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Christian Schönenberger

Publications and source records attributed to Christian Schönenberger.

At least 19 recordsLinked to original sources

Multi-level π-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator

Using on-chip microwave measurements, we investigate multilevel $π$-junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure. In the multilevel regime, where several QD orbitals contribute simultaneously to superconducting transport, the Josephson ground state is no longer determined solely by the occupation of a single orbital. By combining DC transport and microwave techniques, we identify the qualitative signatures of multilevel $π$-junctions in both their gate-voltage dependence and microwave response. In particular, we observe combinations phase transitions that are sharp or smooth in gate voltage and which exhibit distinct inductive and dissipative signatures. Such multilevel Josephson transport has previously been observed primarily in exceptionally clean systems such as carbon nanotubes. Our results establish proximitized Ge as a platform for investigating hybrid superconductor/semiconductor physics and demonstrate the integration of gate-defined superconducting quantum devices with high-quality on-chip microwave resonators.

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High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures

Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they have so far been limited by sizable photon losses. Here, we report the fabrication and characterization of microwave resonators patterned in the Al thin film of an in-situ grown superconductor/semiconductor hybrid heterostructure (HS). The semiconductor part of this hybrid HS is grown on a commercial Ge substrate. We consistently achieve internal quality factors $Q_i>1000$, surpassing previous results on Ge QW heterostructures grown using the concept of a virtual Ge substrate on Si substrates. We reach $Q_i \approx 49000$ at single-photon occupation and a plateau of $Q_i \approx 20000$ at sub-one photon, an order of magnitude larger than any previously reported value of resonators on Ge QW structures at low power. We further characterize the thin Al film forming the resonator, extracting its kinetic inductance and superconducting gap, and studying its magnetic field dependence. Notably, the resonance remains well-defined up to in-plane magnetic fields of 850 mT. A hysteresis emerges in the out-of-plane magnetic field dependence, for both the resonance frequency and the quality factor, indicating an interesting interplay between vortex- and quasiparticle loss mechanisms.

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Radio-Frequency Detection of Fabry-Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2 Nanowires

We demonstrate phase-coherent transport in suspended long-channel Cd3As2 nanowire devices using both direct current (DC) transport and radio-frequency (RF) reflectometry measurements. By integrating Cd3As2 nanowires with on-chip superconducting LC resonators, we achieve sensitive detection of both resistance and quantum capacitance variations. In a long-channel device (L ~ 1.8 μm), clear Fabry-Pérot (FP) interference patterns are observed in both DC and RF measurements, provide strong evidence for ballistic electron transport. RF reflectometry reveals gate-dependent modulations of the resonance frequency, arising from quantum capacitance oscillations induced by changes in the density of states and FP interference. These oscillations exhibit a quasi-periodic structure that closely correlates with the FP patterns in DC transport measurements. In another device of a Cd3As2 nanowire Josephson junction (L ~ 730 nm, superconducting Al contacts), FP interference patterns are too weak to be resolved in DC conductance but are detectable using RF reflectometry. These results demonstrate the high quality of our Cd3As2 nanowires and the versatility of RF reflectometry, establishing their potential for applications in topological quantum devices, such as Andreev qubits or gatemon architectures.

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Entangled Photon-Pair Emission in Waveguide Circuit QED from a Cooper Pair Splitter

As a waveguide circuit QED architecture, we investigate theoretically the single-photon pair emission of a Cooper pair splitter composed of two double quantum dots, each coupled to a microwave transmission line. We find that this system can generate frequency-entangled photon pairs in the left and right transmission lines, specifically a superposition of two photon wave packets at different frequencies. The frequency entanglement of the two photons arises from the particle-hole coherent superposition (i.e., Andreev bound states) involving the delocalized entangled spin singlet. We also estimate a lower bound for the efficiency of entangled photon-pair generation, accounting for the presence of nonradiative processes such as phonon emissions. Our proposal is realistic and achievable with state-of-the-art techniques in quantum microwave engineering with electostatically defined semiconducting quantum dots.

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A coherence sweet spot with enhanced dipolar coupling

Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength and the qubit decoherence rate as a function of the in-plane magnetic-field orientation. We demonstrate a spin qubit sweet spot maximizing the dipolar coupling and simultaneously minimizing the decoherence. Our theoretical description postulates phonons as the most likely dominant noise source. The compromise-free sweet spot originates from the SOI suggesting that it is not restricted to this material platform, but might find applications in any material with SOI. These findings pave the way for enhanced engineering of these nanomaterials for next-generation qubit technologies.

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Double-dome Unconventional Superconductivity in Twisted Trilayer Graphene

Graphene moiré systems are ideal environments for investigating complex phase diagrams and gaining fundamental insights into the mechanisms underlying exotic states of matter, as they permit controlled manipulation of electronic properties. Magic-angle twisted trilayer graphene (MATTG) has emerged as a key platform to explore moiré superconductivity, owing to the robustness of its superconducting order and the displacement-field tunability of its energy bands. Recent measurements strongly suggest that superconductivity in MATTG is unconventional. Here, we report the first direct observation of double-dome superconductivity in MATTG. The temperature, magnetic field, and bias current dependence of the superconductivity of doped holes collectively show that it is significantly suppressed near moiré filling $ν^* = -2.6$, leading to a double dome in the phase diagram within a finite window of the displacement field. The temperature dependence of the normal-state resistance and the $I-V$ curves straddling $ν^*$ are suggestive of a phase transition and the potentially distinct nature of superconductivity in the two domes. Hartree-Fock calculations incorporating mild strain yield an incommensurate Kekulé spiral state whose effective spin polarization peaks in the regime where superconductivity is suppressed in experiments. This allows us to draw conclusions about the normal state as well as the unconventional nature of the superconducting order parameter.

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Large tunable kinetic inductance in a twisted graphene superconductor

Twisted graphene based moiré heterostructures host a flat band at the magic angles where the kinetic energy of the charge carriers is quenched and interaction effects dominate. This results in emergent phases such as superconductors and correlated insulators that are electrostatically tunable. We investigate superconductivity in twisted trilayer graphene (TTG) by integrating it as the weak link in a superconducting quantum interference device (SQUID). The measured current phase relation (CPR) yields a large and tunable kinetic inductance, up to 150 nH per square, of the electron and hole type intrinsic superconductors. We further show that the specific kinetic inductance and the critical current density are universally related via the superconducting coherence length, and extract an upper bound of 200 nm for the coherence length. Our work opens avenues for using graphene-based superconductors as tunable elements in superconducting circuits.

cond-mat.supr-con↗

Electron quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, \eg, snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

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Charge-4e supercurrent in a two-dimensional InAs-Al superconductor-semiconductor heterostructure

Superconducting qubits with intrinsic noise protection offer a promising approach to improve the coherence of quantum information. Crucial to such protected qubits is the encoding of the logical quantum states into wavefunctions with disjoint support. Such encoding can be achieved by a Josephson element with an unusual charge-4e supercurrent emerging from the coherent transfer of pairs of Cooper-pairs. In this work, we demonstrate the controlled conversion of a conventional charge-2e dominated to a charge-4e dominated supercurrent in a superconducting quantum interference device (SQUID) consisting of gate-tunable planar Josephson junctions (JJs). We investigate the ac Josephson effect of the SQUID and measure a dominant photon emission at twice the fundamental Josephson frequency together with a doubling of the number of Shapiro steps, both consistent with the appearance of charge-4e supercurrent. Our results present a step towards novel protected superconducting qubits based on superconductor-semiconductor hybrid materials.

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Coherent control of a few-channel hole type gatemon qubit

Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained in a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junctions is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.

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Performance of high impedance resonators in dirty dielectric environments

High-impedance resonators are a promising contender for realizing long-distance entangling gates between spin qubits. Often, the fabrication of spin qubits relies on the use of gate dielectrics which are detrimental to the quality of the resonator. Here, we investigate loss mechanisms of high-impedance NbTiN resonators in the vicinity of thermally grown SiO\textsubscript{2} and Al\textsubscript{2}O\textsubscript{3} fabricated by atomic layer deposition. We benchmark the resonator performance in elevated magnetic fields and at elevated temperatures and find that the internal quality factors are limited by the coupling between the resonator and two-level systems of the employed oxides. Nonetheless, the internal quality factors of high-impedance resonators exceed $10^3$ in all investigated oxide configurations which implies that the dielectric configuration would not limit the performance of resonators integrated in a spin-qubit device. Because these oxides are commonly used for spin qubit device fabrication, our results allow for straightforward integration of high-impedance resonators into spin-based quantum processors. Hence, these experiments pave the way for large-scale, spin-based quantum computers.

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Strong coupling between a microwave photon and a singlet-triplet qubit

Tremendous progress in few-qubit quantum processing has been achieved lately using superconducting resonators coupled to gate voltage defined quantum dots. While the strong coupling regime has been demonstrated recently for odd charge parity flopping mode spin qubits, first attempts towards coupling a resonator to even charge parity singlet-triplet spin qubits have resulted only in weak spin-photon coupling strengths. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. In contrast to conventional strategies, the quantum confinement is achieved using deterministically grown wurtzite tunnel barriers without resorting to electrical gating. Our experiments on even charge parity states and at large magnetic fields, allow to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. Most importantly, we find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with an electron spin-photon coupling strength of $g/2π=139\pm4$ MHz. Combined with the resonator decay rate $κ/2π=19.8\pm0.2$ MHz and the qubit dephasing rate $γ/2π=116\pm7$ MHz, our system achieves the strong coupling regime in which the coherent coupling exceeds qubit and resonator linewidth. These results pave the way towards large-scale quantum system based on singlet-triplet qubits.

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Dephasing in a crystal-phase defined double quantum dot charge qubit strongly coupled to a high-impedance resonator

Dephasing of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined semiconductor nanowire double quantum dot (DQD) charge qubit strongly coupled to a high-impedance resonator using radio-frequency (RF) reflectometry. Response of this hybrid system is measured both at a charge noise sensitive operation point (with finite DQD detuning) and at an insensitive point (so-called sweet spot with zero detuning). A theoretical model based on Jaynes-Cummings Hamiltonian matches the experimental results well and yields only a 10 % difference in dephasing rates between the two cases, despite that the sensitivity to detuning charge noise differs by a factor of 5. Therefore the charge noise is not the limiting factor for the coherence in this type of semiconducting nanowire qubits.

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Gate Tunable Josephson Diode in Proximitized InAs Supercurrent Interferometers

The Josephson diode (JD) is a non-reciprocal circuit element that supports a larger critical current in one direction compared to the other. This effect has gained a growing interest because of promising applications in superconducting electronic circuits with low power consumption. Some implementations of a JD rely on breaking the inversion symmetry in the material used to realize Josephson junctions (JJs), but two recent theoretical proposals have suggested that the effect can also be engineered by combining two JJs hosting highly transmitting Andreev bound states in a Superconducting Quantum Interference Device (SQUID) at a small, but finite flux bias [1, 2]. We have realized a SQUID with two JJs fabricated in a proximitized InAs two-dimensional electron gas (2DEG). We demonstrate gate control of the diode efficiency from zero up to around 30% at specific flux bias values which comes close to the maximum of approxiomately 40% predicated in Ref. [1]. The key ingredients to the JD effect in the SQUID arrangement is the presence of highly transmitting channels in the JJs, a flux bias and an asymmetry between the two SQUID arms.

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AC Josephson effect in a gate-tunable Cd$_3$As$_2$ nanowire superconducting weak link

Three-dimensional topological Dirac semimetals have recently gained significant attention, since they possess exotic quantum states. When constructing Josephson junctions utilizing these materials as the weak link, the fractional ac Josephson effect emerges in the presence of a topological supercurrent contribution. We investigate the ac Josephson effect in a Dirac semimetal Cd$_3$As$_2$ nanowire using two complementary methods: by probing the radiation spectrum and by measuring Shapiro patterns. With both techniques, we find that conventional supercurrent dominates at all investigated doping levels and that any potentially present topological contribution falls below our detection threshold. The inclusion of thermal noise in a resistively and capacitively shunted junction (RCSJ) model allows us to reproduce the microwave characteristics of the junction. With this refinement, we explain how weak superconducting features can be masked and provide a framework to account for elevated electronic temperatures present in realistic experimental scenarios.

cond-mat.supr-con↗

Current-phase relation of a WTe2 Josephson junction

When a topological insulator is incorporated into a Josephson junction, the system is predicted to reveal the fractional Josephson effect with a 4$π$-periodic current-phase relation. Here, we report the measurement of a $4π$-periodic switching current through an asymmetric SQUID, formed by the higher-order topological insulator WTe$_2$. Contrary to the established opinion, we show that a high asymmetry in critical current and negligible loop inductance are not sufficient by themselves to reliably measure the current-phase relation. Instead, we find that our measurement is heavily influenced by additional inductances originating from the self-formed PdTe$_{\text{x}}$ inside the junction. We therefore develop a method to numerically recover the current-phase relation of the system and find the $1.5\,μ\text{m}$ long junction to be best described in the short ballistic limit. Our results highlight the complexity of subtle inductance effects that can give rise to misleading topological signatures in transport measurements.

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Transparent Josephson Junctions in Higher-Order Topological Insulator WTe2 via Pd Diffusion

Highly transparent superconducting contacts to a topological insulator (TI) remain a persistent challenge on the route to engineer topological superconductivity. Recently, the higher-order TI WTe$_2$ was shown to turn superconducting when placed on palladium (Pd) bottom contacts, demonstrating a promising material system in pursuing this goal. Here, we report the diffusion of Pd into WTe$_2$ and the formation of superconducting PdTe$_x$ as the origin of observed superconductivity. We find an atomically sharp interface in vertical direction to the van der Waals layers between the diffusion crystal and its host crystal, forming state-of-the-art superconducting contacts to a TI. The diffusion is discovered to be non-uniform along the width of the WTe$_2$ crystal, with a greater extend along the edges compared to the bulk. The potential of this contacting method is highlighted in transport measurements on Josephson junctions by employing external superconducting leads.

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Origin of subgap states in normal-insulator-superconductor van der Waals heterostructures

Superconductivity in van der Waals materials, such as NbSe$_{2}$ and TaS$_{2}$, is fundamentally novel due to the effects of dimensionality, crystal symmetries, and strong spin-orbit coupling. In this work we perform tunnel spectroscopy on NbSe$_{2}$ by utilizing MoS$_{2}$ or hexagonal Boron Nitride (hBN) as a tunnel barrier. We observe subgap excitations and probe their origin by studying various heterostructure designs. We show that the edge of NbSe$_{2}$ hosts many defect states, which strongly couple to the superconductor and form Andreev bound states. Furthermore, by isolating the NbSe$_{2}$ edge we show that the subgap states are ubiquitous in MoS$_{2}$ tunnel barriers, but absent in hBN tunnel barriers, suggesting defects in MoS$_{2}$ as their origin. Their magnetic nature reveals a singlet or a doublet type ground state and based on nearly vanishing g-factors or avoided-crossing of subgap excitations we highlight the role of strong spin-orbit coupling.

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