arXiv subjects

Chunyao Niu

Publications and source records attributed to Chunyao Niu.

5 recordsLinked to original sources

arXiv2021

Surface Van Hove Singularity Enabled Efficient Catalysis: The Cases of CO Oxidation and Hydrogen Evolution Reactions

Surface Van Hove singularity (SVHS), defined as the surface states near the Fermi level (EF) in low-dimensional systems, triggers exciting physical phenomena distinct from bulk. We herein explore theoretically the potential role of SVHS in catalysis taking CO oxidation reaction as prototype over graphene/Ca2N (Gra/Ca2N) heterojunction and Pt2HgSe3 (001) surface. It is demonstrated that both systems with SVHS could serve as an electron bath to promote O2 adsorption and subsequent CO oxidation with low energy barriers of 0.2 ~ 0.6 eV for Gra/Ca2N and Pt2HgSe3 (001) surface. Importantly, the catalytically active sites associated with SVHS are well-defined and uniformly distributed over the whole surface plane, which is superior to the commonly adopted defect or doping strategy, and further the chemical reactivity of SVHS also can be tuned easily via adjusting its position with respect to EF. Our study demonstrates the enabling power of SVHS, and provides novel physical insights into the promising potential role of VHS in designing high-efficiency catalysts.

cond-mat.mtrl-sci↗

arXiv2019

Direct comparison of many-body methods for realistic electronic Hamiltonians

A large collaboration carefully benchmarks 20 first principles many-body electronic structure methods on a test set of 7 transition metal atoms, and their ions and monoxides. Good agreement is attained between the 3 systematically converged methods, resulting in experiment-free reference values. These reference values are used to assess the accuracy of modern emerging and scalable approaches to the many-electron problem. The most accurate methods obtain energies indistinguishable from experimental results, with the agreement mainly limited by the experimental uncertainties. Comparison between methods enables a unique perspective on calculations of many-body systems of electrons.

cond-mat.mtrl-sci↗

arXiv2019

The Ratio Law of the Structure Evolution and Stability for Ti$_n$O$_m$ ($n=3$-$18$, $m=1$-$2n$) Clusters

Most theoretical investigations about titanium oxide clusters focus on (TiO$_2$)$_n$. However, many Ti$_n$O$_m$ clusters with $m\neq 2n$ are produced experimentally. In this work, first-principles calculations are performed to probe the evolution of Ti$_n$O$_m$ clusters. Our investigations show that for $n=3$-$11$, there exist one relatively stable specie; while for $n=12$-$18$, there are two relatively stable species: Ti-rich and O-rich species. HOMO-LOMO calculations show that the gap can be tuned by changing the size and configurations of Ti$_n$O$_m$ clusters. Our investigation provides insights into the evolution of cluster-to-bulk process in titanium oxide.

physics.atm-clus↗

arXiv2019

Band gap and band alignment prediction of nitride based semiconductors using machine learning

Nitride has been drawing much attention due to its wide range of applications in optoelectronics and remains plenty of room for materials design and discovery. Here, a large set of nitrides have been designed, with their band gap and alignment being studied by first-principles calculations combined with machine learning. Band gap and band offset against wurtzite GaN accurately calculated by the combination of screened hybrid functional of HSE and DFT-PBE were used to train and test machine learning models. After comparison among different techniques of machine learning, when elemental properties are taken as features, support vector regression (SVR) with radial kernel performs best for predicting both band gap and band offset with prediction root mean square error (RMSE) of 0.298 eV and 0.183 eV, respectively. The former is within HSE calculation uncertainty and the latter is small enough to provide reliable predictions. Additionally, when band gap calculated by DFT-PBE was added into the feature space, band gap prediction RMSE decreases to 0.099 eV. Through a feature engineering algorithm, elemental feature space based band gap prediction RMSE further drops by around 0.005 eV and the relative importance of elemental properties for band gap prediction was revealed. Finally, band gap and band offset of all designed nitrides were predicted and two trends were noticed that as the number of cation types increases, band gap tends to narrow down while band offset tends to go up. The predicted results will be a useful guidance for precise investigation on nitride engineering.

cond-mat.mtrl-sci↗

arXiv2017

Density-functional calculations of multivalency-driven formation of Te-based monolayer materials with superior electronic and optical properties

Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here wepredict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS2-like ( α-Te), and metastable tetragonal (\b{eta}-Te) and 2H-MoS2-like (γ-Te) structures. The underlying formation mechanism of such tri-layer arrangements is uniquely rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductor-like (e.g.,S). In particular, the α-Te phase can be spontaneously obtained from the magic thicknesses truncated along the [001] direction of the trigonal structure of bulk Te. Furthermore, both the α- and \b{eta}-Te phases possess electron and hole mobilities much higher than MoS2, as well as salient optical absorption properties. These findings effectively extend the realm of 2D materials to group-VI monolayers, and provide a new and generic formation mechanism for designing 2D materials.

cond-mat.mes-hall↗