arXiv subjects

Christoph Thomas Klein

Publications and source records attributed to Christoph Thomas Klein.

3 recordsLinked to original sources

arXiv2026

Impact of Cold Noise on the tracking performance of ATLAS ITk short strip barrel modules using a charged particle beam

The inner tracking system of the ATLAS experiment will be upgraded to a full silicon detector in 2030 for HL-LHC. The new tracking system is called ITk, the Inner Tracker. It is required to be operable with efficiency higher than 99\% and noise hit occupancy smaller than 0.1\%. During the pre-production phase of the ITk project, many short-strip modules were observed to exhibit so-called "Cold Noise (CN)", wherein clusters of strips displayed very high noise when the modules were operated at temperatures below~$-35\degree$C. To investigate the CN impact and ensure the quality of module production, huge amount of effort have been put in by the collaboration. This paper focuses on the impact of CN on the tracking performance by examining two short strip modules that exhibit CN: one is non-irradiated, while the other one has been irradiated to the maximum expected end-of-lifetime fluence. For each module, the global and single strip tracking performance are evaluated.

physics.ins-det↗

arXiv2025

TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors

The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.

physics.ins-det↗

arXiv2024

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages over hybrid sensors, Monolithic Active Pixel Sensors (MAPS) fabricated in CMOS technology have been increasingly implemented in HEP experiments. In all cases, their use in higher radiation areas (HL-LHC and beyond) will require options to improve their radiation hardness and time resolution. These aspects demand a deep understanding of their radiation damage and reliable models to predict their behaviours at high fluences. As a first step, we fabricated several Schottky and n-on-p diodes, to allow a comparison of results and provide a backup solution for test devices, on 6 or 4-inch p-type silicon wafers with 50 μm epitaxial thickness and of doping concentration as they are normally used in HEP detectors and CMOS MAPS devices. In this paper, details of the design and fabrication process, along with test results of the fabricated devices before irradiation, will be provided. Additional test results on irradiated devices will be provided in subsequent publications.

physics.ins-det↗