arXiv subjects

Christina Dallo

Publications and source records attributed to Christina Dallo.

7 recordsLinked to original sources

arXiv2024

A Terahertz Bandwidth Nonmagnetic Isolator

Integrated photonics could bring transformative breakthroughs in computing, networking, imaging, sensing, and quantum information processing, enabled by increasingly sophisticated optical functionalities on a photonic chip. However, wideband optical isolators, which are essential for the robust operation of practically all optical systems, have been challenging to realize in integrated form due to the incompatibility of magnetic media with these circuit technologies. Here, we present the first-ever demonstration of an integrated non-magnetic optical isolator with terahertz-level optical bandwidth. The system is comprised of two acousto-optic frequency-shifting beam splitters which create a non-reciprocal multimode interferometer exhibiting high-contrast, nonreciprocal light transmission. We dramatically enhance the isolation bandwidth of this system by precisely dispersion balancing the paths of the interferometer. Using this approach, we demonstrate integrated nonmagnetic isolators with an optical contrast as high as 28 dB, insertion losses as low as -2.16 dB, and optical bandwidths as high as 2 THz (16 nm). We also show that the center frequency and direction of optical isolation are rapidly reconfigurable by tuning the relative phase of the microwave signals used to drive the acousto-optic beam splitters. With their CMOS compatibility, wideband operation, low losses, and rapid reconfigurability, such integrated isolators could address a key barrier to the integration of a wide range of photonic functionalities on a chip. Looking beyond the current demonstration, this bandwidth-scalable approach to nonmagnetic isolation opens the door to ultrawideband (>10 THz) isolators, which are needed to shrink state-of-the-art imaging, sensing, and communications systems into photonic integrated circuits.

physics.optics↗

arXiv2024

Non-resonant Bragg scattering four-wave-mixing at near visible wavelengths in low-confinement silicon nitride waveguides

Quantum state coherent frequency conversion processes-such as Bragg scattering four wave mixing (BSFWM)-hold promise as a flexible technique for networking heterogeneous and distant quantum systems. In this letter, we demonstrate BSFWM within an extended (1.2-m) low-confinement silicon nitride waveguide and show that this system has the potential for near unity quantum coherent frequency conversion in visible and near-visible wavelength ranges. Using sensitive heterodyne laser spectroscopy at low optical powers, we characterize the Kerr coefficient (~1.55 W^{-1} m^{-1}) and linear propagation loss (~0.0175 dB/cm) of this non-resonant waveguide system, revealing a record-high nonlinear figure of merit (NFM = gamma/alpha is approximately equal to 3.85 W^{-1}) for BSFWM of near visible light in non-resonant silicon nitride waveguides. We demonstrate how, at high yet achievable on-chip optical powers, this NFM would yield a comparatively large frequency conversion efficiency, opening the door to near-unity flexible frequency conversion without cavity enhancement and resulting bandwidth constraints.

physics.optics↗

arXiv2022

Intermodal strong coupling and wideband, low-loss isolation in silicon

Strong coupling enables a diverse set of applications that include optical memories, non-magnetic isolators, photonic state manipulation, and signal processing. To date, strong coupling in integrated platforms has been realized using narrow-linewidth high-Q optical resonators. In contrast, here we demonstrate wideband strong coupling between two photonic bands. The indirect interband photonic transition is controlled by electrically driving phonons in a linear silicon waveguide. Under large acoustic drive, the system features a Rabi-like energy exchange between two waveguide modes, demonstrating strong coupling. When tuned to unity energy conversion, our system unlocks a set of powerful applications, including optical modulators, routers and filters. In particular, we demonstrate a low loss (-2.08 dB) acousto-optic modulator (AOM) with pump suppression ratio > 55 dB. We also reconfigure our system to demonstrate a non-magnetic, low-loss (< 1 dB) and broadband (59 GHz 10 dB isolation bandwidth) optical isolator.

physics.optics↗

arXiv2022

110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.

physics.optics↗

arXiv2022

High-Performance Silicon Photonic Single-Sideband Modulators for Cold Atom Interferometry

The most complicated and challenging system within a light-pulse atom interferometer (LPAI) is the laser system, which controls the frequencies and intensities of multiple laser beams over time to configure quantum gravity and inertial sensors. The main function of an LPAI laser system is to perform cold-atom generation, state-preparation, state-selective detection and to generate coherent two-photon process for the light-pulse sequence. Substantial miniaturization and ruggedization of the laser system can be achieved by bringing most key functions of the laser system onto photonic integrated circuit (PIC). We demonstrate a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nm, which can dynamically frequency shift within the LPAI. With independent RF-channel control, we study the imbalances in both the optical and RF phases/amplitudes to reach 30 dB carrier-suppression, unprecedented 47.8 dB sideband-suppression at peak conversion-efficiency: -6.846 dB (20.7 %). Using a silicon photonic SSB-modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, $g \approx 9.77 \pm 0.01 \,\rm{m/s^2}$, in a Rubidium ($^{87}$Rb) atom system.

physics.optics↗

arXiv2021

Characterization of Suspended Membrane Waveguides towards a Photonic Atom Trap Integrated Platform

We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 um span) to nearly 30 mW (125 um span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.

quant-ph↗

arXiv2018

Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth

Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher RF frequencies. Bulk Lithium Niobate (LN) and etched LN modulators can scale to higher bandwidths, but are not integrated with the Si photonics fabrication process adopted widely over the last decade. As an alternative, an ultra-high-bandwidth Mach-Zehnder EOM based on Si photonics is shown, made using conventional lithography and wafer-scale fabrication, bonded to an unpatterned LN thin film. This hybrid LN-Si MZM achieves beyond 100 GHz 3-dB electrical bandwidth. Our design integrates silicon photonics light input/output and optical components, including directional couplers, low-radius bends, and path-length difference segments, realized in a foundry Si photonics process. The use of a simple low-temperature (200C) back-end integration process to bond a postage-stamp-sized piece of LN where desired, and achieving light routing into and out of LN to harness its electro-optic property without any etching or patterning of the LN film, may be broadly-useful strategies for advanced integrated opto-electronic microchips.

physics.optics↗