arXiv subjects

Christophe Adessi

Publications and source records attributed to Christophe Adessi.

7 recordsLinked to original sources

arXiv2025

First-principles calculations of thermal transport at metal/silicon interfaces: evidence of interfacial electron-phonon coupling

With the increasing miniaturization of electronic components and the need to optimize thermal management, it has become essential to understand heat transport at metal/semiconductor interfaces. While it has been recognized decades ago that an electron phonon channel may take place at metal-semiconductor interfaces, its existence is still controversial. Here, we investigate thermal transport at metal-silicon interfaces using the combination of first principles calculations and nonequilibrium Green's function (NEGF). We explain how to correct NEGF formalism to account for the out of equilibrium nature of the energy carriers in the vicinity of the interface. The relative corrections to the equilibrium distribution are shown to arise from the spectral mean free paths of silicon and may reach 15 percents. Applying these corrections, we compare the predictions of NEGF to available experimental data for Au/Si, Pt/Si and Al/Si interfaces. Based on this comparison, we infer the value of the electron phonon interfacial thermal conductance by employing the two temperature model. We find that interfacial thermal transport at Au/Si interfaces is mainly driven by phonon phonon processes, and that electron phonon processes play a negligible role in this case. By contrast, for Al/Si interfaces, we show that phonon-phonon scattering alone can not explain the experimental values reported so far, and we estimate that the electron-phonon interfacial conductance accounts for one third of the total conductance. This work demonstrates the importance of the electron-phonon conductance at metal-silicon interfaces and calls for systematic experimental investigation of thermal transport at these interfaces at low temperatures. It paves the way for an accurate model to predict the conductance associated to the interfacial electron phonon channel.

cond-mat.mtrl-sci↗

arXiv2024

Lattice thermal conductivity and mechanical properties of the single-layer penta-NiN2 explored by a deep-learning interatomic potential

Penta-NiN2, a novel pentagonal 2D sheet with potential nanoelectronic applications, is investigated in terms of its lattice thermal conductivity, stability, and mechanical behavior. A deep learning interatomic potential (DLP) is firstly generated from ab-initio molecular dynamics (AIMD) data and then utilized for classical molecular dynamics simulations. The DLP's accuracy is verified, showing strong agreement with AIMD results. The dependence of thermal conductivity on size, temperature, and tensile strain, reveals important insights into the material's thermal properties. Additionally, the mechanical response of penta-NiN2 under uniaxial loading is examined, yielding a Young's modulus of approximately 368 GPa. The influence of vacancy defects on mechanical properties is analyzed, demonstrating significant reduction in modulus, fracture stress, and ultimate strength. This study also investigates the influence of strain on phonon dispersion relations and phonon group velocity in penta-NiN2, shedding light on how alterations in the atomic lattice affect the phonon dynamics and, consequently, impact the thermal conductivity. This investigation showcases the ability of deep learning based interatomic potentials in studying the properties of 2D Penta-NiN2.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced thermal conductance at interfaces between gold and amorphous silicon and amorphous silica

Heat transfer at the interface between two materials is becoming increasingly important as the size of electronic devices shrinks. Most studies concentrate on the interfacial thermal conductance between either crystalline-crystalline or amorphous-amorphous materials. Here, we investigate the interfacial thermal conductance at crystalline-amorphous interfaces using non-equilibrium molecular dynamics simulations. Specifically, gold and two different materials, silicon and silica, in both their crystalline and amorphous structures, have been considered. The findings reveal that the interfacial thermal conductance between amorphous structures and gold is significantly higher as compared to crystalline structures for both planar and rough interfaces ($\approx$ 152 MW/(m$^2$K) for gold-amorphous silicon and $\approx$ 56 MW/(m$^2$K) for gold-crystalline silicon). We explain this increase by two factors~:~the relative commensurability between amorphous silicon/silica and gold leads to enhanced bonding and cross-correlations of atomic displacements at the interface, contributing to enhance phonon elastic transmission. Inelastic phonon transmission is also enhanced due to the relative larger degree of anharmonicity characterizing gold-amorphous silicon/silica. We also show that all the vibrational modes that participate to interfacial heat transfer are delocalized and use the Ioffe-Regel (IR) criterion to separate the contributions of propagating~(propagons) and non-propagating modes~(diffusons). In particular, we demonstrate that, while at gold-amorphous silicon interfaces elastic phonon scattering involves propagons and inelastic phonon scattering involves a mixture of propagons and diffusons, in gold-amorphous silica, all modes transmitting energy at the interface are diffusons.

cond-mat.mes-hall↗

arXiv2022

Atomistic simulation of phonon heat transport across metallic nanogaps

The understanding and modeling of the heat transport across nanometer and sub-nanometer gaps where the distinction between thermal radiation and conduction become blurred remains an open question. In this work, we present a three-dimensional atomistic simulation framework by combining the molecular dynamics (MD) and phonon non-equilibrium Green's function (NEGF) methods. The relaxed atomic configuration and interaction force constants of metallic nanogaps are generated from MD as inputs into harmonic phonon NEGF. Phonon tunneling across gold-gold and copper-copper nanogaps is quantified, and is shown to be a significant heat transport channel below gap size of 1nm. We demonstrate that lattice anharmonicity contributes to within 20-30% of phonon tunneling depending on gap size, whereas electrostatic interactions turn out to have negligible effect for the small bias voltage typically used in experimental measurements. This work provides detailed information of the heat current spectrum and interprets the recent experimental determination of thermal conductance across gold-gold nanogaps. Our study contributes to deeper insight into heat transport in the extremely near-field regime, as well as hints for the future experimental investigation.

cond-mat.mes-hall↗

arXiv2019

Investigating the high-temperature thermoelectric properties of n-type rutile TiO$_2$

Transition metal oxides are considered promising thermoelectric materials for harvesting high-temperature waste heat due to their stability, abundance and low toxicity. Despite their typically strong ionic character, they can exhibit surprisingly high power factors $σS^2$, as in n-type SrTiO$_3$ for instance. Thus, it is worth examining other transition metal oxides that might surpass the performances of SrTiO$_3$. This theoretical paper investigates the thermoelectric properties of n-type rutile TiO$_2$, which is the most stable phase of titanium oxide up to 2000 K. The electronic structure is obtained through ab initio calculations, while the prominent features of strong electron-phonon interaction and defects states are modelled using a small number of parameters. The theoretical results are compared with a wealth of experimental data from the literature, yielding very good agreements over a wide range of carrier concentrations. This validates the hypothesis of band conduction in rutile TiO$_2$ and allows the prediction of the high-temperature thermoelectric properties.

cond-mat.mtrl-sci↗

arXiv2019

Large enhancement of the thermoelectric power factor in disordered materials through resonant scattering

In the search for more efficient thermoelectric materials, scientists have placed high hopes in the possibility of enhancing the power factor using resonant states. In this study, we investigate theoretically the effects of randomly distributed resonant impurities on the power factor. Using the Chebyshev Polynomial Green's Function method, we compute the electron transport properties for very large systems (10 million atoms) with an exact treatment of disorder. The introduction of resonant defects can lead to a large enhancement of the power factor together with a sign inversion in the Seebeck coefficient. This boost depends crucially on the position of the resonant peak, and on the interplay between elastic impurity scattering and inelastic processes. Strong electron-phonon or electron-electron scattering are found detrimental. Finally, the robustness of our results is examined in the case of anisotropic orbitals and two-dimensional confinement. Our findings are promising for the prospect of thermoelectric power generation.

cond-mat.mtrl-sci↗

arXiv2017

Boosting the power factor with resonant states: a model study

A particularly promising pathway to enhance the efficiency of thermoelectric materials lies in the use of resonant states, as suggested by experimentalists and theorists alike. In this paper, we go over the mechanisms used in the literature to explain how resonant levels affect the thermoelectric properties, and we suggest that the effects of hybridization are crucial yet ill-understood. In order to get a good grasp of the physical picture and to draw guidelines for thermoelectric enhancement, we use a tight-binding model containing a conduction band hybridized with a flat band. We find that the conductivity is suppressed in a wide energy range near the resonance, but that the Seebeck coefficient can be boosted for strong enough hybridization, thus allowing for a significant increase of the power factor. The Seebeck coefficient can also display a sign change as the Fermi level crosses the resonance. Our results suggest that in order to boost the power factor, the hybridization strength must not be too low, the resonant level must not be too close to the conduction (or valence) band edge, and the Fermi level must be located around, but not inside, the resonant peak.

cond-mat.mtrl-sci↗