arXiv subjects

Christoph Freysoldt

Publications and source records attributed to Christoph Freysoldt.

30 records · Page 2Linked to original sources

arXiv2021

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

Cu(In,Ga)Se2 (CIGSe)-based solar cells are promising candidates for efficient sunlight harvesting. However, their complex composition and microstructure can change under operation conditions, for instance heating from sun light illumination can lead to a degradation in performance. Here, we investigate the thermally-induced degradation processes in a set of CIGSe-based solar cells that were annealed at temperatures between 150C and 300C. Using correlative atom probe tomography (APT)/transmission electron microscope (TEM), we found that the buffer-absorber interface is not sharp but consists of an interfacial zone (2 - 6.5 nm wide) where a gradient of constituent elements belonging to the CdS buffer and CIGSe absorber appears. An enhanced short-range Cd in-diffusion inside the CIGSe was observed whenever a low Ga/(Ga+In) ratio occurred at the interface. This might indicate the presence of Ga vacancies as a channeling defect for Cd in-diffusion inside the CIGSe layer leading to a buried pn-homojunction. We evidence that a considerable amount of Cd is found inside the CIGSe layer at annealing temperatures higher than 150C. Further investigations of the elemental redistribution inside the CIGSe layer combined with C-V measurements support the formation of CdCu donor like defects deep inside the p-type CIGSe which lead to a strong compensation of the CIGSe layer and hence to strong deterioration of cell efficiency at annealing temperatures higher than 200C. Hence, understanding the degradation processes in Cu(In,Ga)Se2 (CIGSe)-based solar cells opens new opportunities for further improvement of the long-term device performance.

physics.app-ph↗

arXiv2021

Status and direction of atom probe analysis of frozen liquids

Imaging of liquids and cryogenic biological materials by electron microscopy has been recently enabled by innovative approaches for specimen preparation and the fast development of optimised instruments for cryo-enabled electron microscopy (cryo-EM). Yet, Cryo-EM typically lacks advanced analytical capabilities, in particular for light elements. With the development of protocols for frozen wet specimen preparation, atom probe tomography (APT) could advantageously complement insights gained by cryo-EM. Here, we report on different approaches that have been recently proposed to enable the analysis of relatively large volumes of frozen liquids from either a flat substrate or the fractured surface of a wire. Both allowed for analysing water ice layers which are several microns thick consisting of pure water, pure heavy-water and aqueous solutions. We discuss the merits of both approaches, and prospects for further developments in this area. Preliminary results raise numerous questions, in part concerning the physics underpinning field evaporation. We discuss these aspects and lay out some of the challenges regarding the APT analysis of frozen liquids.

cond-mat.mtrl-sci↗

arXiv2020

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calculations to compute formation energies and charge transition levels associated with sulfur vacancies in monolayer and layered bulk MoS$_2$. We investigate the convergence of these defect properties with respect to vacuum spacing, in-plane supercell dimensions, and different levels of theory. We also analyze the electronic structures of the defects in different charge states to gain insights into the effect of defects on bonding and magnetism. We predict that both vacancy structures undergo a Jahn-Teller distortion, which helps stabilize the sulfur vacancy in the $-1$ charged state.

cond-mat.mtrl-sci↗

arXiv2020

Ab initio Description of Bond-Breaking in Large Electric Fields

Strong ($10^{10}$ V/m) electric fields capable of inducing atomic bond-breaking represent a powerful tool for surface chemistry. However, their exact effects are difficult to predict due to a lack of suitable tools to probe their associated atomic-scale mechanisms. Here we introduce a generalized dipole correction for charged repeated-slab models that controls the electric field on both sides of the slab, thereby enabling direct theoretical treatment of field-induced bond-breaking events. As a prototype application, we consider field evaporation from a kinked W surface. We reveal two qualitatively different desorption mechanisms that can be selected by the magnitude of the applied field.

cond-mat.mtrl-sci↗

arXiv2020

Finite-size corrections for defect-involving vertical transitions in supercell calculations

A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN, GaN, MgO, and 3C-SiC. Without any corrections, the absolute errors are around 1 eV with moderate size supercells in most cases. In contrast, when our correction method is adopted, the absolute errors are reduced and become less than 0.12 eV in all the cases. Our correction scheme is general and will have the potential for wide application as it is adaptive for evaluating various quantities at fixed geometry, as represented by those relevant to the generalized Koopmans' theorem.

cond-mat.mtrl-sci↗

arXiv2019

Imaging individual solute atoms at crystalline imperfections in metals

Directly imaging all atoms constituting a material and, maybe more importantly, crystalline defects that dictate materials' properties, remains a formidable challenge. Here, we propose a new approach to chemistry-sensitive field-ion microscopy (FIM) combining contrast interpretation from density-functional theory (DFT) and elemental identification enabled by time-of-flight mass-spectrometry and data mining. Analytical-FIM has true atomic resolution and we demonstrate how the technique can reveal the presence of individual solute atoms at specific positions in the microstructure. The performance of this new technique is showcased in revealing individual Re atoms at crystalline defects formed in Ni during creep deformation. The atomistic details offered by A-FIM allowed us to directly compare our results with simulations, and to tackle a long-standing question of how Re extends lifetime of Ni-based superalloys in service at high-temperature.

cond-mat.mtrl-sci↗

arXiv2019

Ab initio vibrational free energies including anharmonicity for multicomponent alloys

A density-functional-theory based approach to efficiently compute numerically exact vibrational free energies - including anharmonicity - for chemically complex multicomponent alloys is developed. It is based on a combination of thermodynamic integration and a machine-learning potential. We demonstrate the performance of the approach by computing the anharmonic free energy of the prototypical five-component VNbMoTaW refractory high entropy alloy.

cond-mat.mtrl-sci↗

arXiv2009

Controlling polarization at insulating surfaces: quasiparticle calculations for molecules adsorbed on insulator films

By means of quasiparticle-energy calculations in the G0W0 approach, we show for the prototypical insulator/semiconductor system NaCl/Ge(001) that polarization effects at the interfaces noticeably affect the excitation spectrum of molecules adsorbed on the surface of the NaCl films. The magnitude of the effect can be controlled by varying the thickness of the film, offering new opportunities for tuning electronic excitations in e.g. molecular electronics or quantum transport. Polarization effects are visible even for the excitation spectrum of the NaCl films themselves, which has important implications for the interpretation of surface science experiments for the characterization of insulator surfaces.

cond-mat.mtrl-sci↗

arXiv2008

Screening in 2D: GW calculations for surfaces and thin films using the repeated-slab approach

In the context of photoelectron spectroscopy, the $GW$ approach has developed into the method of choice for computing excitation spectra of weakly correlated bulk systems and their surfaces. To employ the established computational schemes that have been developed for three-dimensional crystals, two-dimensional systems are typically treated in the repeated-slab approach. In this work we critically examine this approach and identify three important aspects for which the treatment of long-range screening in two dimensions differs from the bulk: (1) anisotropy of the macroscopic screening (2) $\mathbf k$-point sampling parallel to the surface (3) periodic repetition and slab-slab interaction. For prototypical semiconductor (silicon) and ionic (NaCl) thin films we quantify the individual contributions of points (1) to (3) and develop robust and efficient correction schemes derived from the classic theory of dielectric screening.

cond-mat.mtrl-sci↗

arXiv2007

Ultrathin oxides: bulk-oxide-like model surfaces or unique films?

To better understand the electronic and chemical properties of wide-gap oxide surfaces at the atomic scale, experimental work has focused on epitaxial films on metal substrates. Recent findings show that these films are considerably thinner than previously thought. This raises doubts about the transferability of the results to surface properties of thicker films and bulk crystals. By means of density-functional theory and approximate GW corrections for the electronic spectra we demonstrate for three characteristic wide-gap oxides (silica, alumina, and hafnia) the influence of the substrate and highlight critical differences between the ultrathin films and surfaces of bulk materials. Our results imply that monolayer-thin oxide films have rather unique properties.

cond-mat.mtrl-sci↗

arXiv2006

Dielectric anisotropy in the GW space-time method

Excited-state calculations, notably for quasiparticle band structures, are nowadays routinely performed within the GW approximation for the electronic self-energy. Nevertheless, certain numerical approximations and simplifications are still employed in practice to make the computations feasible. An important aspect for periodic systems is the proper treatment of the singularity of the screened Coulomb interaction in reciprocal space, which results from the slow 1/r decay in real space. This must be done without introducing artificial interactions between the quasiparticles and their periodic images in repeated cells, which occur when integrals of the screened Coulomb interaction are discretised in reciprocal space. An adequate treatment of both aspects is crucial for a numerically stable computation of the self-energy. In this article we build on existing schemes for isotropic screening and present an extension for anisotropic systems. We also show how the contributions to the dielectric function arising from the non-local part of the pseudopotentials can be computed efficiently. These improvements are crucial for obtaining a fast convergence with respect to the number of points used for the Brillouin zone integration and prove to be essential to make GW calculations for strongly anisotropic systems, such as slabs or multilayers, efficient.

cond-mat.mtrl-sci↗

arXiv2005

Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound semiconductors

We report quasiparticle-energy calculations of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group-III-nitrides. By applying GW as perturbation to the ground state of the fictitious, non-interacting Kohn-Sham electrons of density-functional theory (DFT) we systematically study the electronic structure of zinc-blende GaN, ZnO, ZnS and CdS. Special emphasis is put on analysing the role played by the cation semicore d-electrons that are explicitly included as valence electrons in our pseudopotential approach. Unlike in the majority of previous GW studies, which are almost exlusively based on ground state calculations in the local-density approximation (LDA), we combine GW with exact-exchange DFT calculations in the optimised-effective potential approach (OEPx). This is a much more elaborate and computationally expensive approach. However, we show that applying the OEPx approach leads to an improved description of the d-electron hybridisation compared to the LDA. Moreover we find that it is essential to use OEPx pseudopotentials in order to treat core-valence exchange consistently. Our OEPx based quasiparticle valence bandstructures are in good agreement with available photoemission data in contrast to the ones based on the LDA. We therefore conclude that for these materials OEPx constitutes the better starting point for subsequent GW calculations.

cond-mat.mtrl-sci↗