arXiv subjects

Chun-Wei Chen

Publications and source records attributed to Chun-Wei Chen.

28 records · Page 2Linked to original sources

arXiv2019

Mechanical analogue of a Majorana bound state

The discovery of topologically non-trivial electronic systems has opened a new age in condensed matter research. From topological insulators to topological superconductors and Weyl semimetals, it is now understood that some of the most remarkable and robust phases in electronic systems (e.g., Quantum Hall or Anomalous Quantum Hall) are the result of topological protection. These powerful ideas have recently begun to be explored also in bosonic systems. Topologically protected acoustic, mechanical, and optical edge states have been demonstrated in a number of systems that recreate the requisite topological conditions. Such states that propagate without backscattering could find important applications in communications and energy technologies. In this work we demonstrate the mechanical analogue of a topologically bound state, a different class of non-propagating protected state that cannot be destroyed by local perturbations. These are well known in electronic systems, such as Majorana bound states in topological superconductors, but remain largely unexplored in a bosonic setting. We implement topological binding by creating a Kekulé distortion vortex on a two-dimensional mechanical honeycomb superlattice.

cond-mat.mes-hall↗

arXiv2018

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that an nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by ohmic contact behavior at T=2 K and a low barrier height, Φ$_B$=50 meV. This ohmic contact enables demonstration of an ON-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3,700 and 1,000 cm$^2$/Vs is achieved with the two-terminal In-InSe FEDs at T=2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D-semiconductor-based electronics.

cond-mat.mes-hall↗

arXiv2018

Experimental demonstration of topological waveguiding in elastic plates with local resonators

It is recent that the emergence of topological insulators in condensed matter physics has inspired analogous wave phenomena in mechanical systems, mostly in the setting of discrete lattice models. Here we report a numerical and experimental demonstration of topological waveguiding in a continuum plate. We take a ubiquitous design of a bolted elastic plate and show that such a design allows us to invoke the pseudo-spin Hall effect at remarkably low frequencies. We harness the complex interaction of the bolts and the plate to show the existence of a pair of double Dirac cones near the resonant frequency of the bolt. The manipulation of bolted patterns results in the opening of multiple topological bandgaps, including a complete bandgap that forbids all plate modes. We demonstrate that inside this bandgap, the interface between two topologically distinct zones can guide flexural waves crisply around sharp bends.

cond-mat.mes-hall↗

arXiv2018

Subwavelength and directional control of flexural waves in zone-folding induced topological plates

Inspired by the quantum spin Hall effect shown by topological insulators, we propose a plate structure that can be used to demonstrate the pseudo-spin Hall effect for flexural waves. The system consists of a thin plate with periodically arranged resonators mounted on its top surface. We extend a technique based on the plane wave expansion method to identify a double Dirac cone emerging due to the zone-folding in frequency band structures. This particular design allows us to move the double Dirac cone to a lower frequency than the resonating frequency of local resonators. We then manipulate the pattern of local resonators to open subwavelength Bragg band gaps that are topologically distinct. Building on this method, we verify numerically that a waveguide at an interface between two topologically distinct resonating plate structures can be used for guiding low-frequency, spin-dependent one-way flexural waves along a desired path with bends.

cond-mat.mes-hall↗

arXiv2017

Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions

Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires inextricable fabrication processes. Alternatively, it is intriguing to explore methods to control transport properties in the circumstance of no encapsulated layer. This is very challenging because of the ubiquitous presence of adsorbents, which can lead to charged-impurity scattering sites, charge traps, and recombination centers. Here, we show that the short-circuit photocurrent originated from the built-in electric field at the MoS2 junction is surprisingly insensitive to the gaseous environment over the range from a vacuum of 1X10^(-6) Torr to ambient condition. The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous environment. The observation of environment-insensitive short-circuit photocurrent demonstrates an alternative method to design device structure for 2D-material-based optoelectronic applications.

cond-mat.mes-hall↗

arXiv2016

Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junctions

We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which greatly reduces the high mobility of intrinsic graphene. However, we show that an oxide layer only weakly perturbs the carrier transport, which enables fabrication of a high-quality graphene p-n-p junction through a one-step and resist-free method. The measured conductance-gate voltage $(G-V_G)$ curves can be well described by a metal contact model, which confirms the charge density depinning due to the oxide layer. The graphene p-n-p junction samples exhibit pronounced quantum Hall effect, a well-defined transition point of the zeroth Landau level (LL), and scaling behavior. The scaling exponent obtained from the evolution of the zeroth LL width as a function of temperature exhibits a relatively low value of $κ=0.21\pm0.01$. Moreover, we calculate the energy level for the LLs based on the distribution of plateau-plateau transition points, further validating the assignment of the LL index of the QH plateau-plateau transition.

cond-mat.mes-hall↗

arXiv2015

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors

Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future.

cond-mat.mes-hall↗

arXiv2015

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

cond-mat.mes-hall↗

arXiv2013

Biologically inspired graphene-chlorophyll phototransistors with high gain

We present prominent photoresponse of bio-inspired graphene-based phototransistors sensitized with chlorophyll molecules. The hybrid graphene-chlorophyll phototransistors exhibit a high gain of 10^6 electrons per photon and a high responsivity of 10^6 A/W, which can be attributed to the integration of high-mobility graphene and the photosensitive chlorophyll molecules. The charge transfer at interface and the photogating effect in the chlorophyll layer can account for the observed photoresponse of the hybrid devices, which is confirmed by the back-gate-tunable photocurrent as well as the thickness and time dependent studies of the photoresponse. The demonstration of the graphene-chlorophyll phototransistors with high gain envisions a viable method to employ biomaterials for graphene-based optoelectronics.

cond-mat.mtrl-sci↗

arXiv2009

Blue photoluminescence from chemically derived graphene oxide

Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other hand, solution-processable polymeric counterparts generally luminesce at longer wavelengths due to larger delocalization in the chain. Blue light emission from solution-processed materials is therefore of unique technological significance. Here we report near-UV to blue photoluminescence (PL) from solution-processed graphene oxide (GO). The characteristics of the PL and its dependence on the reduction of GO indicates that it originates from the recombination of electron-hole (e-h) pairs localized within small sp2 carbon clusters embedded within an sp3 matrix. These results suggest that a sheet of graphene provides a parent structure on which fluorescent components can be chemically engineered without losing the macroscopic structural integrity. Our findings offer a unique route towards solution-processable opto-electronics devices with graphene.

cond-mat.mtrl-sci↗