limitation for the performance. We compare our approach to a superconducting transmon qubit chip and we find that with high-fidelity spin shuttling the performance of the spin qubits is competitive or even exceeds the results of the transmons. Finally, we discuss the possibility of decoding the logical quantum state and of quantum error mitigation. We find that already with near-term spin qubit devices a sufficiently low physical error probability can be expected to reliably perform Parity QAOA with a short depth in a regime where the success probability compares favorably to standard QAOA.

quant-ph

Encoding-Independent Optimization Problem Formulation for Quantum Computing

We present an encoding and hardware-independent formulation of optimization problems for quantum computing. Using this generalized approach, we present an extensive library of optimization problems and their various derived spin encodings. Common building blocks that serve as a construction kit for building these spin Hamiltonians are identified. This paves the way towards a fully automatic construction of Hamiltonians for arbitrary discrete optimization problems. The presented freedom in the problem formulation is a key step for tailoring optimal spin Hamiltonians for different hardware platforms.

quant-ph

The Mapillary Traffic Sign Dataset for Detection and Classification on a Global Scale

Traffic signs are essential map features globally in the era of autonomous driving and smart cities. To develop accurate and robust algorithms for traffic sign detection and classification, a large-scale and diverse benchmark dataset is required. In this paper, we introduce a traffic sign benchmark dataset of 100K street-level images around the world that encapsulates diverse scenes, wide coverage of geographical locations, and varying weather and lighting conditions and covers more than 300 manually annotated traffic sign classes. The dataset includes 52K images that are fully annotated and 48K images that are partially annotated. This is the largest and the most diverse traffic sign dataset consisting of images from all over world with fine-grained annotations of traffic sign classes. We have run extensive experiments to establish strong baselines for both the detection and the classification tasks. In addition, we have verified that the diversity of this dataset enables effective transfer learning for existing large-scale benchmark datasets on traffic sign detection and classification. The dataset is freely available for academic research: https://www.mapillary.com/dataset/trafficsign.

cs.CV

Electric control of tunneling energy in graphene double dots

We theoretically investigate the spectrum of a single electron double quantum dot, defined by top gates in a graphene with a substrate induced gap. We examine the effects of electric and magnetic fields on the spectrum of localized states, focusing on the tunability of the inter-dot coupling. We find that the substrate induced gap allows for electrostatic control, with some limitations that for a fixed inter-dot distance, the inter-dot coupling can not be made arbitrarily small due to the Klein tunneling. On the other hand, the proximity of the valence band in graphene allows for new regimes, such as an $npn$ double dot, which have no counterparts in GaAs.

cond-mat.mes-hall

Surface plasmons in doped topological insulators

We investigate surface plasmons at a planar interface between a normal dielectric and a topological insulator, where the Fermi-energy lies inside the bulk gap of the topological insulator and gives rise to a two-dimensional charge distribution of free Dirac electrons. We develop the methodology for the calculation of plasmon dispersions, using the framework of classical electrodynamics, with modified constituent equations due to Hall currents in the topological insulator, together with a Lindhard-type description for the two-dimensional charge distribution of free Dirac electrons. For a system representative for Bi$_2$X$_3$ binary compounds, we find in agreement with recent related work that the modified constituent equations have practically no impact on the surface plasmon dispersion but lead to a rotation of the magnetic polarization of surface plasmons out of the interface plane.

cond-mat.mes-hall

Gate-defined coupled quantum dots in topological insulators

We consider electrostatically coupled quantum dots in topological insulators, otherwise confined and gapped by a magnetic texture. By numerically solving the (2+1) Dirac equation for the wave packet dynamics, we extract the energy spectrum of the coupled dots as a function of bias-controlled coupling and an external perpendicular magnetic field. We show that the tunneling energy can be controlled to a large extent by the electrostatic barrier potential. Particularly interesting is the coupling via Klein tunneling through a resonant valence state of the barrier. The effective three-level system nicely maps to a model Hamiltonian, from which we extract the Klein coupling between the confined conduction and valence dots levels. For large enough magnetic fields Klein tunneling can be completely blocked due to the enhanced localization of the degenerate Landau levels formed in the quantum dots.

cond-mat.mes-hall

Dirac fermion wave guide networks on topological insulator surfaces

Magnetic texturing on the surface of a topological insulator allows the design of wave guide networks and beam splitters for domain-wall Dirac fermions. Guided by simple analytic arguments we model a Dirac fermion interferometer consisting of two parallel pathways, whereby a newly developed staggered-grid leap-frog discretization scheme in 2+1 dimensions with absorbing boundary conditions is employed. The net transmission can be tuned between constructive to destructive interference, either by variation of the magnetization (path length) or an applied bias (wave length). Based on this principle, a Dirac fermion transistor is proposed. Extensions to more general networks are discussed.

cond-mat.mes-hall

Electrical control of ferromagnetism in Mn-doped semiconductor heterostructures

The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for disorder in the Mn--doped regions and unwanted spin-flips at heterointerfaces on phenomenological ground. We find that the magnetization in GaMnAs layers can be controlled by an external electric bias. The underlying mechanism is identified as spin-selective hole tunneling in and out of the Mn-doped quantum wells, whereby the applied bias determines both hole population and spin polarization in these layers. In particular we predict that, near resonance, ferromagnetic order in the Mn doped quantum wells is destroyed. The interplay of both magnetic and transport properties combined with structural design potentially leads to several interrelated physical phenomena, such as dynamic spin filtering, electrical control of magnetization in individual magnetic layers, and, under specific bias conditions, to self-sustained current and magnetization oscillations (magneticmulti-stability). Relevance to recent experimental results is discussed.

cond-mat.mes-hall

Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures

The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The magnetic state of the well is determined self-consistently by the tunneling current which controls the hole spin density and, hence, the degree of exchange splitting of the subbands inside the well. Prompted by recent experiments we compare model systems of increasing defect concentration (substitutional disorder) regarding their I-V curve, magnetic state, and spin polarization. We predict that, near resonance, the ferromagnetic order which may be present at zero bias in the GaMnAs well tends to be destroyed. Resonance peaks are found to be more sensitive to disorder than ferromagnetic ordering and spin polarization of the steady-state current.

cond-mat.mes-hall

Proposal for a ferromagnetic multiwell spin oscillator

The highly nonlinear coupling of transport and magnetic properties in a multiwell heterostructure, which comprises ferromagnetic quantum wells made of diluted magnetic semiconductors, is theoretically investigated. The interplay of resonant tunneling and carrier-mediated ferromagnetism in the magnetic wells induces very robust, self-sustained current and magnetization oscillations. Over a large window of steady bias voltages the spin polarization of the collector current is oscillating between positive and negative values, realizing a spin oscillator device.

cond-mat.mes-hall

Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures

The conditions for the occurrence of pronounced magnetoelectric bistabilities in the resonant tunneling through a ferromagnetic quantum well are theoretically investigated. The bistability appears due to the mutual feedback of the carriers Coulomb interaction and the carriers exchange coupling with magnetic impurities in the well. It is shown that the well Curie temperature depends strongly on the relative alignment of the quantum well level and the reservoirs chemical potentials, which can be modified electrically. Switching between a "current-on/magnetism-off" and a "current-off/magnetism-on" mode becomes possible, if the well temperature lies in-between the bistable values of the well Curie temperature.

cond-mat.other

Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures

The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic region not only induces, but also takes part in intrinsic, robust, and sustainable high-frequency current oscillations over a large window of nominally steady bias voltages. This phenomenon could spawn a new class of quantum electronic devices based on ferromagnetic semiconductors.

cond-mat.mes-hall

Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes

We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relative magnetization angle the total resistance exhibits a discrete jump realizing digital magneto resistance. The interplay between the emitter's Fermi energy level and the relative magnetization orientations allows to tailor the current voltage characteristics of the ferromagnetic diode from ohmic to negative differential resistance regime at low voltages.

cond-mat.other

Proposal for a digital converter of analog magnetic signals

A device which converts analog magnetic signals directly into digital information is proposed. The device concept is based on the monostable-bistable transition logic element, which consists of two resonant tunneling diodes (load and driver) connected in series and employs the monostable to bistable working point transition of the circuit. Using a magnetic resonant tunneling diode as the driver allows to control the resulting working point of the bistable region by an external magnetic field leading either to high or low output voltage of the circuit, effectively realizing what could be called digital magnetoresistance.

cond-mat.mes-hall

Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.

cond-mat.mes-hall