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Chuan Seng Tan

Publications and source records attributed to Chuan Seng Tan.

11 recordsLinked to original sources
arXiv2026

Machine Learning-Driven Design of Mixed-Pitch Grating Couplers for Co-Packaged Optics Applications

A mixed-pitch grating coupler which can couple a wide range of wavelengths is preferred in its application in co-packaged optics (CPO). However, the design and optimization of such grating coupler is complex. In this work, we developed software with integrated deep neural network (DNN) model to automatically design the mixed-pitch grating coupler from user-specified peak wavelengths and full-width half-maximum (FWHM) values. We first trained the DNN model with 10,000 rows of grating parameters-power spectrum datasets, where the power spectrum was simulated using finite-difference time domain (FDTD) technique. Upon training, we tested the model using ~1,000 different combinations of peak wavelengths and FWHM values. Among the combinations, 822 attempts have <15% error, while 351 attempts have <5% error when comparing the user-specified and FDTD-verified spectrum. Meanwhile, comparing the user-specified and FDTD-verified peak wavelengths, 844 attempts have peak wavelengths with absolute error (AE) < 2 nm. For FWHMs, 738 attempts have FWHM values with AE < 10 nm. We have also developed a graphical-user interface (GUI) to ease the usage of this software.

physics.optics↗
arXiv2025

AI-Designed Photonics Gratings with Experimental Verification

Artificial Intelligence (AI) software based on transformer model is developed to automatically design gratings for possible integrations in ion traps to perform optical addressing on ions. From the user-defined (x,z) coordinates and full-width half-maximum (FWHM) values, the AI software can automatically generate the Graphic Design System (GDS) layout of the grating that shoots light towards the pre-defined (x,z) coordinates with built-in finite-difference time-domain (FDTD) simulation for performance verification. Based on the FDTD verification, AI-design gratings produced grating-to-free-space light that shoots towards the provided (x,z) target with < 2 micron deviations. For most attempts, the FWHM of FDTD simulation has < 2 micron deviations from the user-defined FWHM. The AI-designed gratings were successfully taped out and capable of producing output light for possible optical addressing of trapped ions.

physics.optics↗
arXiv2024

Real-time Detection and Auto focusing of Beam Profiles from Silicon Photonics Gratings using YOLO model

When observing the chip-to-free-space light beams from silicon photonics (SiPh) to free-space, manual adjustment of camera lens is often required to obtain a focused image of the light beams. In this letter, we demonstrated an auto-focusing system based on you-only-look-once (YOLO) model. The trained YOLO model exhibits high classification accuracy of 99.7% and high confidence level >0.95 when detecting light beams from SiPh gratings. A video demonstration of real-time light beam detection, real-time computation of beam width, and auto focusing of light beams are also included.

eess.IV↗
arXiv2024

Recognizing Beam Profiles from Silicon Photonics Gratings using Transformer Model

Over the past decade, there has been extensive work in developing integrated silicon photonics (SiPh) gratings for the optical addressing of trapped ion qubits in the ion trap quantum computing community. However, when viewing beam profiles from infrared (IR) cameras, it is often difficult to determine the corresponding heights where the beam profiles are located. In this work, we developed transformer models to recognize the corresponding height categories of beam profiles of light from SiPh gratings. The model is trained using two techniques: (1) input patches, and (2) input sequence. For model trained with input patches, the model achieved recognition accuracy of 0.938. Meanwhile, model trained with input sequence shows lower accuracy of 0.895. However, when repeating the model-training 150 cycles, model trained with input patches shows inconsistent accuracy ranges between 0.445 to 0.959, while model trained with input sequence exhibit higher accuracy values between 0.789 to 0.936. The obtained outcomes can be expanded to various applications, including auto-focusing of light beam and auto-adjustment of z-axis stage to acquire desired beam profiles.

physics.optics↗
arXiv2021

1D photonic crystal direct bandgap GeSn-on-insulator laser

GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 $μm^2$ and a compact active area of ~1.2 $μm^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ~18.2 kW cm$^{ -2}$ at 4 K, which is significantly lower than that of the unreleased nanobeam laser (~38.4 kW cm$^{ -2}$ at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows a quenching of the lasing at a temperature of 70 K. Our demonstration offers a new avenue towards developing practical group-IV light sources with high-density integration and low power consumption.

physics.optics↗
arXiv2019

Band structure of Ge$_{1-x}$Sn$_{x}$alloy: a full-zone 30-band $k$$\cdot$$p$ model

A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and $α$-Sn obtained with empirical tight binding and \textit{ab initio} methods. Input parameters for the 30-band $k$$\cdot$$p$ model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge$_{1-x}$Sn$_{x}$ alloy with the composition range $0<x<0.3$. The 30-band $k$$\cdot$$p$ model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge$_{1-x}$Sn$_{x}$ alloy with a large parameter space to explore.

physics.app-ph↗
arXiv2019

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies.

cond-mat.mtrl-sci↗
arXiv2017

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As doping can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

cond-mat.mtrl-sci↗
arXiv2017

Low-threshold optically pumped lasing in highly strained Ge nanowires

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits.

physics.optics↗
arXiv2016

On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias

Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expansion (CTE) mismatch-induced stress. CTE-mismatch-induced stress is shown to dominate the compressive regime of the near-surface stress distribution around Cu-filled TSV structures, while pre-existing stress dominates the full range of the stress distribution in the CNT-filled TSV structures. Once the pre-existing stress is minimized, the total stress around CNT-filled TSVs can be minimized accordingly. Therefore, compared to Cu-filled TSVs, CNT-filled TSVs hold the potential to circumvent the hassle of stress-aware circuit layout and to solve the stress-related reliability issues.

cond-mat.mtrl-sci↗