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Christian Flindt

Publications and source records attributed to Christian Flindt.

At least 109 records · Page 6Linked to original sources

High cumulants in the counting statistics measured for a quantum dot

We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates of the measurement, and show that the quality of our experimental results is sufficiently high to extract cumulants of the distribution up to the 20th order for short times.

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Electronic properties of graphene antidot lattices

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency, and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our density functional theory scheme.

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Universal oscillations in counting statistics

Noise is a result of stochastic processes that originate from quantum or classical sources. Higher-order cumulants of the probability distribution underlying the stochastic events are believed to contain details that characterize the correlations within a given noise source and its interaction with the environment, but they are often difficult to measure. Here we report measurements of the transient cumulants < > of the number n of passed charges to very high orders (up to m=15) for electron transport through a quantum dot. For large m, the cumulants display striking oscillations as functions of measurement time with magnitudes that grow factorially with m. Using mathematical properties of high-order derivatives in the complex plane we show that the oscillations of the cumulants in fact constitute a universal phenomenon, appearing as functions of almost any parameter, including time in the transient regime. These ubiquitous oscillations and the factorial growth are system-independent and our theory provides a unified interpretation of previous theoretical studies of high-order cumulants as well as our new experimental data.

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The influence of charge detection on counting statistics

We consider the counting statistics of electron transport through a double quantum dot with special emphasis on the dephasing induced by a nearby charge detector. The double dot is embedded in a dissipative enviroment, and the presence of electrons on the double dot is detected with a nearby quantum point contact. Charge transport through the double dot is governed by a non-Markovian generalized master equation. We describe how the cumulants of the current can be obtained for such problems, and investigate the difference between the dephasing mechanisms induced by the quantum point contact and the coupling to the external heat bath. Finally, we consider various open questions of relevance to future research.

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Optical properties of graphene antidot lattices

Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.

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Counting Statistics of Non-Markovian Quantum Stochastic Processes

We derive a general expression for the cumulant generating function (CGF) of non-Markovian quantum stochastic transport processes. The long-time limit of the CGF is determined by a single dominating pole of the resolvent of the memory kernel from which we extract the zero-frequency cumulants of the current using a recursive scheme. The finite-frequency noise is expressed not only in terms of the resolvent, but also initial system-environment correlations. As an illustrative example we consider electron transport through a dissipative double quantum dot for which we study the effects of dissipation on the zero-frequency cumulants of high orders and the finite-frequency noise.

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Graphene Antidot Lattices - Designed Defects and Spin Qubits

Antidot lattices, defined on a two-dimensional electron gas at a semiconductor heterostructure, are a well-studied class of man-made structures with intriguing physical properties. We point out that a closely related system, graphene sheets with regularly spaced holes ("antidots"), should display similar phenomenology, but within a much more favorable energy scale, a consequence of the Dirac fermion nature of the states around the Fermi level. Further, by leaving out some of the holes one can create defect states, or pairs of coupled defect states, which can function as hosts for electron spin qubits. We present a detailed study of the energetics of periodic graphene antidot lattices, analyze the level structure of a single defect, calculate the exchange coupling between a pair of spin qubits, and identify possible avenues for further developments.

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Non-Markovian signatures in the current noise of a charge qubit

We investigate the current noise of a charge qubit coupled to a phonon bath in different parameter regimes. We find, using the theory of Full Counting Statistics of non-Markovian systems, that the current fluctuations are strongly influenced by memory effects generated from the interplay between quantum coherence and the dynamics of the phonon bath.

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Designed defects in 2D antidot lattices for quantum information processing

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

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Spin qubits in antidot lattices

We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice and tunnel coupling of neighboring defect states with corresponding electrostatically controllable exchange coupling between different electron spins.

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Failure of standard approximations of the exchange coupling in nanostructures

We calculate the exchange coupling for a double dot system using a novel, numerically exact yet efficient technique, based on finite-element methods. Specifically, we evaluate the exchange coupling both for a quasi-one and a two-dimensional system, also including an applied magnetic field. Our numerical results provide a stringent test for standard approximation schemes (e.g., Heitler-London, Hund-Mulliken, Hubbard), and they show that the standard methods do not have reliable predictive power for real quantum-dot systems.

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Non-Markovian dynamics in the theory of full counting statistics

We consider the theoretical description of real-time counting of electrons tunneling through a Coulomb-blockade quantum dot using a detector with finite bandwidth. By tracing out the quantum dot we find that the dynamics of the detector effectively is non-Markovian. We calculate the cumulant generating function corresponding to the resulting non-Markovian rate equation and find that the measured current cumulants behave significantly differently compared to those of a Markovian transport process. Our findings provide a novel interpretation of noise suppression found in a number of systems.

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Spin-Photon Entangling Diode

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed.

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Spin-orbit induced spin-qubit control in nanowires

We elaborate on a number of issues concerning our recent proposal for spin-qubit manipulation in nanowires using the spin-orbit coupling. We discuss the experimental status and describe in further detail the scheme for single-qubit rotations. We present a derivation of the effective two-qubit coupling which can be extended to higher orders in the Coulomb interaction. The analytic expression for the coupling strength is shown to agree with numerics.

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Spin-Orbit Mediated Control of Spin Qubits

We propose to use the spin-orbit interaction as a means to control electron spins in quantum dots, enabling both single qubit and two qubit operations. Very fast single qubit operations may be achieved by temporarily displacing the electrons. For two qubit operations the coupling mechanism is based on a combination of the spin-orbit coupling and the mutual long-ranged Coulomb interaction. Compared to existing schemes using the exchange coupling, the spin-orbit induced coupling is less sensitive to random electrical fluctuations in the electrodes defining the quantum dots.

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Quantum computing via defect states in two-dimensional anti-dot lattices

We propose a new structure suitable for quantum computing in a solid state environment: designed defect states in antidot lattices superimposed on a two-dimensional electron gas at a semiconductor heterostructure. State manipulation can be obtained with gate control. Model calculations indicate that it is feasible to fabricate structures whose energy level structure is robust against thermal dephasing.

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Noise and Bistabilities in Quantum Shuttles

We present a study of current fluctuations in two models proposed as quantum shuttles. Based on a numerical evaluation of the first three cumulants of the full counting statistics we have recently shown that a giant enhancement of the zero-frequency current noise in a single-dot quantum shuttle can be explained in terms of a bistable switching between two current channels. By applying the same method to a quantum shuttle consisting of a vibrating quantum dot array, we show that the same mechanism is responsible for a giant enhancement of the noise in this model, although arising from very different physics. The interpretation is further supported by a numerical evaluation of the finite-frequency noise. For both models we give numerical results for the effective switching rates.

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Full counting statistics of nano-electromechanical systems

We develop a theory for the full counting statistics (FCS) for a class of nanoelectromechanical systems (NEMS), describable by a Markovian generalized master equation. The theory is applied to two specific examples of current interest: vibrating C60 molecules and quantum shuttles. We report a numerical evaluation of the first three cumulants for the C60-setup; for the quantum shuttle we use the third cumulant to substantiate that the giant enhancement in noise observed at the shuttling transition is due to a slow switching between two competing conduction channels. Especially the last example illustrates the power of the FCS.

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