arXiv subjects

Chuanying Xi

Publications and source records attributed to Chuanying Xi.

62 records · Page 4Linked to original sources

arXiv2018

Interface induced Zeeman-protected superconductivity in ultrathin crystalline lead films

Two dimensional (2D) superconducting systems are of great importance to exploring exotic quantum physics. Recent development of fabrication techniques stimulates the studies of high quality single crystalline 2D superconductors, where intrinsic properties give rise to unprecedented physical phenomena. Here we report the observation of Zeeman-type spin-orbit interaction protected superconductivity (Zeeman-protected superconductivity) in 4 monolayer (ML) to 6 ML crystalline Pb films grown on striped incommensurate (SIC) Pb layers on Si(111) substrates by molecular beam epitaxy (MBE). Anomalous large in-plane critical field far beyond the Pauli limit is detected, which can be attributed to the Zeeman-protected superconductivity due to the in-plane inversion symmetry breaking at the interface. Our work demonstrates that in superconducting heterostructures the interface can induce Zeeman-type spin-orbit interaction (SOI) and modulate the superconductivity.

cond-mat.supr-con↗

arXiv2017

Ising Superconductivity and Quantum Phase Transition in Macro-Size Monolayer NbSe2

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have a range of unique physics properties and could be used in the development of electronics, photonics, spintronics and quantum computing devices. The mechanical exfoliation technique of micro-size TMD flakes has attracted particular interest due to its simplicity and cost effectiveness. However, for most applications, large area and high quality films are preferred. Furthermore, when the thickness of crystalline films is down to the 2D limit (monolayer), exotic properties can be expected due to the quantum confinement and symmetry breaking. In this paper, we have successfully prepared macro-size atomically flat monolayer NbSe2 films on bilayer graphene terminated surface of 6H-SiC(0001) substrates by molecular beam epitaxy (MBE) method. The films exhibit an onset superconducting critical transition temperature above 6 K, 2 times higher than that of mechanical exfoliated NbSe2 flakes. Simultaneously, the transport measurements at high magnetic fields reveal that the parallel characteristic field Bc// is at least 4.5 times higher than the paramagnetic limiting field, consistent with Zeeman-protected Ising superconductivity mechanism. Besides, by ultralow temperature electrical transport measurements, the monolayer NbSe2 film shows the signature of quantum Griffiths singularity when approaching the zero-temperature quantum critical point.

cond-mat.supr-con↗

arXiv2017

Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2

While pyrite-type PtBi2 with face-centered cubic structure has been predicted to be a three-dimensional (3D) Dirac semimetal, experimental study on its physical properties remains absent. Here we report the angular-dependent magnetoresistance (MR) measurements of PtBi2 single-crystal under high magnetic fields. We observed extreme large unsaturated magnetoresistance (XMR) up to 11.2 million percent at T = 1.8 K in a magnetic field of 33 T, which surpasses the previously reported Dirac materials, such as WTe2, LaSb and NbP. The crystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass (SdH) quantum oscillations with nontrivial Berry's phase. Analysis of Hall resistivity indicates that the XMR can be ascribed to the nearly compensated electron and hole. Our experimental results associated with the ab initio calculations suggest that pyrite PtBi2 is a topological semimetal candidate which might provide a platform for exploring topological materials with XMR in noble metal alloys.

cond-mat.mtrl-sci↗

arXiv2017

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

In three-dimensional topological insulators (TIs), the nontrivial topology in their electronic bands casts a gapless state on their solid surfaces, using which dissipationless TI edge devices based on the quantum anomalous Hall (QAH) effect and quantum Hall (QH) effect have been demonstrated. Practical TI devices present a pair of parallel-transport topological surface states (TSSs) on their top and bottom surfaces. However, due to the no-go theorem, the two TSSs always appear as a pair and are expected to quantize synchronously. Quantized transport of a separate Dirac channel is still desirable, but has never been observed in graphene even after intense investigation over a period of 13 years, with the potential aim of half-QHE. By depositing Co atomic clusters, we achieved stepwise quantization of the top and bottom surfaces in BiSbTeSe2 (BSTS) TI devices. Renormalization group flow diagrams13, 22 (RGFDs) reveal two sets of converging points (CVPs) in the (Gxy, Gxx) space, where the top surface travels along an anomalous quantization trajectory while the bottom surface retains 1/2 e2/h. This results from delayed Landau-level (LL) hybridization (DLLH) due to coupling between Co clusters and TSS Fermions.

cond-mat.mes-hall↗

arXiv2016

Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5

Topological Dirac semimetal is a newly discovered class of materials and has attracted intense attentions. This material can be viewed as a three-dimensional (3D) analogue of graphene and has linear energy dispersion in bulk, leading to a range of exotic transport properties. Here we report direct quantum transport evidence of 3D Dirac semimetal phase of layered material ZrTe5 by angular dependent magnetoresistance measurements under high magnetic fields up to 31 Tesla. We observed very clear negative longitudinal magnetoresistance induced by chiral anomaly under the condition of the magnetic field aligned only along the current direction. Pronounced Shubnikov-de Hass (SdH) quantum oscillations in both longitudinal magnetoresistance and transverse Hall resistance were observed, revealing anisotropic light cyclotron masses and high mobility of the system. In particular, a nontrivial π-Berry phase in the SdH gives clear evidence for 3D Dirac semimetal phase. Furthermore, we observed clear Landau Level splitting under high magnetic field, suggesting possible splitting of Dirac point into Weyl points due to broken time reversal symmetry. Our results indicate that ZrTe5 is an ideal platform to study 3D massless Dirac and Weyl fermions in a layered compound.

cond-mat.mes-hall↗

arXiv2016

Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2

Several prominent transport properties have been identified as key signatures of topologicalmaterials. One is the resistivity plateau at low temperatures as observed in several topological insulators (TIs), another is the negative magnetoresistance (MR) when the applied magnetic field is parallel to the current direction as observed in several topological semimetals (TSMs) including Dirac semimetals (DSMs) and Weyl semimetals (WSMs). Usually, these two exotic phenomena emerge in distinct materials with or without time reversal symmetry (TRS), respectively. Here we report the discovery of a new member in TSMs, TaSb2, which clearly exhibits both of these phenomena in a single material. This compound crystallizes in a base-centered monoclinic, centrosymmetric structure, and is metallic with a low carrier density in the zero field. While applying magnetic field it exhibits insulating behavior before appearance of a resistivity plateau below Tc =13 K. In the plateau regime, the ultrahigh carrier mobility and extreme magnetoresistance (XMR) for the field perpendicular to the current are observed as in DSMs and WSMs, in addition to a quantum oscillation behavior with non-trivial Berry phases. In contrast to the most known DSMs and WSMs, the negative MR in TaSb2 does not saturate up to 9 T, which, together with the almost linear Hall resistivity, manifests itself an electron-hole non-compensated TMS. These findings indicate that the resistivity plateau could be a generic feature of topology-protected metallic states even in the absence of TRS and compatible with the negative MR depending on the field direction. Our experiment extends a materials basis represented by TaSb2 as a new platform for future theoretical investigations and device applications of topological materials.

cond-mat.mtrl-sci↗

arXiv2014

Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons

Understanding of the exotic quantum phenomena in bulk bismuth beyond its ultraquantum limit still remains controversial and gives rise to a renewed interest. The focus of the issues is whether these quantum properties have a conventional bulk nature or just the surface effect due to the significant spin-orbital interaction and in relation to the Bi-based topological insulators. Here, we present angular-dependent magnetoresistance (AMR) measurements on single-crystal bismuth nanoribbons of different thickness with magnetic fields up to 31 T. In thin nanoribbons with thickness of ~40 nm, a two-fold rational symmetry of the low field AMR spectra and two sets of 1/2-shifted (i.e. γ=1/2) Shubnikov-de Haas (SdH) quantum oscillations with exact two- dimensional (2D) character were obtained. However, when the thickness of the ribbon increases, a 3D bulk-like SdH oscillations with γ=0 and a four-fold rotational symmetry of the AMR spectra appear. These results unambiguously provided the first transport evidence of the topological 2D metallic surface states in thinner nanoribbons with an insulating bulk. Our observations provide a promising pathway to understand the quantum phenomena in Bi arising from the surface states.

cond-mat.mes-hall↗

arXiv2011

Single crystal growth of BaFe$_{2-x}$Co$_x$As$_2$ without fluxing agent

We report a simple, reliable method to grow high quality BaFe$_{2-x}$Co$_x$As$_2$ single crystal samples without using any fluxing agent. The starting materials for the single crystal growth come from well-crystallized polycrystalline samples and the highest growing temperature can be 1493 K. The as-grown crystals have typical dimensions of 4$\times3\times$0.5 mm$^3$ with c-axis perpendicular to the shining surface. We find that the samples have very large current carrying ability, indicating that the samples have good potential technological applications.

cond-mat.supr-con↗