arXiv subjects

Chunwei Yao

Publications and source records attributed to Chunwei Yao.

3 recordsLinked to original sources

arXiv2026

Collective and separate metal-insulator transitions in correlated vanadium dioxide

Deciphering the complicated interplay between collective and separate behaviors lies at the heart of first-order metal-insulator transition (MIT) in correlated electron systems, enabling the rational design of exotic electronic states and functionalities. The critical balance between collective and separate behaviors defines a fundamental collective length scale, typically shorter than 5 nm, that governs emergent quantum orders, yet active control over this dichotomy remains elusive. Here, we realize on-demand manipulation of the collective and separate MIT within the correlated VO2 system in a reversible fashion. Artificially designing the oxygen deficiency in VO2/VO2-x homojunction fosters a collective MIT with an extended collective length scale, whereas the introduction of a TiO2 interlayer drives a crossover from this collective to a two-step separate MIT via decoupling of the electronic order parameter. Incorporating mobile hydrogens into the VO2/TiO2/VO2-x trilayer enables reversible control over electronic phase modulations, transitioning a two-step MIT towards either a one-step MIT or collective electron localization. This ionic control over the electronic band structure of VO2 flexibly triggers multi-state MIT, a process governed by hydrogen-related band filling. Our findings transform the collective length scale from a passive threshold into a dynamic design parameter, establishing a viable handle for engineering collective and separate MIT for adaptive correlated electronics.

cond-mat.str-el↗

arXiv2025

Silicon-Compatible Ionic Control over Multi-State Magnetoelectric Phase Transformations in Correlated Oxide System

Realizing room-temperature ferromagnetic insulators, critical enablers for low-power spintronics, is fundamentally challenged by the long-standing trade-off between ferromagnetic ordering and indirect exchange interactions in insulators. Ionic evolution offers tempting opportunities for accessing exotic magnetoelectric states and physical functionality beyond conventional doping paradigm via tailoring the charge-lattice-orbital-spin interactions. Here, we showcase the precise magneto-ionic control over magnetoelectric states in LSMO system, delicately delivering silicon-compatible weakly ferromagnetic insulator state above room temperature. Of particular note is the decoupling of ion-charge-spin interplay in correlated LSMO system, a primary obstacle in clarifying underlying physical origin, with this process concurrently giving rise to an emergent intermediate state characterized by a weakly ferromagnetic half-metallic state. Benefiting from the SrTiO3 buffer layer as epitaxial template to promote interfacial heterogeneous nucleation, hydrogenation enables diverse magnetoelectric states in LSMO integrated on silicon, fully compatible with traditional semiconductor processing. Assisted by theoretical calculations and spectroscopic techniques, hydrogen-induced magnetoelectric transitions in LSMO are driven by band-filling control and suppression in double exchange interaction. Our work not only defines a novel design paradigm for exploring exotic quantum states in correlated system, with transformative potential for spintronics, but also fundamentally unveils the physical origin behind ionic evolution via disentangling the ion-charge-spin coupling.

cond-mat.mtrl-sci↗

arXiv2025

Manipulating the hydrogen-induced insulator-metal transition through artificial microstructure engineering

Hydrogen-associated filling-controlled Mottronics within electron-correlated system provides a groundbreaking paradigm to explore exotic physical functionality and phenomena. Dynamically controlling hydrogen-induced phase transitions through external fields offers a promising route for designing protonic devices in multidisciplinary fields, but faces high-speed bottlenecks owing to slow bulk diffusion of hydrogens. Here, we present a promising pathway to kinetically expedite hydrogen-related Mott transition in correlated VO2 system by taking advantage of artificial microstructure design. Typically, inclined domain boundary configuration and cR-faceted preferential orientation simultaneously realized in VO2/Al2O3 (102) heterostructure significantly lower the diffusion barrier via creating an unobstructed conduit for hydrogen diffusion. As a result, the achievable switching speed through hydrogenation outperforms that of counterpart grown on widely-reported c-plane Al2O3 substrate by 2-3 times, with resistive switching concurrently improved by an order of magnitude. Of particular interest, an anomalous uphill hydrogen diffusion observed for VO2 with a highway for hydrogen diffusion fundamentally deviates from basic Fick's law, unveiling a deterministic role of hydrogen spatial distribution in tailoring electronic state evolution. The present work not only provides a versatile strategy for manipulating ionic evolution, endowing with great potential in designing high-speed protonic devices, but also deepens the understanding of hydrogen-induced Mott transitions in electron-correlated system.

cond-mat.str-el↗