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Christian Wenger

Publications and source records attributed to Christian Wenger.

4 recordsLinked to original sources

Sensor-Adaptive Infrared Spectral Reconstruction with Plug-and-Play Diffusion Priors

Hyperspectral sensing enables material identification; however, state-of-the-art spectrometers are costly and bulky, which limits their use in mobile applications. We address this by proposing sparse spectrum reconstruction from narrowband photocurrents using a pseudoinverse-guided diffusion model ({\Pi}GDM). With {\Pi}GDM we use a denoising diffusion probabilistic model (DDPM) to reconstruct the spectrum, which is trained on a large public spectral dataset to learn realistic spectral priors, eliminating the need for paired sensor measurements. At inference, {\Pi}GDM alternates reverse-diffusion denoising steps with pseudoinverse projection to enforce consistency with measured photocurrents via the calibrated responsivity matrices of sensors. Consequently, our method is sensor-adaptive: when detector arrays change, we simply substitute the responsivity matrix in the pseudoinverse projection without retraining of the diffusion model. The resulting computational spectrometer achieves 1.502% average estimation error, outperforming Tikhonov, Gaussian, compressive-sensing, and multilayer perceptron (MLP) baselines, while providing calibrated uncertainty estimates via Monte Carlo sampling from different random initializations of {\Pi}GDM. Summarizing, our approach offers an accurate, compact alternative for spectral recovery on resource-constrained platforms.

eess.SP

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge two-dimensional hole gas (2DHG) can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG - a prerequisite for the realization of spintronic devices - has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm. We observe a magnetoresistance signal for temperatures below 13 K possibly arising from successful spin injection. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.

cond-mat.mes-hall

Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.

cs.CR

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.

cond-mat.mes-hall