SearcharxivSearch

arXiv subjects

Christopher Rouleau

Publications and source records attributed to Christopher Rouleau.

7 recordsLinked to original sources

Active Learning for Tractable and Reproducible Pulsed Laser Deposition

This paper shows how data-driven machine learning approaches can improve growth control, reproducibility, and physical insight in the pulsed laser deposition (PLD) growth of correlated oxides. Despite well-known relationships between growth conditions and material properties, consistently producing high-quality films of complex materials like LaVO$_3$ remains difficult due to the highly non-equilibrium nature of PLD and the defects and competing phases that accumulate during growth. Here, we use an active learning framework based on Gaussian process Bayesian optimization that incorporates measured bulk and surface lattice properties along with impurity phase information to efficiently map the multidimensional growth space of LaVO$_3$ by PLD. By tuning the relative weighting of these properties, the model identifies an optimized region where phase-pure films of LaVO$_3$ exhibit two-dimensional surfaces, near-ideal lattice parameters, and minimal sub-band gap optical absorption. The trained model reveals clear competition among different defect formation mechanisms that are connected to unseen parameters like supersaturation and surface mobility, thus giving insight into the highly non-equilibrium process of PLD growth. Together, this demonstrates that property-guided machine learning can accelerate materials optimization while providing a new way to address fundamental growth mechanisms in PLD that enable understanding and utilization of quantum phenomena found in complex oxides.

cond-mat.mtrl-sci

Quantum Coherence of Rare-Earth Ions in Heterogeneous Photonic Interfaces

Harnessing rare-earth ions in oxides for quantum networks requires integration with bright emitters in III-V semiconductors, but local disorder and interfacial noise limit their optical coherence. Here, we investigate the microscopic origins of the ensemble spectrum in Er$^{3+}$:TiO$_2$ epitaxial thin films on GaAs and GaSb substrates. Ab initio calculations combined with noise-Hamiltonian modeling and Monte Carlo simulations quantify the effects of interfacial and bulk spin noise and local strain on erbium crystal-field energies and inhomogeneous linewidths. Photoluminescence excitation spectroscopy reveals that Er$^{3+}$ ions positioned at increasing distances from the III-V/oxide interface produce a systematic blue shift of the $Y_1\rightarrow Z_1$ transition, consistent with strain relaxation predicted by theory. Thermal annealing produces a compensating redshift and linewidth narrowing, isolating the roles of oxygen-vacancy and gallium-diffusion noise. These results provide microscopic insight into disorder-driven decoherence, offering pathways for precise control of hybrid quantum systems for scalable quantum technologies.

quant-ph

Controlled growth of rare-earth-doped TiO$_{2}$ thin films on III-V semiconductors for hybrid quantum photonic interfaces

Quantum photonic networks require two distinct functionalities: bright single-photon sources and long-lived quantum memories. III-V semiconductor quantum dots excel as deterministic and coherent photon emitters, while rare-earth ions such as erbium (Er$^{3+}$) in crystalline oxides offer exceptional spin and optical coherence at telecom wavelengths. Combining these systems and their functionalities via direct epitaxy is challenging due to lattice mismatch and incompatible growth conditions. Here we demonstrate low-temperature pulsed laser deposition of Er$^{3+}$-doped TiO$_{2}$ thin films directly on GaAs and GaSb substrates. Controlled surface preparation with an arsenic cap and an oxygen-deficient buffer layer enables the growth of epitaxial anatase TiO$_{2}$ (001) at 390$^{o}$C with sub-300 pm surface roughness, while avoiding interface degradation. In contrast, high-temperature oxide desorption or growth temperatures drive the transition to rough, polycrystalline rutile film, as confirmed by transmission electron microscopy. Minimal coincident interface area (MCIA) modeling explains the orientation-selective growth on GaAs and GaSb. Raman and cryogenic photoluminescence excitation spectroscopy verify the crystal phase and optical activation of Er$^{3+}$ ions. This multi-parameter growth strategy helps preserve III-V quantum dot functionality and yields smooth surfaces suitable for low-loss nanophotonic structures. Our results establish a materials platform for monolithically integrating rare-earth quantum memories with semiconductor photon sources, paving the way toward scalable hybrid quantum photonic chips.

quant-ph

Evolution of surface morphology from Stranski Krastanov growth mode to step flow growth mode in InSbBi thin films

The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its small bandgap (<0.17 eV). Furthermore, InSbBi could serve as a valuable platform for spin dynamics and quantum phenomena due to its strong spin-orbit coupling. Despite its potential, the material quality of InSbBi alloys lags behind that of conventional III V semiconductors, primarily due to the substantial challenges associated with incorporating Bi into InSb and producing high-quality InSbBi with varying Bi compositions. In this study, we address these issues by developing a method for growing smooth InSbBi thin films with tunable Bi incorporation up to 1.81% by the dynamic adjustment of Sb flux and careful control of the interplay between growth temperature and Bi flux using molecular beam epitaxy. This work paves the path for high-quality InSbBi thin films for applications in photodetection, spintronics, and quantum technology.

cond-mat.mtrl-sci

Room-temperature insulating ferromagnetic (Ni,Co)1+2xTi1-xO3 thin films

Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial $A^{1+2x}$Ti$^{4+}$$_{1-x}$O$_3$ (ATO), $A=$Ni$^{2+}$,Co$^{2+}$ and $0.6<x \leq 1$, thin films are electrically insulating ferromagnets already at room-temperature. The octahedra network of the ATO and ilmenite structures are similar yet different octahedra-filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to $x=1$, or vacated $(-0.24<x<0)$ in the ATO structure. TiO-layers, which separate the ferromagnetic (Ni,Co)O-layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO$_3$ and CoTiO$_3$ ilmenites, can continuously be replaced by (Ni,Co)O-layers to convert the ATO-films to ferromagnetic insulator with abundant direct cation interactions.

cond-mat.mtrl-sci

In Quest of a Ferromagnetic Insulator -- Structure Controlled Magnetism in Mg-Ti-O Thin Films

Ferromagnetic insulator thin films can convey information by spin waves, avoiding charge displacement and Eddy current losses. The sparsity of high-temperature insulating ferromagnetic materials hinders the development of spin wave based devices. Stoichiometric magnesium titanate, MgTiO$_3$, has an electronic-energy-band structure in which all bands are either full or empty, being a paramagnetic insulator. The MgTiO$_3$ ilmenite consists of ordered octahedra and cation network in which one third of the octahedra are vacant, one third host magnesium and one third titanium. By giving up these characteristics, a rich variety of different magnetic structures can be formed. Our experiments and electronic-energy-band-structure computations show that the magnetic and electric properties of Mg-Ti-O films can drastically be changed and controlled by Mg- and Ti-cation arrangement and abundancy in the octahedra. Insulating titanium- and semiconducting magnesium-rich films were ferromagnetic up to elevated temperatures. The presence and origin of ferromagnetic insulating phase in the films is not apparent - the expectation, based on the well-established rules set by Goodenough and Kanamori, is paramagnetic or antiferromagnetic ordering. We show that ferro- and paramagnetic phases, possessing the same stoichiometry, can be obtained by merely rearranging the cations, thus allowing defect-free interfaces in multilayer structures.

cond-mat.mtrl-sci

Nickel-cobalt-titanate thin films - new sustainable magnetic oxides

Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25 0) or emptying filled (x<0) octahedra. When x = 1 all octahedra are filled. Two factors controlling the magnetism and crystal distortion are identified. First is a direct overlap between the adjacent cation d-orbitals resulting in a bond formation and magnetic interactions between the cations. This is most clearly revealed as a crystal distortion in the x approximately 0 compositions with approximately equal amounts of Ni and Co: the distortion of the x approximately 0 compound is a function of Ni/Co ratio. The second factor is x, which controls the cation shift towards a vacant octahedron. The displacement decreases and the symmetry increases with decreasing Ti content as was revealed by x-ray diffraction and Raman spectroscopy. When all octahedra are filled the cations prefer octahedron center positions. Also the number density of cations has increased by a factor of 50 percent when compared to the ilmenite structure. The number density ratios of Ni/Co cations between x=1 and x=0 compounds is 3. The Raman and x-ray diffraction data collected on samples with x = 1 or close to 1 are interpreted in terms of P63/mmc space group.

cond-mat.mtrl-sci