arXiv subjects

Chuan Qin

Publications and source records attributed to Chuan Qin.

62 records · Page 4Linked to original sources

arXiv2017

Anisotropic Spin Relaxation Induced by Surface Spin-Orbit Effects

It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate plane, the spin-relaxation length is longer for spins parallel to the Cu channel than for spins perpendicular to it, by as much as 9% at 10 K. Spin-orbit effects on the surfaces of Cu channels can account for this anisotropic spin relaxation. The finding suggests novel tunability of spin current, not only by its polarization direction but also by electrostatic gating.

cond-mat.mes-hall↗

arXiv2016

The Design and Implementation of a Rekeying-aware Encrypted Deduplication Storage System

Rekeying refers to an operation of replacing an existing key with a new key for encryption. It renews security protection, so as to protect against key compromise and enable dynamic access control in cryptographic storage. However, it is non-trivial to realize efficient rekeying in encrypted deduplication storage systems, which use deterministic content-derived encryption keys to allow deduplication on ciphertexts. We design and implement REED, a rekeying-aware encrypted deduplication storage system. REED builds on a deterministic version of all-or-nothing transform (AONT), such that it enables secure and lightweight rekeying, while preserving the deduplication capability. We propose two REED encryption schemes that trade between performance and security, and extend REED for dynamic access control. We implement a REED prototype with various performance optimization techniques and demonstrate how we can exploit similarity to mitigate key generation overhead. Our trace-driven testbed evaluation shows that our REED prototype maintains high performance and storage efficiency.

cs.DC↗

arXiv2016

Spin Hall effects in mesoscopic Pt films with high resistivity

The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 μΩ*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in-situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: λ_pt<0.8 nm. The average product of λ_pt and the Pt spin Hall angle α_H is substantial: α_H*λ_pt=(0.142 +/- 0.040)nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.

cond-mat.mes-hall↗

arXiv2015

CDStore: Toward Reliable, Secure, and Cost-Efficient Cloud Storage via Convergent Dispersal

We present CDStore, which disperses users' backup data across multiple clouds and provides a unified multi-cloud storage solution with reliability, security, and cost-efficiency guarantees. CDStore builds on an augmented secret sharing scheme called convergent dispersal, which supports deduplication by using deterministic content-derived hashes as inputs to secret sharing. We present the design of CDStore, and in particular, describe how it combines convergent dispersal with two-stage deduplication to achieve both bandwidth and storage savings and be robust against side-channel attacks. We evaluate the performance of our CDStore prototype using real-world workloads on LAN and commercial cloud testbeds. Our cost analysis also demonstrates that CDStore achieves a monetary cost saving of 70% over a baseline cloud storage solution using state-of-the-art secret sharing.

cs.CR↗

arXiv2014

Improved bounds for the mixing time of the random-to-random insertion shuffle

We prove an upper bound of $1.5324 n \log n$ for the mixing time of the random-to-random insertion shuffle, improving on the best known upper bound of $2 n \log n$. Our proof is based on the analysis of a non-Markovian coupling.

math.PR↗

arXiv2014

(Sr3La2O5)(Zn1-xMnx)2As2: A Bulk Form Diluted Magnetic Semiconductor isostructural to the "32522" Fe-based Superconductors

A new diluted magnetic semiconductor system, (Sr3La2O5)(Zn1-xMnx)2As2, has been synthesized and characterized. 10% Mn substitution for Zn in bulk form (Sr3La2O5)Zn2As2 results in a ferromagnetic ordering below Curie temperature, TC ~ 40 K. (Sr3La2O5)(Zn1-xMnx)2As2 has a layered crystal structure identical to that of 32522-type Fe based superconductors, and represents the fifth DMS family that has a direct counterpart among the FeAs high temperature superconductor families.

cond-mat.str-el↗

arXiv2013

NMR Investigation of the Diluted Magnetic Semiconductor Li(Zn1-xMnx)P (x = 0.1)

We employ NMR techniques to investigate the nature of Mn spins in the I-II-V diluted magnetic semiconductor Li(Zn1-xMnx)P (x = 0.1, Curie temperature Tc = 25 K). We successfully identify the 7Li NMR signals arising from the Li sites adjacent to Mn2+, and probe the static and dynamic properties of Mn spins. From the NMR spin-lattice relaxation data, we show that the Mn spin-spin interactions extend over many unit cells.

cond-mat.str-el↗

arXiv2013

(La1-xBax)(Zn1-xMnx)AsO: A Two Dimensional "1111" Diluted Magnetic Semiconductor in Bulk Form

We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 <= x <= 0.2) with a layered crystal structure identical to that of the "1111" FeAs superconductors. No ferromagnetic order occurs for (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) sub- stitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ~40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in the entire volume, with the relationship between the internal field and TC consistent with the trend found in (Ga,Mn)As, the "111" Li(Zn,Mn)As, and the "122" (Ba,K)(Zn,Mn)2As2 systems.

cond-mat.str-el↗