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Chuantao Zheng

Publications and source records attributed to Chuantao Zheng.

3 recordsLinked to original sources

Suspended waveguide-enhanced near-infrared photothermal spectroscopy for ppb-level molecular gas sensing on a chalcogenide chip

On-chip waveguide sensors have attracted significant attention recently due to their potential for high level integration. However, so far on-chip gas sensing based on traditional laser absorption spectroscopy has demonstrated low detection sensitivity, due to weak light-gas interaction over a limited interaction distance. On-chip photothermal spectroscopy (PTS) appears to be a powerful technique to achieve higher sensitivity, its performance is yet constrained to parts-per-million (ppm)-level due to small fraction of evanescent field in the light-gas interaction zone and fast thermal dissipation through the solid substrate. Herein, we demonstrated suspended chalcogenide glass waveguide (ChGW)-enhanced PTS that overcomes these limitations, enabling highly sensitive parts-per-billion (ppb)-level molecular gas sensing. We fabricated a nanoscale suspended ChGW with low loss of 2.6 dB/cm using CMOS-compatible two-step patterning process. By establishing an equivalent PTS model to guide the optimization of the ChGW geometry, we achieved a 4-fold increase in the absorption-induced heat source power and a 10.6-fold decrease in the equivalent heat conductivity, resulting in a 45-fold enhancement in photothermal phase modulation efficiency over the non-suspended waveguides. Combining with a high-contrast waveguide facet-formed Fabry-Perot interferometer, we achieved an unprecedented acetylene detection limit of 330 ppb, a large dynamic range close to 6 orders of magnitude, and a fast response of less than 1 s. The overall system exhibits a noise-equivalent absorption coefficient of 3.8x10-7 cm-1, setting a new benchmark for photonic waveguide gas sensors to the best of our knowledge. This work provides a key advancement towards prototyping an integrated sensor-on-a-chip for highly sensitive and background-free photonic sensing applications.

physics.optics

Dual slow-light enhanced photothermal gas spectroscopy on a silicon chip

Integrated photonic sensors have attracted significant attention recently for their potential for high-density integration. However, they face challenges in sensing gases with high sensitivity due to weak light-gas interaction. Slow light, which dramatically intensifies light-matter interaction through spatial compression of optical energy, provides a promising solution. Herein, we demonstrate a dual slow-light scheme for enhancing the sensitivity of photothermal spectroscopy (PTS) with a suspended photonic crystal waveguide (PhCW) on a CMOS-compatible silicon platform. By tailoring the dispersion of the PhCW to generate structural slow light to enhance pump absorption and probe phase modulation, we achieve a photothermal efficiency of 3.6x10-4 rad cm ppm-1 mW-1 m-1, over 1-3 orders of magnitude higher than the strip waveguides and optical fibers. With a 1-mm-long sensing PhCW incorporated in a stabilized on-chip Mach-Zehnder interferometer with a footprint of 0.6 mm2, we demonstrate acetylene detection with a sensitivity of 1.4x10-6 in terms of noise-equivalent absorption and length product (NEAL), the best among the reported photonic waveguide gas sensors to our knowledge. The dual slow-light enhanced PTS paves the way for integrated photonic gas sensors with high sensitivity, miniaturization, and cost-effective mass production.

physics.optics

Breaking Through the Plasma Wavelength Barrier to Extend the Transparency Range of Ultrathin Indium Tin Oxide Films into the Far Infrared

Indium tin oxide (ITO) film, which is the most commonly used transparent conductive film (TCF), has traditionally been believed to be transparent in the visible spectrum but to reflect infrared (IR) light beyond the plasma wavelength ($λ_p$). However, our theoretical analysis challenges this notion by demonstrating that an ultrathin ITO TCF that is thinner than the light's penetration depth, can overcome the transmission barrier at $λ_p$. To validate the theoretical modeling, we have successfully fabricated ITO films that, despite having $λ_p \approx$ 1 $μ$m, remain transparent from 400 nm to 20 $μ$m. This represents the broadest transparency range ever reported for any In$_2$O$_3$-based TCF. The 10-nm-thick ITO TCFs have high visible transmittance (91.0% at 550 nm), low resistivity (5 $\times$ 10$^{-4}$ $Ω\cdot$ cm), and good IR transmittance (averaging 60% over 1.35 $\unicode{x2013}$ 18.35 $μ$m). Their IR transparency facilitates radiative cooling of the underlying circuitry. When an operational resistor is enclosed by commercial ITO TCFs that are 140 nm thick, its temperature increases. However, using 10-nm-thick ITO TCFs instead of the commercial ones can completely avoid this temperature rise. Moreover, attaching a silver grid to a 10-nm-thick ITO TCF can reduce the effective sheet resistance to ~10 $Ω/\square$ at the expense of only ~3% transmittance. This development paves the way for large-scale applications that require low sheet resistance and far-IR transparency.

physics.app-ph