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Christoph Schlüter

Publications and source records attributed to Christoph Schlüter.

3 recordsLinked to original sources

Epitaxial growth and magnetic phase transitions in non-centrosymmetric EuPdSi$_3$ thin films

Non-centrosymmetric magnetic materials are a promising platform for stabilizing chiral spin textures, such as skyrmions and cycloidal magnetic states. This is particularly true in epitaxial thin film geometries, where strain and interface effects offer additional control. Herein, we report on the first epitaxial thin films of EuPdSi$_3$ grown by molecular beam epitaxy on MgO(001). X-ray diffraction confirms an epitaxial relationship of tetragonal EuPdSi$_3$ in the BaNiSn$_3$ structure with out-of-plane c-axis orientation and parallel in-plane a-axes. Hard x-ray photoelectron spectroscopy reveals a stable Eu valence of 2.0, yielding a large magnetic moment of approximately 7 $μ_B$ per Eu atom in accordance with Hund's rule. Owing to the non-centrosymmetric crystal structure, non-collinear magnetic states such as Néel-type skyrmions and cycloidal phases are allowed by symmetry. Electronic transport measurements reveal two magnetic phase transitions at 19 K and 15 K in zero applied field. Under magnetic fields applied along the crystallographic [100] and [001] directions, distinct temperature dependent magnetic phases emerge, demonstrating the sensitivity of the magnetic ground state to field orientation in epitaxial EuPdSi$_3$ thin films.

cond-mat.mtrl-sci↗

Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)

Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.

cond-mat.mtrl-sci↗

Dual nature of 5$f$ electrons in the isostructural UM$_2$Si$_2$ family: from antiferro- to Pauli paramagnetism via hidden order

Using inelastic x-ray scattering beyond the dipole limit and hard x-ray photoelectron spectroscopy we establish the dual nature of the U $5f$ electrons in UM$_2$Si$_2$ (M = Pd, Ni, Ru, Fe), regardless of their degree of delocalization. We have observed that the compounds have in common a local atomic-like state that is well described by the U $5f^2$ configuration with the $Γ_1^{(1)}$ and $Γ_2$ quasi-doublet symmetry. The amount of the U 5$f^3$ configuration, however, varies considerably across the UM$_2$Si$_2$ series, indicating an increase of U5$f$ itineracy in going from M=Pd to Ni to Ru, and to the Fe compound. The identified electronic states explain the formation of the very large ordered magnetic moments in UPd$_2$Si$_2$ and UNi$_2$Si$_2$, the availability of orbital degrees of freedom needed for the hidden order in URu$_2$Si$_2$ to occur, as well as the appearance of Pauli paramagnetism in UFe$_2$Si$_2$. A unified and systematic picture of the U$M_2$Si$_2$ compounds may now be drawn, thereby providing suggestions for new experiments to induce hidden order and/or superconductivity in U compounds with the tetragonal body-centered ThCr$_2$Si$_2$ structure.

cond-mat.str-el↗