arXiv subjects

Christin Schmitt

Publications and source records attributed to Christin Schmitt.

14 recordsLinked to original sources

arXiv2026

All optical excitation of spin polarization in d-wave altermagnets

The recently discovered altermagnets exhibit collinear magnetic order with zero net magnetization but with unconventional spin-polarized d/g/i-wave band structures, expanding the known paradigms of ferromagnets and antiferromagnets. In addition to novel current-driven electronic transport effects, the unconventional time-reversal symmetry breaking in these systems also makes it possible to obtain a spin response to \emph{linearly polarized} fields in the optical frequency domain. We show through ab-initio calculations of the prototypical d-wave altermagnet RuO$_2$, with a symmetry combining twofold spin rotation with fourfold lattice rotation, $[C_2\|C_{4z}]$, that there is an optical analogue of a spin splitter effect, as the coupling to a linearly polarized exciting laser field makes the d-wave character of the altermagnet directly visible. By magneto-optical measurements on RuO$_2$ films of different thicknesses ranging from $2$ to $8\,$nanometers, we demonstrate the predicted connection of the linear polarization of an ultrashort pump pulse to the sign and magnitude of the optically excited electronic spin polarization in the ultrathin RuO$_2$ films. The possibility of exciting and controlling an electronic spin polarization by linearly polarized optical pulses in a compensated system is a unique consequence of the altermagnetic material properties. Our experimental results therefore establish an optical pump-probe based protocol for detection of altermagnetic characteristics in ultrathin RuO$_2$ films, but our all-optical approach should apply more generally to materials in this altermagnetic symmetry class.

cond-mat.mtrl-sci↗

arXiv2026

Giant orbital magnetoresistance in the antiferromagnet CoO driven by dynamic orbital angular momentum interaction

Recent predictions of orders of magnitude larger orbital current effects compared to spin currents have attracted significant interest. However, the full potential of giant orbital currents remains to be fully harnessed, since so far, the orbital currents need to be converted into spin currents before they can interact with the static magnetization that is dominated by spin angular momentum in conventional magnets. By using a magnet dominated by orbital angular momentum, we demonstrate a more than fifty-fold enhancement in orbital Hall magnetoresistance in CoO/Cu*, compared to conventional CoO/Pt. This is found to be driven by a unique interaction between dynamic orbital angular momentum from surface oxidized Cu* (i.e., the orbital current) and the static orbital angular momentum which constitutes the magnetic moments in the antiferromagnetic insulator CoO. A distinctive scattering mechanism for orbital currents at the CoO interface leads to a sign reversal in orbital magnetoresistance in CoO/Cu* compared to CoO/Pt. Our results show how by using orbital angular momentum-dominated materials such as CoO, we can harness the benefits of giant orbital currents that have not been possible using conventional spin-dominated magnets, for orbitronics-based devices, offering unprecedented energy efficiency for operations of antiferromagnets that combine ultimate stability with THz dynamics.

cond-mat.mtrl-sci↗

arXiv2026

Angle-Dependent Magnetoresistance Induced by Interface-Generated Spin Current in RuO$_2$/Permalloy Heterostructures

Altermagnets, a recently discovered class of magnetic materials exhibiting ferromagnetic-like spin-split bands and antiferromagnetic-like compensated magnetic order, have attracted significant interest for next-generation spintronic applications. Ruthenium dioxide (RuO2) has emerged as a promising altermagnetic candidate due to its compensated antiparallel magnetic order and strong spin-split electronic bands. However, recent experimental and theoretical reports also suggest that RuO2 may be non-magnetic in its ground state, underscoring the need for deeper investigations into its magnetic character. Specifically, the (100)-oriented RuO2 films are expected to generate spin currents with transverse spin polarization parallel to the Néel vector. Here, we investigate magnetotransport in epitaxial RuO2/Permalloy (Py) heterostructures to examine spin Hall magnetoresistance and interfacial effects generated in such systems. Our measurements reveal a pronounced negative angular-dependent magnetoresistance for variation of magnetic field direction perpendicular to the charge current direction. Detailed temperature-, magnetic field-, and crystallographic orientation-dependent measurements indicate that interface-generated spin current (IGSC) at the RuO2/Py interface predominantly governs the observed magnetoresistance. This shows that strong interface effects dominate over possible altermagnetic contributions from RuO2. Our results show that the role of interface-generated spin currents is crucial and should not be overlooked in studies of altermagnetic systems. A critical step in this direction is disentangling interfacial from altermagnetic contributions. The insight into interfacial contributions from altermagnetic influences is essential for the advancement of RuO2 based spintronic memory and sensing applications.

cond-mat.mes-hall↗

arXiv2025

Altermagnetic magnon transport in the \textit{d}-wave altermagnet \ch{LuFeO3}

Altermagnets exhibit a spin-split band structure despite having zero net magnetization, leading to special magnonic properties such as anisotropic magnon lifetimes and field-free spin transport. Here, we present a direct experimental demonstration of non-local magnon transport in the \textit{d}-wave altermagnet \ch{LuFeO3}, using both spin Seebeck and spin Hall effect-based injection and detection. We observe a non-local spin signal at zero magnetic field when the transport is along an altermagnetic direction, but not for transport along other directions. The observed sign reversal between two distinct altermagnetic directions in the spin Seebeck response demonstrates the altermagnetic nature of the magnon transport. In contrast, when transport is aligned along or perpendicular to the easy axis, both the first-harmonic signal and the sign-reversal effect vanish, consistent with symmetry-imposed suppression. These findings are supported by atomistic spin dynamics simulations, as well as linear spin wave theory calculations, which explain how our altermagnetic system hosts anisotropic spin Seebeck transport. Our results provide direct evidence of direction-dependent magnon splitting in altermagnets and highlight their potential for field-free magnonic spin transport, offering a promising pathway for low-power spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Revealing the Altermagnetism in Hematite via XMCD Imaging and Anomalous Hall Electrical Transport

Altermagnets are a class of magnetic materials that exhibit unconventional transport properties, such as an anomalous Hall effect, despite having compensated sublattice magnetic moments. In this study, we report fundamental experimental evidence of the altermagnetic nature of hematite ($α$-\ch{Fe2O3}), combining electrical transport with advanced XPEEM imaging with linear and circular dichroism contrast. Our measurements directly visualize the Néel vector's coupling to the crystal orientation, confirming hematite's altermagnetic order and its symmetry-driven transport behavior. Transport measurements reveal an anisotropic AHE with a pronounced crystal orientation dependence, including a sign inversion for specific Néel vector alignments. Supported by first-principles theoretical calculations, we explain how the interplay between collinear spin and crystal symmetry breaking drives the observed anomalous Hall effect. These findings establish hematite as an altermagnet, paving the way for experimental identification of altermagnetic materials and their integration into spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2023

Mechanism of electrical switching of ultra-thin CoO/Pt bilayers

We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing the results of these electrical measurements to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the reorientation of the Néel vector in ultra-thin CoO(4 nm). This allows us to determine that even opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin-orbit torque based switching mechanism that can dominate in very thin films.

cond-mat.mtrl-sci↗

arXiv2023

Laser-induced Creation of antiferromagnetic 180-degree domains in NiO/Pt bilayers

We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by imaging the created domain structure utilizing the X-ray magnetic linear dichroism effect. We study the effect of different laser polarizations on the domain formation and identify a polarization-independent creation of 180° domain walls and domains with 180° different Néel vector orientation. By varying the irradiation parameters, we determine the switching mechanism to be thermally induced and demonstrate the reversibility. We thus demonstrate experimentally the possibility to optically create antiferromagnetic domains, an important step towards future functionalization of all optical switching mechanisms in antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2023

Single device offset-free magnetic field sensing principle with tunable sensitivity and linear range based on spin-orbit-torques

We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal and demonstrate its validity with numerical investigations using macrospin simulations. The sensitivity and the measurable linear sensing range in the proposed concept can be tuned by either varying the effective magnetic anisotropy or by varying the magnitude of the injected currents. We show that undesired perturbation fields normal to the sensitive direction preserve the zero-offset property and only slightly modulate the sensitivity of the proposed sensor. Higher-harmonics voltage analysis on a Hall cross experimentally confirms the linearity and tunability via current strength. Additionally, the sensor exhibits a non-vanishing offset in the experiment which we attribute to the anomalous Nernst effect.

cond-mat.mes-hall↗

arXiv2022

Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt

The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $Δ= 98 \pm 10$ nm, demonstrating strong confinement.

cond-mat.mtrl-sci↗

arXiv2022

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2022

Indirect optical manipulation of the antiferromagnetic order of insulating NiO by ultrafast interfacial energy transfer

We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt layer into the NiO spin system. We propose that this energy transfer is mediated by a stochastic exchange scattering of hot Pt electrons at the Pt/NiO interface.

cond-mat.mtrl-sci↗

arXiv2021

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The Néel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.

cond-mat.mtrl-sci↗

arXiv2020

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

We demonstrate stable and reversible current induced switching of large-area ($> 100\;μm^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

cond-mat.mes-hall↗