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Christopher L. Hinkle

Publications and source records attributed to Christopher L. Hinkle.

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Predicting and Accelerating Nanomaterials Synthesis Using Machine Learning Featurization

Materials synthesis optimization is constrained by serial feedback processes that rely on manual tools and intuition across multiple siloed modes of characterization. We automate and generalize feature extraction of reflection high-energy electron diffraction (RHEED) data with machine learning to establish quantitatively predictive relationships in small sets (\~10) of expert-labeled data, saving significant time on subsequently grown samples. These predictive relationships are evaluated in a representative material system (\ce{W_{1-x}V_xSe2} on c-plane sapphire (0001)) with two aims: 1) predicting grain alignment of the deposited film using pre-growth substrate data, and 2) estimating vanadium dopant concentration using in-situ RHEED as a proxy for ex-situ methods (e.g. x-ray photoelectron spectroscopy). Both tasks are accomplished using the same materials-agnostic features, avoiding specific system retraining and leading to a potential 80\% time saving over a 100-sample synthesis campaign. These predictions provide guidance to avoid doomed trials, reduce follow-on characterization, and improve control resolution for materials synthesis.

cond-mat.mtrl-sci

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated.

cond-mat.mtrl-sci