arXiv subjects

Chuhan Deng

Publications and source records attributed to Chuhan Deng.

3 recordsLinked to original sources

arXiv2025

Red Emission from Strain-Relaxed Bulk InGaN Active Region

High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The growth temperature of bulk InGaN was ~800C, which is over 100C higher than the typical growth temperature of red QWs. By introducing high-density trench structures in the underlying green multi-quantum wells (MQWs), the compressive strain in bulk InGaN was relaxed by ~96%. With strain relaxation, phase separation occurred in the bulk InGaN, forming low-In-content (blue) and high-In-content (red) phases. The red phase acted as carrier localization centers, enabling red light emission under electrical injection. The red LEDs based on bulk InGaN exhibited a peak wavelength of 645 nm at 20 mA, with on-wafer peak external quantum efficiency of 0.32%. This study presents a new epitaxial strategy for red InGaN LEDs.

cond-mat.mtrl-sci↗

arXiv2024

Frequency-Resolved Forward Capacitance in GaN-based LEDs

This study establishes a unified framework for interpreting dynamic capacitive responses in InGaN-based light-emitting diodes (LEDs) through forward-bias capacitance-voltage-frequency spectroscopy. A hybrid impedance model integrating series RL components and parallel C-G networks was developed to resolve distinct frequency-dependent capacitive regimes. The low-frequency regime (<1 kHz) is governed by interfacial capacitance with characteristic reciprocal frequency dependence, while the mid-frequency range(10 kHz-6.4 MHz) demonstrates carrier diffusion and recombination dynamics. At MHz frequencies, negative capacitance manifests due to delayed carrier emission mediated by deep-level traps. The model achieved sub-1% fitting errors (R^2 > 0.99)across a broad bandwidth(10 kHz-6.4 MHz) , conclusively attributing negative capacitance to intrinsic trap processes rather than extrinsic artifacts. Critical advances include quantum well cap thickness modulation reducing mid-frequency capacitance by 30% and the dominance of trap-mediated inductance over parasitic contributions by three orders of magnitude. This framework resolves persistent controversies in LED impedance interpretation. By bridging semiconductor physics with device engineering, this methodology provides essential tools for designing next-generation optoelectronic systems requiring ultralow-latency operation and precise charge-state control.

physics.app-ph↗

arXiv2023

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films.

cond-mat.mtrl-sci↗