arXiv subjects

Christine Schedel

Publications and source records attributed to Christine Schedel.

5 recordsLinked to original sources

arXiv2022

Pitfalls in Determining the Electrical Bandwidth of Non-Ideal Nanomaterials for Photodetection

The electrical 3 dB bandwidth is regularly used as a measure for the response speed of a photodetector and is estimated via various approaches in literature, ranging from direct measurements to gauged values via approximations. Great care must be taken when comparing these 3 dB bandwidths, since approximations are only strictly valid for ideal circuits. This paper demonstrates that, for typical photodetectors based on new emerging nanostructured materials, namely quantum dots and transition metal dichalcogenides, the bandwidth can deviate up to 10^3 depending on the chosen approach for the bandwidth specification.

cond-mat.mtrl-sci↗

arXiv2022

Substrate Effects on the Speed Limiting Factor of WSe$_2$ Photodetectors

We investigate the time-resolved photoelectric response of WSe$_2$ crystals on common glass and flexible polyimide substrates to determine the effect of the dielectric environment on the speed of the photodetectors. We show that varying the substrate material can alter the speed-limiting mechanism: while the detectors on polyimide are RC limited, those on glass are limited by slower excitonic diffusion processes. We attribute this to a shortening of the depletion layer at the metal electrode/WSe2 interface caused by the higher dielectric screening of glass compared to polyimide. The photodetectors on glass show a tunable bandwidth which can be increased to 2.6 MHz with increasing the electric field.

cond-mat.mtrl-sci↗

arXiv2021

Sub-ns intrinsic response time of PbS nanocrystal IR-photodetectors

Colloidal nanocrystals (NCs), especially lead sulfide NCs, are promising candidates for solution-processed next-generation photodetectors with high-speed operation frequencies. However, the intrinsic response time of PbS-NC photodetectors, which is the material-specific physical limit, is still elusive, as the reported response times are typically limited by the device geometry. Here, we use the two-pulse coincidence photoresponse technique to identify the intrinsic response time of 1,2-ethanedithiol-functionalized PbS-NC photodetectors after fs-pulsed 1560 nm excitation. We obtain an intrinsic response time of ~1 ns, indicating an intrinsic bandwidth of ~0.55 GHz as the material-specific limit. Examination of the dependence on laser power, gating, bias, temperature, channel length and environmental conditions suggest that Auger recombination, assisted by NC-surface defects, is the dominant mechanism. Accordingly, the intrinsic response time might further be tuned by specifically controlling the ligand coverage and trap states. Thus, PbS-NC photodetectors are feasible for gigahertz optical communication in the third telecommunication window.

cond-mat.mtrl-sci↗

arXiv2021

Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc beta-tetraaminophthalocyanine (Zn4APc) on three different substrates, namely silicon with 230 nm SiO2 dielectric, glass as well as polyimide. While Si/SiO2(230 nm) is not suitable for any transient photocurrent characterization due to an interfering photocurrent response of the buried silicon, we find that polyimide substrates invoke the larger optical bandwidth with 85 kHz vs. 67 kHz for the same quantum dot thin film on glass. Upon evaluation of the transient photocurrent, we find that the photoresponse of the CdSe quantum dot films can be described as a combination of carrier recombination and fast trapping within 2.7 ns, followed by slower multiple trapping events. The latter are less pronounced on polyimide, which leads to the higher bandwidth. We show that all devices are RC-time limited and that improvements of the photoresistance are the key to further increasing the bandwidth.

cond-mat.mes-hall↗

arXiv2019

A Dye-Sensitized CdSe Nanocrystal Optical Transistor with High ON/OFF Ratio in the First Telecom Window with 74 ns Rise Time

We report an optically gated transistor composed of CdSe nanocrystals (NCs), sensitized with the dye Zinc beta-tetraaminophthalocyanine for operation in the first telecom window. This device shows a high ON/OFF ratio of six orders of magnitude in the red spectral region and an unprecedented 4.5 orders of magnitude at 847 nm. By transient absorption spectroscopy, we reveal that this unexpected infrared sensitivity is due to electron transfer from the dye to the CdSe NCs within 5 ps. We show by time-resolved photocurrent measurements that this enables fast rise times during near-infrared optical gating of 74 ns. Electronic coupling and accelerated non-radiative recombination of charge carriers at the interface between the dye and the CdSe NCs are further corroborated by steady-state and time-resolved photoluminescence measurements. Field-effect transistor measurements indicate that the increase in photocurrent upon laser illumination is mainly due to the increase in carrier concentration while the mobility remains unchanged. Our results illustrate that organic dyes as ligands for NCs invoke new optoelectronic functionalities, such as fast optical gating at sub-bandgap optical excitation energies.

cond-mat.mtrl-sci↗