arXiv subjects
Publications and source records attributed to Christian Reimer.
We report the first 3.2 and 4.2 Tbps (8 x 225Gbaud PAM4-8), IM/DD transmission system using FR8 and DR8 configurations with TFLN modulators driven by a 3nm SerDes under the HD-FEC threshold.
Resonator-based optical frequency comb generation is an enabling technology for a myriad of applications ranging from communications to precision spectroscopy. These frequency combs can be generated in nonlinear resonators driven using either continuous-wave (CW) light, which requires alignment of the pump frequency with the cavity resonance, or pulsed light, which also mandates that the pulse repetition rate and cavity free spectral range (FSR) are carefully matched. Advancements in nanophotonics have ignited interest in chip-scale optical frequency combs. However, realizing pulse-driven on-chip Kerr combs remains challenging, as microresonator cavities have limited tuning range in their FSR and resonance frequency. Here, we take steps to overcome this limitation and demonstrate broadband frequency comb generation using a $\chi^{(3)}$ resonator synchronously pumped by a tunable femtosecond pulse generator with on-chip amplitude and phase modulators. Notably, employing pulsed pumping overcomes limitations in Kerr comb generation typically seen in crystalline resonators from stimulated Raman scattering.
Optical isolator is an indispensable component of almost any optical system and is used to protect a laser from unwanted reflections for phase-stable coherent operation. The development of chip-scale optical systems, powered by semiconductor lasers integrated on the same chip, has resulted in a need for a fully integrated optical isolator. However, conventional approaches based on application of magneto-optic materials to break the reciprocity and provide required isolation have significant challenges in terms of material processing and insertion loss. As a result, many magnetic-free approaches have been explored, including acousto-optics, optical nonlinearity, and electro-optics. However, to date, the realization of an integrated isolator with low insertion loss, high isolation ratio, broad bandwidth, and low power consumption on a monolithic material platform is still absent. Here we realize non-reciprocal traveling-wave EO-based isolator on thin-film LN, enabling maximum optical isolation of 48 dB and an on-chip insertion loss of 0.5 dB using a single-frequency microwave drive at 21-dBm RF power. The isolation ratio is verified to be larger than 37 dB across a tunable optical wavelength range from 1510 to 1630 nm. We verify that our hybrid DFB laser - LN isolator module successfully protects the single-mode operation and the linewidth of the DFB laser from reflection. Our result is a significant step towards a practical high-performance optical isolator on chip.
Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with high efficiency, low noise, and on an integrated chip. Here, we demonstrate both frequency shifting and bandwidth compression of nonclassical light using an integrated thin-film lithium niobate (TFLN) phase modulator. We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range ($\pm$ 641 GHz or $\pm$ 5.2 nm), enabling high visibility quantum interference between frequency-nondegenerate photon pairs. We further operate the modulator as a time lens and demonstrate over eighteen-fold (6.55 nm to 0.35 nm) bandwidth compression of single photons. Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.
Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications. The leading approaches for on-chip pulse generation rely on mode locking inside microresonator with either third-order nonlinearity or with semiconductor gain. These approaches, however, are limited in noise performance, wavelength tunability and repetition rates. Alternatively, sub-picosecond pulses can be synthesized without mode-locking, by modulating a continuous-wave (CW) single-frequency laser using a cascade of electro-optic (EO) modulators. This method is particularly attractive due to its simplicity, robustness, and frequency-agility but has been realized only on a tabletop using multiple discrete EO modulators and requiring optical amplifiers (to overcome large insertion losses), microwave amplifiers, and phase shifters. Here we demonstrate a chip-scale femtosecond pulse source implemented on an integrated lithium niobate (LN) photonic platform18, using cascaded low-loss electro-optic amplitude and phase modulators and chirped Bragg grating, forming a time-lens system. The device is driven by a CW distributed feedback (DFB) chip laser and controlled by a single CW microwave source without the need for any stabilization or locking. We measure femtosecond pulse trains (520 fs duration) with a 30-GHz repetition rate, flat-top optical spectra with a 10-dB optical bandwidth of 12.6 nm, individual comb-line powers above 0.1 milliwatt, and pulse energies of 0.54 picojoule. Our results represent a tunable, robust and low-cost integrated pulsed light source with CW-to-pulse conversion efficiencies an order of magnitude higher than achieved with previous integrated sources. Our pulse generator can find applications from ultrafast optical measurement to networks of distributed quantum computers.
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover -- from basic principles to the state of the art -- the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with 1.8-dB roll-off at 50 GHz. This demonstration represents a significant improvement in voltage-bandwidth limit, one that is comparable to that achieved when switching from legacy bulk to thin-film lithium niobate modulators. Leveraging the low-loss electrode geometry, we show that sub-volt modulators with $>$ 100 GHz bandwidth can be enabled.
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
A high-resolution broad-spectral-bandwidth spectrometer on a chip would create new opportunities for gas-phase molecular fingerprinting, especially in environmental sensing. A resolution high enough to observe transitions at atmospheric pressure and the simultaneous sensitive detection of multiple atoms or molecules are the key challenges. Here, an electro-optic microring-based dual-comb interferometer, fabricated on a low-loss lithium-niobate-on-insulator nanophotonic platform, demonstrates significant progress towards such an achievement. Spectra spanning 1.6 THz (53 cm-1) at a resolution of 10 GHz (0.33 cm-1) are obtained in a single measurement without requiring frequency scanning or moving parts. The frequency agility of the system enables spectrally-tailored multiplexed sensing, which allows for interrogation of non-adjacent spectral regions, here separated by 6.6 THz (220 cm-1), without compromising the signal-to-noise ratio.
A key challenge for quantum science and technology is to realise large-scale, precisely controllable, practical systems for non-classical secured communications, metrology and ultimately meaningful quantum simulation and computation. Optical frequency combs represent a powerful approach towards this, since they provide a very high number of temporal and frequency modes which can result in large-scale quantum systems. The generation and control of quantum optical frequency combs will enable a unique, practical and scalable framework for quantum signal and information processing. Here, we review recent progress on the realization of energy-time entangled optical frequency combs and discuss how photonic integration and the use of fiber-optic telecommunications components can enable quantum state control with new functionalities, yielding unprecedented capability.
Synthetic optical structures have enabled studies of various physical processes and discoveries of new phenomena in a controllable manner. Past realizations, using for example coupled optical waveguides, were however limited in size and dimensionality. Here we theoretically propose and experimentally demonstrate optical frequency crystals of arbitrary dimensions, formed by hundreds of coupled spectral modes within an on-chip electro-optic frequency comb. We show a direct link between the measured optical transmission spectrum and the density-of-state of frequency crystals, validated by measurements of one-, two-, three- and four-dimensional crystals with no restrictions to further expand the dimensionality. We measure signatures of quantum random walks and Bloch oscillations in the frequency domain of light in one- and two-dimensional synthetic lattices. Our work employs a quantum description of phase modulation11 to describe resonant electro-optic frequency combs, and shows that they enable the study of exotic crystal properties, topologies and quantum dynamics, while providing a versatile platform to manipulate quantum information in the optical frequency domain.
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (~ 1 dB) and low half-wave voltage over a large spectral range (3.5 - 4.5 V at 5 - 40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high electro-optic performance combined with the high RF power-handling ability (3.1 W) of our integrated phase modulator are crucial for future photonics and microwave systems.
Optical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communications and for precision metrology, timing and spectroscopy. To date, wide-spanning combs are most often generated by mode-locked lasers or dispersion-engineered resonators with third-order Kerr nonlinearity. An alternative comb generation method uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability. Previous EO combs, however, have been limited to narrow widths by a weak EO interaction strength and a lack of dispersion engineering in free-space systems. In this work, we overcome these limitations by realizing an integrated EO comb generator in a thin-film lithium niobate photonic platform that features a large electro-optic response, ultra-low optical loss and highly co-localized microwave and optical felds, while enabling dispersion engineering. Our measured EO frequency comb spans more than the entire telecommunications L-band (over 900 comb lines spaced at ~ 10 GHz), and we show that future dispersion engineering can enable octave-spanning combs. Furthermore, we demonstrate the high tolerance of our comb generator to modulation frequency detuning, with frequency spacing finely controllable over seven orders of magnitude (10 Hz to 100 MHz), and utilize this feature to generate dual frequency combs in a single resonator. Our results show that integrated EO comb generators, capable of generating wide and stable comb spectra, are a powerful complement to integrated Kerr combs, enabling applications ranging from spectroscopy to optical communications.
Recent development in quantum photonics allowed to start the process of bringing photonic-quantum-based systems out of the lab into real world applications. As an example, devices for the exchange of a cryptographic key secured by the law of quantum mechanics are currently commercially available. In order to further boost this process, the next step is to migrate the results achieved by means of bulky and expensive setups to miniaturized and affordable devices. Integrated quantum photonics is exactly addressing this issue. In this paper we briefly review the most recent advancements in the generation of quantum states of light (at the core of quantum cryptography and computing) on chip. In particular, we focus on optical microcavities, as they can offer a solution to the issue of low efficiency (low number of photons generated) typical of the materials mostly used in integrated platforms. In addition, we show that specifically designed microcavities can also offer further advantages, such as compatibility with existing telecom standard (thus allowing to exploit the existing fiber network) and quantum memories (necessary in turns to extend the communication distance), as well as longitudinal multimode character. This last property (i.e. the increased dimensionality necessary for describing the quantum state of a photon) is achieved thanks to the generating multiple photon pairs on a frequency comb corresponding to the microcavity resonances. Further achievements include the possibility to fully exploit the polarization degree of freedom also for integrated devices. These results pave the way to the generation of integrated quantum frequency combs, that in turn may find application as quantum computing platform.
Due to the high spontaneous emission coupled into the resonance mode in metallic nanolasers, there has been a debate concerning the coherence properties of this family of light sources. The second-order coherence function can unambiguously determine the nature of a given radiation. In this paper, an approach to measure the second-order coherence function for broad linewidth sources in the near-infrared telecommunication band is established based on a modified Hanbury Brown and Twiss configuration. Using this set-up, it is shown that metallic coaxial and disk-shaped nanolasers with InGaAsP multiple quantum well gain systems are indeed capable of generating coherent radiation.
We report an integrated all-optical radio frequency spectrum analyzer based on a ~ 4cm long doped silica glass waveguide, with a bandwidth greater than 2.5 THz. We use this device to characterize the intensity power spectrum of ultrahigh repetition rate mode-locked lasers at repetition rates up to 400 GHz, and observe dynamic noise related behavior not observable with other techniques.
We report an integrated photon pair source based on a CMOS-compatible microring resonator that generates multiple, simultaneous, and independent photon pairs at different wavelengths in a frequency comb compatible with fiber communication wavelength division multiplexing channels (200 GHz channel separation) and with a linewidth that is compatible with quantum memories (110 MHz). It operates in a self-locked pump configuration, avoiding the need for active stabilization, making it extremely robust even at very low power levels.