arXiv subjects

Christophe Lefèvre

Publications and source records attributed to Christophe Lefèvre.

3 recordsLinked to original sources

arXiv2026

Strain-driven magnetic anisotropy and spin reorientation in epitaxial Co V 2 O 4 spinel oxide thin films

CoV___O___ (CVO) stands out among spinel vanadates for its ultra-short V-V distances, placing it at the brink of itinerant electron behaviour-an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing high-quality epitaxial CVO thin films on SrTiO___ (001) and MgO (001), inducing compressive and tensile strain, respectively. Using pulsed laser deposition under ultra-low oxygen pressure, we achieve high crystalline quality and straincontrolled tetragonal distortions: c > a under compression (STO) and c < a under tension (MgO). Resonant elastic X-ray scattering confirms a normal spinel structure, with cobalt occupying tetrahedral sites and vanadium octahedral ones. Both strain types reduce charge transport, driving the system into a highly resistive state. Magnetic measurements reveal strain-driven anisotropy switching: STO films transition from out-of-plane to in-plane easy axis below 90 K, while MgO films flip from in-plane to out-of-plane below 45 K. These results highlight CVO's exceptional responsiveness to lattice strain, unlocking a path to finely tunable electronic and magnetic properties. With its strong spin-lattice coupling and potential in spin Hall magnetoresistance, strained CVO emerges as a compelling platform for next-generation lowpower spintronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Unveiling Unconventional Ferroelectric Switching in Multiferroic Ga0.6 Fe1.4O3 Thin Films Through Multiscale Electron Microscopy Investigations

Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for ferroelectricity in most of the usual displacive ferroelectric materials is too energy-demanding for some newly diagnosed ferroelectric materials such as the Ga2-xFexO3 (0.8 < x < 1.4) compounds. Some alternative theoretical propositions have been made and need experimental confirmation. A dual-scale electron microscopy study is performed on thin films of the Ga0.6Fe1.4O3 multiferroic compound. A wide scale precession-assisted electron diffraction tomography study first allows the determination of the structure the compound adopts in thin films, and even permits the refinement of the atomic positions within this structure. Cationic mobility is suggested for two of the atomic positions through the existence of extra electronic density. A local in situ high resolution scanning transmission electron microscopy study then allows confirming these mobilities by directly spotting the cationic displacements on successively acquired images. The whole study confirms an unconventional switching mechanism via local domain wall motion in this compound.

cond-mat.mtrl-sci↗

arXiv2021

Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers

The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response to this issue, by granting the manipulation of the FM magnetization by the NM spin Hall effect (SHE) generated spin current. Additional functionalities, such as the electric field control of the spin current generation, can be offered using multifunctional ferromagnets. We have studied the spin current transfer processes between Pt and the multifunctional magnetoelectric Ga0.6Fe1.4O3 (GFO). In particular, via angular dependent magnetotransport measurements, we were able to differentiate between magnetic proximity effect (MPE)-induced anisotropic magnetoresistance (AMR) and spin Hall magnetoresistance (SMR). Our analysis shows that SMR is the dominant phenomenon at all temperatures and is the only one to be considered near room temperature, with a magnitude comparable to those observed in Pd/YIG or Pt/YIG heterostructures. These results indicate that magnetoelectric GFO thin films show promises for achieving an electric-field control of the spin current generation in NM/FM oxide-based heterostructures.

cond-mat.mtrl-sci↗