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Christina E. Henzinger

Publications and source records attributed to Christina E. Henzinger.

2 recordsLinked to original sources

Controlled localization of anyons in a graphene quantum Hall interferometer

Exchange statistics are a fundamental principle of quantum mechanics, dictating the symmetry of identical particle wavefunctions and thereby enabling emergent phenomena of many-body quantum states. The exchange-induced unitary transformation of both abelian and non-abelian anyonic wavefunctions can be probed using electronic fractional quantum Hall (FQH) interferometers, where quasiparticles propagating along the interfering FQH edge braid with those localized within the interferometer. Here, we add a gate-controlled dot/anti-dot in the center of a bilayer graphene FQH interferometer cavity to tune the number of enclosed anyons. We observe hundreds of controlled phase slips in the diagonal conductance across the interferometer for both abelian and non-abelian states, consistent with discrete changes in the localized quasiparticle population. For abelian anyons, the observed phase slips agree with the theoretically expected value. At half filling, our results suggest the interfering edge carries charge $|e^*/e| = 1/2$ abelian excitations, whereas charge $|e^*/e| = 1/4$ putative non-abelian anyons remain localized in the interferometer cavity. Controlling the population of localized $e/4$ anyons in an interferometer marks a significant milestone towards observing their non-local exchange statistics and building a fault tolerant topological qubit based on non-abelian anyon manipulation.

cond-mat.mes-hall↗

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation.

cond-mat.mtrl-sci↗